JPS63114124A - X線マスク用メンブレンおよび製造法 - Google Patents

X線マスク用メンブレンおよび製造法

Info

Publication number
JPS63114124A
JPS63114124A JP61258337A JP25833786A JPS63114124A JP S63114124 A JPS63114124 A JP S63114124A JP 61258337 A JP61258337 A JP 61258337A JP 25833786 A JP25833786 A JP 25833786A JP S63114124 A JPS63114124 A JP S63114124A
Authority
JP
Japan
Prior art keywords
film
membrane
ray mask
ray
silicon
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP61258337A
Other languages
English (en)
Japanese (ja)
Other versions
JPH0582963B2 (enExample
Inventor
Akira Oibe
及部 晃
Toshihiko Maeda
敏彦 前田
Hiroyuki Nakae
中江 博之
Toshio Hirai
平井 敏雄
Takeshi Masumoto
健 増本
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Furukawa Electric Co Ltd
Japan Science and Technology Agency
Original Assignee
Furukawa Electric Co Ltd
Research Development Corp of Japan
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Furukawa Electric Co Ltd, Research Development Corp of Japan filed Critical Furukawa Electric Co Ltd
Priority to JP61258337A priority Critical patent/JPS63114124A/ja
Priority to US07/111,996 priority patent/US4940851A/en
Priority to KR1019870011695A priority patent/KR940005278B1/ko
Priority to GB8725065A priority patent/GB2198150B/en
Priority to DE19873736933 priority patent/DE3736933A1/de
Publication of JPS63114124A publication Critical patent/JPS63114124A/ja
Publication of JPH0582963B2 publication Critical patent/JPH0582963B2/ja
Granted legal-status Critical Current

Links

Classifications

    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/22Masks or mask blanks for imaging by radiation of 100nm or shorter wavelength, e.g. X-ray masks, extreme ultraviolet [EUV] masks; Preparation thereof

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Preparing Plates And Mask In Photomechanical Process (AREA)
JP61258337A 1986-10-31 1986-10-31 X線マスク用メンブレンおよび製造法 Granted JPS63114124A (ja)

Priority Applications (5)

Application Number Priority Date Filing Date Title
JP61258337A JPS63114124A (ja) 1986-10-31 1986-10-31 X線マスク用メンブレンおよび製造法
US07/111,996 US4940851A (en) 1986-10-31 1987-10-21 Membrane for use in X-ray mask and method for preparing the same
KR1019870011695A KR940005278B1 (ko) 1986-10-31 1987-10-21 X선 마스크용 멤브레인 및 제조법
GB8725065A GB2198150B (en) 1986-10-31 1987-10-26 Membrane for use in x-ray mask and method for preparing the same
DE19873736933 DE3736933A1 (de) 1986-10-31 1987-10-30 Membran fuer die verwendung in einer roentgenstrahlenmaske und verfahren zu ihrer herstellung

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP61258337A JPS63114124A (ja) 1986-10-31 1986-10-31 X線マスク用メンブレンおよび製造法

Publications (2)

Publication Number Publication Date
JPS63114124A true JPS63114124A (ja) 1988-05-19
JPH0582963B2 JPH0582963B2 (enExample) 1993-11-24

Family

ID=17318842

Family Applications (1)

Application Number Title Priority Date Filing Date
JP61258337A Granted JPS63114124A (ja) 1986-10-31 1986-10-31 X線マスク用メンブレンおよび製造法

Country Status (5)

Country Link
US (1) US4940851A (enExample)
JP (1) JPS63114124A (enExample)
KR (1) KR940005278B1 (enExample)
DE (1) DE3736933A1 (enExample)
GB (1) GB2198150B (enExample)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6632750B2 (en) * 2000-07-31 2003-10-14 Hitachi, Ltd. Manufacturing method of semiconductor integrated circuit device
JP2004102367A (ja) * 2002-09-04 2004-04-02 Hitachi Ltd 需給計画方法およびシステム
US9454158B2 (en) 2013-03-15 2016-09-27 Bhushan Somani Real time diagnostics for flow controller systems and methods
JP7084306B2 (ja) * 2017-02-24 2022-06-14 古河電気工業株式会社 マスク一体型表面保護テープおよびそれを用いる半導体チップの製造方法
US10983538B2 (en) 2017-02-27 2021-04-20 Flow Devices And Systems Inc. Systems and methods for flow sensor back pressure adjustment for mass flow controller

