JPS54149459A - Gate control circuit of gto thyristor - Google Patents

Gate control circuit of gto thyristor

Info

Publication number
JPS54149459A
JPS54149459A JP5809278A JP5809278A JPS54149459A JP S54149459 A JPS54149459 A JP S54149459A JP 5809278 A JP5809278 A JP 5809278A JP 5809278 A JP5809278 A JP 5809278A JP S54149459 A JPS54149459 A JP S54149459A
Authority
JP
Japan
Prior art keywords
thyristor
capacitor
circuit
ignition
diode
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP5809278A
Other languages
Japanese (ja)
Other versions
JPS5937898B2 (en
Inventor
Toshiaki Jofu
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Meidensha Electric Manufacturing Co Ltd
Original Assignee
Meidensha Electric Manufacturing Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Meidensha Electric Manufacturing Co Ltd filed Critical Meidensha Electric Manufacturing Co Ltd
Priority to JP53058092A priority Critical patent/JPS5937898B2/en
Publication of JPS54149459A publication Critical patent/JPS54149459A/en
Publication of JPS5937898B2 publication Critical patent/JPS5937898B2/en
Expired legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03KPULSE TECHNIQUE
    • H03K17/00Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/51Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used
    • H03K17/56Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices
    • H03K17/72Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices having more than two PN junctions; having more than three electrodes; having more than one electrode connected to the same conductivity region
    • H03K17/73Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices having more than two PN junctions; having more than three electrodes; having more than one electrode connected to the same conductivity region for dc voltages or currents

Landscapes

  • Power Conversion In General (AREA)
  • Thyristor Switches And Gates (AREA)
  • Electronic Switches (AREA)

Abstract

PURPOSE:To reduce di/dt of a GTO thyristor to make a large-capacity power source for a control circuit needless by discharging the charged electric charge of a capacitor for dV/dt control through a thyristor for ignition. CONSTITUTION:GTO thyristor 1 is equipped with capacitor 3 for dV/dt prevention, diode 4 for charging capacitor 3, and discharge current limiting resistance 5 besides diode 2 for feedback. The ignition circuit of the thyristor is formed by a series circuit, which consists of current limiting resistance 6 provided between the high voltage- side terminal of capacitor 3 and the gate of thyristor 1, DIAC 7 as a negative resistance element which performs ON operation under a prescribed voltage, thyristor 8 for ignition, and capacitor 9, and trigger circuit 10 of thyristor 8. The turning- off circuit of thyristor 1 is formed by a series circuit, which consists of DIAC 11 provided between the gate and the cathode of thyristor 1, thyristor 12 for turning-off, and reverse current stopping diode 13, and trigger circuit 14 of thyristor 12.
JP53058092A 1978-05-16 1978-05-16 GTO thyristor gate control circuit Expired JPS5937898B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP53058092A JPS5937898B2 (en) 1978-05-16 1978-05-16 GTO thyristor gate control circuit

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP53058092A JPS5937898B2 (en) 1978-05-16 1978-05-16 GTO thyristor gate control circuit

Publications (2)

Publication Number Publication Date
JPS54149459A true JPS54149459A (en) 1979-11-22
JPS5937898B2 JPS5937898B2 (en) 1984-09-12

Family

ID=13074297

Family Applications (1)

Application Number Title Priority Date Filing Date
JP53058092A Expired JPS5937898B2 (en) 1978-05-16 1978-05-16 GTO thyristor gate control circuit

Country Status (1)

Country Link
JP (1) JPS5937898B2 (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN101984532A (en) * 2010-10-12 2011-03-09 中国电力科学研究院 Novel thyristor dv/dt protection method

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN101984532A (en) * 2010-10-12 2011-03-09 中国电力科学研究院 Novel thyristor dv/dt protection method

Also Published As

Publication number Publication date
JPS5937898B2 (en) 1984-09-12

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