JPS5530237A - Gate driver for gate turn-off thyristor - Google Patents

Gate driver for gate turn-off thyristor

Info

Publication number
JPS5530237A
JPS5530237A JP10326678A JP10326678A JPS5530237A JP S5530237 A JPS5530237 A JP S5530237A JP 10326678 A JP10326678 A JP 10326678A JP 10326678 A JP10326678 A JP 10326678A JP S5530237 A JPS5530237 A JP S5530237A
Authority
JP
Japan
Prior art keywords
gate
power supply
power circuit
turn
circuit
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP10326678A
Other languages
Japanese (ja)
Other versions
JPS5932012B2 (en
Inventor
Hiromichi Ohashi
Katsuhiko Takigami
Yoshihiro Shirasaka
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Tokyo Shibaura Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp, Tokyo Shibaura Electric Co Ltd filed Critical Toshiba Corp
Priority to JP53103266A priority Critical patent/JPS5932012B2/en
Publication of JPS5530237A publication Critical patent/JPS5530237A/en
Publication of JPS5932012B2 publication Critical patent/JPS5932012B2/en
Expired legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03KPULSE TECHNIQUE
    • H03K17/00Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/51Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used
    • H03K17/56Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices
    • H03K17/72Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices having more than two PN junctions; having more than three electrodes; having more than one electrode connected to the same conductivity region

Abstract

PURPOSE:To shorten extremely the time until a protection circuit is operated by detecting the abnormality of a turn-off power circuit from the increase rate of the rise of negative gate current and then by putting aprotecting power circuit to work. CONSTITUTION:Between the gate and cathode, gate driver unit 22 and protecting power circuit 23 are connected in parallel and to main unit 22, gate turn-off power circuit 26 of electronic switch 24 and direct-current power supply 25 connected in series and gate turn-off power circuit 29 of series-connected direct-current power supply 27 and electronic switch 28 in parallel to circuit 26 are both connected. Once the output of power supply 27 lowers, the increase rate of a negative gate current falls to decrease a voltage across inductance 34 down to less than a reference value, no output is generated by comparator 35 and AND gate 37 becomes open at a lagging point in time, so that the output of inverter 39 will be ''0''. At the same time, both the terminals of capacitor 23 charged higher than the prescribed voltage of power supply 27 are connected between the gate and cathode of GTO3. As a result, GTO3 turns OFF without breaking down by heating.
JP53103266A 1978-08-24 1978-08-24 Gate drive device for gate turn-off thyristor Expired JPS5932012B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP53103266A JPS5932012B2 (en) 1978-08-24 1978-08-24 Gate drive device for gate turn-off thyristor

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP53103266A JPS5932012B2 (en) 1978-08-24 1978-08-24 Gate drive device for gate turn-off thyristor

Publications (2)

Publication Number Publication Date
JPS5530237A true JPS5530237A (en) 1980-03-04
JPS5932012B2 JPS5932012B2 (en) 1984-08-06

Family

ID=14349619

Family Applications (1)

Application Number Title Priority Date Filing Date
JP53103266A Expired JPS5932012B2 (en) 1978-08-24 1978-08-24 Gate drive device for gate turn-off thyristor

Country Status (1)

Country Link
JP (1) JPS5932012B2 (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO1992005636A1 (en) * 1990-09-18 1992-04-02 General Electric Company Gate turnoff thyristor control circuit with shorted gate detection
US5262691A (en) * 1990-09-18 1993-11-16 General Electric Company Gate turnoff thyristor control circuit with shorted gate detection

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6376142U (en) * 1986-05-16 1988-05-20
JPH0527628Y2 (en) * 1987-05-20 1993-07-14

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO1992005636A1 (en) * 1990-09-18 1992-04-02 General Electric Company Gate turnoff thyristor control circuit with shorted gate detection
US5262691A (en) * 1990-09-18 1993-11-16 General Electric Company Gate turnoff thyristor control circuit with shorted gate detection

Also Published As

Publication number Publication date
JPS5932012B2 (en) 1984-08-06

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