JPS5738028A - Gate circuit for gate turnoff thyristor - Google Patents

Gate circuit for gate turnoff thyristor

Info

Publication number
JPS5738028A
JPS5738028A JP11300580A JP11300580A JPS5738028A JP S5738028 A JPS5738028 A JP S5738028A JP 11300580 A JP11300580 A JP 11300580A JP 11300580 A JP11300580 A JP 11300580A JP S5738028 A JPS5738028 A JP S5738028A
Authority
JP
Japan
Prior art keywords
gate
transistors
current
gto
cathode
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP11300580A
Other languages
Japanese (ja)
Inventor
Masayoshi Sato
Hiroshi Fukui
Masayuki Hirose
Yasuo Matsuda
Hisao Amano
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP11300580A priority Critical patent/JPS5738028A/en
Publication of JPS5738028A publication Critical patent/JPS5738028A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/51—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used
    • H03K17/56—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices
    • H03K17/72—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices having more than two PN junctions; having more than three electrodes; having more than one electrode connected to the same conductivity region
    • H03K17/73—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices having more than two PN junctions; having more than three electrodes; having more than one electrode connected to the same conductivity region for dc voltages or currents

Landscapes

  • Thyristor Switches And Gates (AREA)

Abstract

PURPOSE:To avoid avalanche loss, by detecting a reverse voltage between a gate and cathode of a gate turnoff thyristor (GTO) to be a fixed value or more to cut off the off-gate current. CONSTITUTION:When an anode current flows to a GTO, transistors T1, T2, T4 are off because of the forward voltage between gae and cathode, and no signal is present in a control circuit 10, then a diode D2 is forward-biased and transistors T3, T5, T8 are also off. When a turnoff instruction signal is outputted from the control circuit 10, the diode D2 is off and the transistors T3, T5, T8 are on, a current flows to a pulse transformer 9 and an off gate current iG flows. When the GTO turns off and the reverse voltage between the gate and cathode turns on a Zener diode ZD1, the transistors T2, T4, T1 are on. Thus, the transistors T3, T5, T8 are off and the current iG is cut off.
JP11300580A 1980-08-19 1980-08-19 Gate circuit for gate turnoff thyristor Pending JPS5738028A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP11300580A JPS5738028A (en) 1980-08-19 1980-08-19 Gate circuit for gate turnoff thyristor

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP11300580A JPS5738028A (en) 1980-08-19 1980-08-19 Gate circuit for gate turnoff thyristor

Publications (1)

Publication Number Publication Date
JPS5738028A true JPS5738028A (en) 1982-03-02

Family

ID=14601047

Family Applications (1)

Application Number Title Priority Date Filing Date
JP11300580A Pending JPS5738028A (en) 1980-08-19 1980-08-19 Gate circuit for gate turnoff thyristor

Country Status (1)

Country Link
JP (1) JPS5738028A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS62150747A (en) * 1985-12-24 1987-07-04 Rohm Co Ltd Semiconductor device
US11609240B2 (en) 2018-01-29 2023-03-21 Micromeritics Instrument Corporation Locking assembly for a measurement system

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS56122235A (en) * 1980-02-29 1981-09-25 Nippon Telegr & Teleph Corp <Ntt> Semiconductor switch control circuit

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS56122235A (en) * 1980-02-29 1981-09-25 Nippon Telegr & Teleph Corp <Ntt> Semiconductor switch control circuit

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS62150747A (en) * 1985-12-24 1987-07-04 Rohm Co Ltd Semiconductor device
US11609240B2 (en) 2018-01-29 2023-03-21 Micromeritics Instrument Corporation Locking assembly for a measurement system

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