JPS5752157A - Semiconductor circuit - Google Patents
Semiconductor circuitInfo
- Publication number
- JPS5752157A JPS5752157A JP12820880A JP12820880A JPS5752157A JP S5752157 A JPS5752157 A JP S5752157A JP 12820880 A JP12820880 A JP 12820880A JP 12820880 A JP12820880 A JP 12820880A JP S5752157 A JPS5752157 A JP S5752157A
- Authority
- JP
- Japan
- Prior art keywords
- collector
- induction load
- avalanche diode
- base
- parallel
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
- H03K17/08—Modifications for protecting switching circuit against overcurrent or overvoltage
Landscapes
- Bipolar Transistors (AREA)
Abstract
PURPOSE:To absorb the surge voltage from an induction load by connecting the first avalanche diode in parallel with an induction load connected to a collector and connecting the second avalanche diode of the prescribed breakdown voltage between the collector and the base. CONSTITUTION:A transistor circuit connected with the first induction load 8 to the collector of a transistor 5 and the second induction load 10 are connected in parallel with a DC power source 1, the first avalanche diode 9 is connected to reverse polarity to the power source 1 in parallel with the first induction load 8, and the second avalanche diode 12 having the breakdown voltage lower than the reverse withstand voltage between the collector and the base is connected to between the collector and the base of the transistor 5 at the time of opening the base. In this manner, the surge voltage from the induction load can be absorbed by the avalanche diode having relatively low beakdown strength.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP12820880A JPS5752157A (en) | 1980-09-16 | 1980-09-16 | Semiconductor circuit |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP12820880A JPS5752157A (en) | 1980-09-16 | 1980-09-16 | Semiconductor circuit |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS5752157A true JPS5752157A (en) | 1982-03-27 |
Family
ID=14979149
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP12820880A Pending JPS5752157A (en) | 1980-09-16 | 1980-09-16 | Semiconductor circuit |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS5752157A (en) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS6271257A (en) * | 1985-07-05 | 1987-04-01 | アメリカン テレフオン アンド テレグラフ カムパニ− | Protecting circuit for induction load switch transistor |
-
1980
- 1980-09-16 JP JP12820880A patent/JPS5752157A/en active Pending
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS6271257A (en) * | 1985-07-05 | 1987-04-01 | アメリカン テレフオン アンド テレグラフ カムパニ− | Protecting circuit for induction load switch transistor |
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