JPS5533350A - Gate circuit for gate turn-off thyristor - Google Patents
Gate circuit for gate turn-off thyristorInfo
- Publication number
- JPS5533350A JPS5533350A JP10573378A JP10573378A JPS5533350A JP S5533350 A JPS5533350 A JP S5533350A JP 10573378 A JP10573378 A JP 10573378A JP 10573378 A JP10573378 A JP 10573378A JP S5533350 A JPS5533350 A JP S5533350A
- Authority
- JP
- Japan
- Prior art keywords
- gate
- gto
- turn
- coff
- gate circuit
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
- H03K17/51—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used
- H03K17/56—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices
- H03K17/72—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices having more than two PN junctions; having more than three electrodes; having more than one electrode connected to the same conductivity region
Abstract
PURPOSE:To obtain a low-cost gate circuit of gate turn-off thyristor GTO by installing the off-driving SCR, the auxiliary SCR to give inversion to the reverse charging voltage of the off-capacitor and the reverse current blocking diode each to the off- gate circuit. CONSTITUTION:Capacitor COFF is charged up to voltage VN by power source N, and the GTO is turned on with application of pulse signal ON. If gate pulse igsoff is suplied under these conditions, SCRSOFF is turned on to flow current igof of the turn-off gate circuit and thus to turn off the GTO. When the discharge current of COFF is extinguished, COFF is reversely charged up to VR by the lead inductance component of the GTO. During this time, gate pulse igsw is applied to turn on auxiliary SCRSW, and SCRSOFF is reversely biased by the reverse current of the reverse charge voltage of COFF to turn off it. In this case, the discharging toward the gate of GTO is prevented by diode D. Thus COFF is charged again up to VN. As a result, the GTO gate circuit can be formed with the low-cost and high-reliability component parts.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP10573378A JPS5533350A (en) | 1978-08-30 | 1978-08-30 | Gate circuit for gate turn-off thyristor |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP10573378A JPS5533350A (en) | 1978-08-30 | 1978-08-30 | Gate circuit for gate turn-off thyristor |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS5533350A true JPS5533350A (en) | 1980-03-08 |
Family
ID=14415479
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP10573378A Pending JPS5533350A (en) | 1978-08-30 | 1978-08-30 | Gate circuit for gate turn-off thyristor |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS5533350A (en) |
-
1978
- 1978-08-30 JP JP10573378A patent/JPS5533350A/en active Pending
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