JPS5648719A - High-speed switching circuit - Google Patents

High-speed switching circuit

Info

Publication number
JPS5648719A
JPS5648719A JP12597479A JP12597479A JPS5648719A JP S5648719 A JPS5648719 A JP S5648719A JP 12597479 A JP12597479 A JP 12597479A JP 12597479 A JP12597479 A JP 12597479A JP S5648719 A JPS5648719 A JP S5648719A
Authority
JP
Japan
Prior art keywords
diode
transistor
emitter
reverse recovery
recovery current
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP12597479A
Other languages
Japanese (ja)
Inventor
Takashi Inoue
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Ricoh Co Ltd
Original Assignee
Ricoh Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Ricoh Co Ltd filed Critical Ricoh Co Ltd
Priority to JP12597479A priority Critical patent/JPS5648719A/en
Publication of JPS5648719A publication Critical patent/JPS5648719A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/04—Modifications for accelerating switching

Landscapes

  • Dc-Dc Converters (AREA)
  • Electronic Switches (AREA)

Abstract

PURPOSE:To attain high-efficient, large-electric-power and high-speed switching by permitting the reverse recovery current of a diode to by-pass a transistor, by interposing a capacitor between the anode of the diode and the emitter of transistor. CONSTITUTION:When base-applied voltage (ei) rises, a reverse recovery current is generated at diode D1 and flows from the anode of diode D1 and flows from the anode of diode D1 to the emitter of transistor Q1 via capacitor C2. Since this reverse recovery current never flows between the base and emitter of transistor Q1 by way of diode D2, collector-emitter current ic of transistor Q1 becomes zero immediately, and consequently collector voltage e0 of transistor Q1 rises immediately up to a voltage in a turn-off state, eliminating a time lag. Capacitor C2 which absorbs the reverse recovery current generated by diode D1 in the turn-off state of the above- mentioned transistor Q1 is provided between diode D1 and the emitter of the transistor.
JP12597479A 1979-09-28 1979-09-28 High-speed switching circuit Pending JPS5648719A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP12597479A JPS5648719A (en) 1979-09-28 1979-09-28 High-speed switching circuit

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP12597479A JPS5648719A (en) 1979-09-28 1979-09-28 High-speed switching circuit

Publications (1)

Publication Number Publication Date
JPS5648719A true JPS5648719A (en) 1981-05-02

Family

ID=14923593

Family Applications (1)

Application Number Title Priority Date Filing Date
JP12597479A Pending JPS5648719A (en) 1979-09-28 1979-09-28 High-speed switching circuit

Country Status (1)

Country Link
JP (1) JPS5648719A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5371525A (en) * 1990-11-30 1994-12-06 Kyocera Corporation Image head

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5371525A (en) * 1990-11-30 1994-12-06 Kyocera Corporation Image head

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