JPS57208731A - Gate circuit for gate turn-off thyristor - Google Patents
Gate circuit for gate turn-off thyristorInfo
- Publication number
- JPS57208731A JPS57208731A JP56094951A JP9495181A JPS57208731A JP S57208731 A JPS57208731 A JP S57208731A JP 56094951 A JP56094951 A JP 56094951A JP 9495181 A JP9495181 A JP 9495181A JP S57208731 A JPS57208731 A JP S57208731A
- Authority
- JP
- Japan
- Prior art keywords
- gate
- gto12
- turned
- cathode
- turn
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
- H03K17/51—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used
- H03K17/56—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices
- H03K17/72—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices having more than two PN junctions; having more than three electrodes; having more than one electrode connected to the same conductivity region
- H03K17/73—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices having more than two PN junctions; having more than three electrodes; having more than one electrode connected to the same conductivity region for dc voltages or currents
Landscapes
- Power Conversion In General (AREA)
- Thyristor Switches And Gates (AREA)
Abstract
PURPOSE:To unburden the duty of a Zener diode, by connecting a saturable reactor parallel with the Zener diode for turn-off connected between the gate and cathode of a gate turn-off thyristor. CONSTITUTION:When a transistor 7 is turned on, the gate and cathode of a GTO12 is forward-biased and the GTO12 is turned on. When the GTO12 is to be turned off, a transistor 8 is turned on. Then, reverse current flows from a power supply 2 to the cathode and the gate and the GTO12 is turned off. Although current flows to a Zener diode 15 clamping a voltage between the cathode and gate of the GTO12, when a saturable reactor 16 is saturated with a voltage generated across the diode 15, the current flows to the reactor 16. Thus, the loss due to the diode can be reduced.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP56094951A JPS57208731A (en) | 1981-06-18 | 1981-06-18 | Gate circuit for gate turn-off thyristor |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP56094951A JPS57208731A (en) | 1981-06-18 | 1981-06-18 | Gate circuit for gate turn-off thyristor |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS57208731A true JPS57208731A (en) | 1982-12-21 |
Family
ID=14124246
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP56094951A Pending JPS57208731A (en) | 1981-06-18 | 1981-06-18 | Gate circuit for gate turn-off thyristor |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS57208731A (en) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH02136062A (en) * | 1988-11-15 | 1990-05-24 | Meidensha Corp | Gate circuit of gate turn-off thyristor |
-
1981
- 1981-06-18 JP JP56094951A patent/JPS57208731A/en active Pending
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH02136062A (en) * | 1988-11-15 | 1990-05-24 | Meidensha Corp | Gate circuit of gate turn-off thyristor |
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