JPS5752231A - Turn-off system of semiconductor - Google Patents

Turn-off system of semiconductor

Info

Publication number
JPS5752231A
JPS5752231A JP55125928A JP12592880A JPS5752231A JP S5752231 A JPS5752231 A JP S5752231A JP 55125928 A JP55125928 A JP 55125928A JP 12592880 A JP12592880 A JP 12592880A JP S5752231 A JPS5752231 A JP S5752231A
Authority
JP
Japan
Prior art keywords
current
gto11
negative polarity
gate
turn
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP55125928A
Other languages
Japanese (ja)
Inventor
Shoichi Kawamata
Kenichi Onda
Hiroshi Fukui
Makio Sei
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP55125928A priority Critical patent/JPS5752231A/en
Publication of JPS5752231A publication Critical patent/JPS5752231A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/51—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used
    • H03K17/56—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices
    • H03K17/72—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices having more than two PN junctions; having more than three electrodes; having more than one electrode connected to the same conductivity region
    • H03K17/73—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices having more than two PN junctions; having more than three electrodes; having more than one electrode connected to the same conductivity region for dc voltages or currents

Landscapes

  • Thyristor Switches And Gates (AREA)

Abstract

PURPOSE:To turn off a thyristor safely and exactly, by selecting a capacitor whose internal resistance and equivalent series inductance are small, for that which supplies a gate current of negative polarity, to a gate turn-off thyristor. CONSTITUTION:The inside of acapacitor (C)10 for supplying a gate current of negative polarity of a GTO11 has internal resistances R1, R2 and equivalenet inductance L. Charging voltage of the C10 is selected below reverse voltage of the GTO11, the capacity of the C10 accumulates the quantity of charge required for turning off a maximum current of a current IA flowing between main electrodes of the GTO11, and a maximum value of its discharge current exceeds a value required for turning off the current IA, according to which a capacitor is selected. Therefore, the smaller the R1, R2 and the L of the C10 are, the larger a peak value of a gate current IGP of negative polarity becomes, also the C10 is heated low, its deterioration is prevented, and the GTO11 is turned off safely and exactly.
JP55125928A 1980-09-12 1980-09-12 Turn-off system of semiconductor Pending JPS5752231A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP55125928A JPS5752231A (en) 1980-09-12 1980-09-12 Turn-off system of semiconductor

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP55125928A JPS5752231A (en) 1980-09-12 1980-09-12 Turn-off system of semiconductor

Publications (1)

Publication Number Publication Date
JPS5752231A true JPS5752231A (en) 1982-03-27

Family

ID=14922416

Family Applications (1)

Application Number Title Priority Date Filing Date
JP55125928A Pending JPS5752231A (en) 1980-09-12 1980-09-12 Turn-off system of semiconductor

Country Status (1)

Country Link
JP (1) JPS5752231A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5237225A (en) * 1990-12-08 1993-08-17 Asea Brown Boveri Ltd. Switching arrangement for an rf gto

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5237225A (en) * 1990-12-08 1993-08-17 Asea Brown Boveri Ltd. Switching arrangement for an rf gto

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