JPS5781727A - Snubber circuit of gate turn-off thyristor - Google Patents
Snubber circuit of gate turn-off thyristorInfo
- Publication number
- JPS5781727A JPS5781727A JP15701480A JP15701480A JPS5781727A JP S5781727 A JPS5781727 A JP S5781727A JP 15701480 A JP15701480 A JP 15701480A JP 15701480 A JP15701480 A JP 15701480A JP S5781727 A JPS5781727 A JP S5781727A
- Authority
- JP
- Japan
- Prior art keywords
- gto1
- turn
- diode
- thyristor
- overvoltage
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
- H03K17/08—Modifications for protecting switching circuit against overcurrent or overvoltage
- H03K17/081—Modifications for protecting switching circuit against overcurrent or overvoltage without feedback from the output circuit to the control circuit
- H03K17/0814—Modifications for protecting switching circuit against overcurrent or overvoltage without feedback from the output circuit to the control circuit by measures taken in the output circuit
- H03K17/08144—Modifications for protecting switching circuit against overcurrent or overvoltage without feedback from the output circuit to the control circuit by measures taken in the output circuit in thyristor switches
Abstract
PURPOSE:To suppress the overvoltage at the early time of turn-ff, by using a diode to which the platinum is doped for an overvoltage absorbing circuit of a gate turn-off thyristor. CONSTITUTION:A capacitor 2 is connected in series to a parallel circuit of a diode 4 and a resistance 3 to form an overvoltage absorbing circuit. This absorbing circuit is connected in parallel to a gate turn-off thyristor GTO1. When the GTO1 is turned on, the discharged current of the capacitor 2 passes through the resistance 3 to reduce the discharged current value during the turn-on. While the load current passes through the diode 4 to charge the capacitor 2 when the GTO1 is turned off. Thus the voltage increase factor is suppressed for the GTO1. A diode to which the platinum is doped has a low degree of the forward recovery and has a low level of the generated voltage when it is turned on. Accordingly the overvoltage of the GTO1 is suppressed at the early time of turn- off.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP15701480A JPS5781727A (en) | 1980-11-10 | 1980-11-10 | Snubber circuit of gate turn-off thyristor |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP15701480A JPS5781727A (en) | 1980-11-10 | 1980-11-10 | Snubber circuit of gate turn-off thyristor |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS5781727A true JPS5781727A (en) | 1982-05-21 |
Family
ID=15640288
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP15701480A Pending JPS5781727A (en) | 1980-11-10 | 1980-11-10 | Snubber circuit of gate turn-off thyristor |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS5781727A (en) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4678932A (en) * | 1985-04-30 | 1987-07-07 | Mitsubishi Denki Kabushiki Kaisha | Snubber circuit for GTO thyristor |
-
1980
- 1980-11-10 JP JP15701480A patent/JPS5781727A/en active Pending
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4678932A (en) * | 1985-04-30 | 1987-07-07 | Mitsubishi Denki Kabushiki Kaisha | Snubber circuit for GTO thyristor |
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