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB2100759B (en) * 1977-12-22 1983-06-08 Canon Kk Electrophotographic photosensitive member and process for production thereof
US4265991A (en) * 1977-12-22 1981-05-05 Canon Kabushiki Kaisha Electrophotographic photosensitive member and process for production thereof
GB1603449A (en) * 1978-05-31 1981-11-25 Chemetal Corp Method for the formation of hard deposits
US4171489A (en) * 1978-09-13 1979-10-16 Bell Telephone Laboratories, Incorporated Radiation mask structure
US4222760A (en) * 1979-08-02 1980-09-16 Corning Glass Works Preparation of oxynitride glass-ceramics
JPS5626771A (en) * 1979-08-14 1981-03-14 Sumitomo Electric Industries Sintered body for cast iron cutting tool and its manufacture
JPS6022676B2 (ja) * 1980-02-23 1985-06-03 日本鋼管株式会社 窒化硅素・窒化硼素複合焼結体及びその製造方法
JPS594501B2 (ja) * 1980-08-19 1984-01-30 日本油脂株式会社 高硬度焼結体
JPS59152269A (ja) * 1983-02-08 1984-08-30 九州耐火煉瓦株式会社 窒化珪素系複合耐火物
JPS59169982A (ja) * 1983-03-17 1984-09-26 黒崎窒業株式会社 窒化硼素含有耐火物
JPS6340307A (ja) * 1986-08-05 1988-02-20 Tamura Seisakusho Co Ltd 磁束平衡法用トランス

Also Published As

Publication number Publication date
GB2198150B (en) 1991-02-06
US4940851A (en) 1990-07-10
DE3736933A1 (de) 1988-05-05
KR940005278B1 (ko) 1994-06-15
DE3736933C2 (enExample) 1990-06-07
GB2198150A (en) 1988-06-08
GB8725065D0 (en) 1987-12-02
KR880005668A (ko) 1988-06-29
JPH0582963B2 (enExample) 1993-11-24

Similar Documents

Publication Publication Date Title
US5104690A (en) CVD thin film compounds
JPS61256663A (ja) 半導体装置
JPS61223183A (ja) 菱面体晶系窒化ホウ素の製造方法
JP3502504B2 (ja) 酸化ケイ素層の析出方法
KR950009904A (ko) 입자 크기가 큰 다결정 규소 박막의 제조 방법
JPS6170716A (ja) シリコン薄膜ピエゾ抵抗素子の製造法
JPS63114124A (ja) X線マスク用メンブレンおよび製造法
TW442672B (en) The technique for deposition multilayer interference thin films by using only one coating material (pure silicon)
US20240270633A1 (en) Methods for encapsulating silver mirrors on optical structures
KR101919086B1 (ko) 다결정 실리콘 박막 형성 방법
JPH03139836A (ja) ガラス基板上に窒化ケイ素層を堆積させる方法
JPS63317676A (ja) 無粒構造金属化合物薄膜の製造方法
JPH04137725A (ja) ガラス基板多結晶シリコン薄膜
JPH02262324A (ja) X線透過膜およびその製造方法
JPS60231498A (ja) ダイヤモンド低圧合成法
JPH04171915A (ja) X線リソグラフィー用マスクに用いるx線透過膜
JPH03183776A (ja) アモルファスbn膜の製造方法及びアモルファスbn膜
JPS6126501B2 (enExample)
JPH0715880B2 (ja) X線リソグラフィー用SiC膜、その製造方法およびX線リソグラフィー用マスク
JPS5927519A (ja) インジウム−アンチモン−ヒ素系化合物半導体薄膜の製造方法
JPH086180B2 (ja) 結晶性SiC膜の製造法
McGinnis et al. Use of oxygen-stabilized C60 films for selective chemical vapor deposition
JPH02241020A (ja) X線マスクブランクス、x線マスク構造体、x線露光装置及びx線露光方法
CN118888254A (zh) 一种磁各向异性薄膜及其制备方法
JP3311472B2 (ja) X線及び電子線リソグラフィ用マスクメンブレン