FR1317754A - - Google Patents

Info

Publication number
FR1317754A
FR1317754A FR1317754DA FR1317754A FR 1317754 A FR1317754 A FR 1317754A FR 1317754D A FR1317754D A FR 1317754DA FR 1317754 A FR1317754 A FR 1317754A
Authority
FR
France
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Publication date
Application granted granted Critical
Publication of FR1317754A publication Critical patent/FR1317754A/fr
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/70—Bipolar devices
    • H01L29/74—Thyristor-type devices, e.g. having four-zone regenerative action
    • H01L29/744—Gate-turn-off devices
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H01L29/08—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
    • H01L29/083—Anode or cathode regions of thyristors or gated bipolar-mode devices
    • H01L29/0839—Cathode regions of thyristors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
    • H01L29/417—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions carrying the current to be rectified, amplified or switched
    • H01L29/41716—Cathode or anode electrodes for thyristors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/49—Structure, shape, material or disposition of the wire connectors after the connecting process of a plurality of wire connectors
    • H01L2224/491—Disposition
    • H01L2224/4918—Disposition being disposed on at least two different sides of the body, e.g. dual array
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/30—Technical effects
    • H01L2924/301—Electrical effects
    • H01L2924/3011—Impedance

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Ceramic Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Thyristors (AREA)
  • Die Bonding (AREA)
  • Electron Sources, Ion Sources (AREA)
FR1317754D 1961-03-17 Expired FR1317754A (fr)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
GB985261A GB935710A (en) 1961-03-17 1961-03-17 Improvements in controlled semiconductor rectifiers
GB54164A GB987169A (en) 1961-03-17 1964-01-06 Improvements relating to semi-conductor controlled rectifiers

Publications (1)

Publication Number Publication Date
FR1317754A true FR1317754A (fr) 1963-05-08

Family

ID=26236007

Family Applications (1)

Application Number Title Priority Date Filing Date
FR1317754D Expired FR1317754A (fr) 1961-03-17

Country Status (3)

Country Link
DE (1) DE1209207B (fr)
FR (1) FR1317754A (fr)
GB (2) GB935710A (fr)

Families Citing this family (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE1289195B (de) * 1964-06-23 1969-02-13 Itt Ind Gmbh Deutsche Flaechentransistor mit einer eingelassenen Basiszone
DE1297239C2 (de) * 1964-11-11 1975-07-17 Deutsche Itt Industries Gmbh, 7800 Freiburg Leistungstransistor
DE1281036B (de) * 1965-07-31 1968-10-24 Telefunken Patent Transistor und Verfahren zu seiner Herstellung
US3577046A (en) * 1969-03-21 1971-05-04 Gen Electric Monolithic compound thyristor with a pilot portion having a metallic electrode with finger portions formed thereon
US3579060A (en) * 1969-03-21 1971-05-18 Gen Electric Thyristor with improved current and voltage handling characteristics
US3609476A (en) * 1970-06-26 1971-09-28 Gen Electric Interdigitated structures for gate turnoff thyristors and for transistors
US3964090A (en) * 1971-12-24 1976-06-15 Semikron Gesellschaft Fur Gleichrichterbau Und Elektronid M.B.H. Semiconductor controlled rectifier
US4079409A (en) * 1973-11-27 1978-03-14 Licentia Patent-Verwaltungs G.M.B.H. Thyristor with pressure contacting
JPS5138879A (fr) * 1974-09-27 1976-03-31 Hitachi Ltd
DE2902224A1 (de) * 1979-01-20 1980-07-24 Bbc Brown Boveri & Cie Kontaktsystem fuer leistungs-halbleiterbauelemente
JPH0214777B2 (fr) * 1979-07-04 1990-04-10 Uesuchinguhausu Bureiku Ando Shigunaru Co Ltd
US4460913A (en) * 1981-10-30 1984-07-17 Rca Corporation Fast switching transistor
DE3230760A1 (de) * 1982-08-18 1984-02-23 Siemens AG, 1000 Berlin und 8000 München Abschaltbarer thyristor
US4584595A (en) * 1985-02-07 1986-04-22 Reliance Electric Company Arrangement of field effect transistors for operation in the switched mode at high frequency

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2989426A (en) * 1957-06-06 1961-06-20 Ibm Method of transistor manufacture
DE1132247B (de) * 1959-01-30 1962-06-28 Siemens Ag Gesteuerte Vierschichtentriode mit vier Halbleiterschichten abwechselnden Leitfaehigkeitstyps

Also Published As

Publication number Publication date
GB987169A (en) 1965-03-24
DE1209207B (de) 1966-01-20
GB935710A (en) 1963-09-04

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