JPS5780274A - Control circuit for field-effect transistor - Google Patents

Control circuit for field-effect transistor

Info

Publication number
JPS5780274A
JPS5780274A JP55154672A JP15467280A JPS5780274A JP S5780274 A JPS5780274 A JP S5780274A JP 55154672 A JP55154672 A JP 55154672A JP 15467280 A JP15467280 A JP 15467280A JP S5780274 A JPS5780274 A JP S5780274A
Authority
JP
Japan
Prior art keywords
mosfet
gate
source electrodes
transistor
resistor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP55154672A
Other languages
Japanese (ja)
Inventor
Kenichi Onda
Kimihito Abe
Hisao Amano
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP55154672A priority Critical patent/JPS5780274A/en
Publication of JPS5780274A publication Critical patent/JPS5780274A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
    • H02M3/00—Conversion of dc power input into dc power output
    • H02M3/22—Conversion of dc power input into dc power output with intermediate conversion into ac
    • H02M3/24—Conversion of dc power input into dc power output with intermediate conversion into ac by static converters
    • H02M3/28—Conversion of dc power input into dc power output with intermediate conversion into ac by static converters using discharge tubes with control electrode or semiconductor devices with control electrode to produce the intermediate ac
    • H02M3/325—Conversion of dc power input into dc power output with intermediate conversion into ac by static converters using discharge tubes with control electrode or semiconductor devices with control electrode to produce the intermediate ac using devices of a triode or a transistor type requiring continuous application of a control signal
    • H02M3/335—Conversion of dc power input into dc power output with intermediate conversion into ac by static converters using discharge tubes with control electrode or semiconductor devices with control electrode to produce the intermediate ac using devices of a triode or a transistor type requiring continuous application of a control signal using semiconductor devices only
    • H02M3/33538—Conversion of dc power input into dc power output with intermediate conversion into ac by static converters using discharge tubes with control electrode or semiconductor devices with control electrode to produce the intermediate ac using devices of a triode or a transistor type requiring continuous application of a control signal using semiconductor devices only of the forward type

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Inverter Devices (AREA)
  • Control Of Voltage And Current In General (AREA)

Abstract

PURPOSE:To stabilize the characteristics of switching by mounting a means stopping the flow of exciting currents excited at the secondary side of a transformer into a FET and a means discharging the electric charge of capacity between gate and source electrodes when switching the FET. CONSTITUTION:When predetermined control signals are applied to a base electrode of the transistor 6 and the transistor 6 is brought to an on condition, the currents excited at the secondary side of the pulse transformer 2 charge capacity between the gate and source electrodes of the MOSFET 1 through a resistor 42 and a diode 51. prescribe bias voltage is applied between the gate and source electrodes of the MOSFET 1 at the same time, and the MOSFET 1 is brought to an on condition. When control signals are interrupted and the transistor 6 is turned off, energy stored in the pulse transformer 2 flows through a resistor 41 and a diode 5. The exciting currents at the secondary side are stopped by means of the diode 51, and the electric charge stored to capacity between the gate and source electrodes of the MOSFET 1 is discharged through a resistor 43.
JP55154672A 1980-11-05 1980-11-05 Control circuit for field-effect transistor Pending JPS5780274A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP55154672A JPS5780274A (en) 1980-11-05 1980-11-05 Control circuit for field-effect transistor

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP55154672A JPS5780274A (en) 1980-11-05 1980-11-05 Control circuit for field-effect transistor

Publications (1)

Publication Number Publication Date
JPS5780274A true JPS5780274A (en) 1982-05-19

Family

ID=15589371

Family Applications (1)

Application Number Title Priority Date Filing Date
JP55154672A Pending JPS5780274A (en) 1980-11-05 1980-11-05 Control circuit for field-effect transistor

Country Status (1)

Country Link
JP (1) JPS5780274A (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60204269A (en) * 1984-03-28 1985-10-15 Toshiba Electric Equip Corp Power source device
JPS6162367A (en) * 1984-08-29 1986-03-31 バロース・コーポレーシヨン Power source for driving multiplex electrode semiconductor power device
JPH01122373A (en) * 1987-10-30 1989-05-15 Internatl Business Mach Corp <Ibm> Electric source circuit

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60204269A (en) * 1984-03-28 1985-10-15 Toshiba Electric Equip Corp Power source device
JPS6162367A (en) * 1984-08-29 1986-03-31 バロース・コーポレーシヨン Power source for driving multiplex electrode semiconductor power device
JPH01122373A (en) * 1987-10-30 1989-05-15 Internatl Business Mach Corp <Ibm> Electric source circuit

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