JPS5752157A - Semiconductor circuit - Google Patents

Semiconductor circuit

Info

Publication number
JPS5752157A
JPS5752157A JP12820880A JP12820880A JPS5752157A JP S5752157 A JPS5752157 A JP S5752157A JP 12820880 A JP12820880 A JP 12820880A JP 12820880 A JP12820880 A JP 12820880A JP S5752157 A JPS5752157 A JP S5752157A
Authority
JP
Japan
Prior art keywords
collector
induction load
avalanche diode
base
parallel
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP12820880A
Other languages
Japanese (ja)
Inventor
Kunihiro Nakamura
Masashi Jinmon
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Priority to JP12820880A priority Critical patent/JPS5752157A/en
Publication of JPS5752157A publication Critical patent/JPS5752157A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/08—Modifications for protecting switching circuit against overcurrent or overvoltage

Landscapes

  • Bipolar Transistors (AREA)

Abstract

PURPOSE:To absorb the surge voltage from an induction load by connecting the first avalanche diode in parallel with an induction load connected to a collector and connecting the second avalanche diode of the prescribed breakdown voltage between the collector and the base. CONSTITUTION:A transistor circuit connected with the first induction load 8 to the collector of a transistor 5 and the second induction load 10 are connected in parallel with a DC power source 1, the first avalanche diode 9 is connected to reverse polarity to the power source 1 in parallel with the first induction load 8, and the second avalanche diode 12 having the breakdown voltage lower than the reverse withstand voltage between the collector and the base is connected to between the collector and the base of the transistor 5 at the time of opening the base. In this manner, the surge voltage from the induction load can be absorbed by the avalanche diode having relatively low beakdown strength.
JP12820880A 1980-09-16 1980-09-16 Semiconductor circuit Pending JPS5752157A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP12820880A JPS5752157A (en) 1980-09-16 1980-09-16 Semiconductor circuit

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP12820880A JPS5752157A (en) 1980-09-16 1980-09-16 Semiconductor circuit

Publications (1)

Publication Number Publication Date
JPS5752157A true JPS5752157A (en) 1982-03-27

Family

ID=14979149

Family Applications (1)

Application Number Title Priority Date Filing Date
JP12820880A Pending JPS5752157A (en) 1980-09-16 1980-09-16 Semiconductor circuit

Country Status (1)

Country Link
JP (1) JPS5752157A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6271257A (en) * 1985-07-05 1987-04-01 アメリカン　テレフオン　アンド　テレグラフ　カムパニ− Protecting circuit for induction load switch transistor

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6271257A (en) * 1985-07-05 1987-04-01 アメリカン　テレフオン　アンド　テレグラフ　カムパニ− Protecting circuit for induction load switch transistor

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