JPH0582963B2 - - Google Patents

Info

Publication number
JPH0582963B2
JPH0582963B2 JP25833786A JP25833786A JPH0582963B2 JP H0582963 B2 JPH0582963 B2 JP H0582963B2 JP 25833786 A JP25833786 A JP 25833786A JP 25833786 A JP25833786 A JP 25833786A JP H0582963 B2 JPH0582963 B2 JP H0582963B2
Authority
JP
Japan
Prior art keywords
film
membrane
atomic ratio
silicon
atomic percent
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP25833786A
Other languages
English (en)
Japanese (ja)
Other versions
JPS63114124A (ja
Inventor
Akira Oibe
Toshihiko Maeda
Hiroyuki Nakae
Toshio Hirai
Takeshi Masumoto
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Furukawa Electric Co Ltd
Original Assignee
Furukawa Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Furukawa Electric Co Ltd filed Critical Furukawa Electric Co Ltd
Priority to JP61258337A priority Critical patent/JPS63114124A/ja
Priority to KR1019870011695A priority patent/KR940005278B1/ko
Priority to US07/111,996 priority patent/US4940851A/en
Priority to GB8725065A priority patent/GB2198150B/en
Priority to DE19873736933 priority patent/DE3736933A1/de
Publication of JPS63114124A publication Critical patent/JPS63114124A/ja
Publication of JPH0582963B2 publication Critical patent/JPH0582963B2/ja
Granted legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/22—Masks or mask blanks for imaging by radiation of 100nm or shorter wavelength, e.g. X-ray masks, extreme ultraviolet [EUV] masks; Preparation thereof
    • G03F1/24—Reflection masks; Preparation thereof
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/22—Masks or mask blanks for imaging by radiation of 100nm or shorter wavelength, e.g. X-ray masks, extreme ultraviolet [EUV] masks; Preparation thereof

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Preparing Plates And Mask In Photomechanical Process (AREA)
JP61258337A 1986-10-31 1986-10-31 Ｘ線マスク用メンブレンおよび製造法 Granted JPS63114124A (ja)

Priority Applications (5)

Application Number Priority Date Filing Date Title
JP61258337A JPS63114124A (ja) 1986-10-31 1986-10-31 Ｘ線マスク用メンブレンおよび製造法
KR1019870011695A KR940005278B1 (ko) 1986-10-31 1987-10-21 X선 마스크용 멤브레인 및 제조법
US07/111,996 US4940851A (en) 1986-10-31 1987-10-21 Membrane for use in X-ray mask and method for preparing the same
GB8725065A GB2198150B (en) 1986-10-31 1987-10-26 Membrane for use in x-ray mask and method for preparing the same
DE19873736933 DE3736933A1 (de) 1986-10-31 1987-10-30 Membran fuer die verwendung in einer roentgenstrahlenmaske und verfahren zu ihrer herstellung

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP61258337A JPS63114124A (ja) 1986-10-31 1986-10-31 Ｘ線マスク用メンブレンおよび製造法

Publications (2)

Publication Number Publication Date
JPS63114124A JPS63114124A (ja) 1988-05-19
JPH0582963B2 true JPH0582963B2 (enExample) 1993-11-24

Family

ID=17318842

Family Applications (1)

Application Number Title Priority Date Filing Date
JP61258337A Granted JPS63114124A (ja) 1986-10-31 1986-10-31 Ｘ線マスク用メンブレンおよび製造法

Country Status (5)

Country Link
US (1) US4940851A (enExample)
JP (1) JPS63114124A (enExample)
KR (1) KR940005278B1 (enExample)
DE (1) DE3736933A1 (enExample)
GB (1) GB2198150B (enExample)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6632750B2 (en) * 2000-07-31 2003-10-14 Hitachi, Ltd. Manufacturing method of semiconductor integrated circuit device
JP2004102367A (ja) * 2002-09-04 2004-04-02 Hitachi Ltd 需給計画方法およびシステム
US9454158B2 (en) 2013-03-15 2016-09-27 Bhushan Somani Real time diagnostics for flow controller systems and methods
SG11201906797WA (en) * 2017-02-24 2019-08-27 Furukawa Electric Co Ltd Mask-integrated surface protective tape, and method of producing a semiconductor chip using the same
US10983537B2 (en) 2017-02-27 2021-04-20 Flow Devices And Systems Inc. Systems and methods for flow sensor back pressure adjustment for mass flow controller

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
AU530905B2 (en) * 1977-12-22 1983-08-04 Canon Kabushiki Kaisha Electrophotographic photosensitive member
GB2100759B (en) * 1977-12-22 1983-06-08 Canon Kk Electrophotographic photosensitive member and process for production thereof
GB1603449A (en) * 1978-05-31 1981-11-25 Chemetal Corp Method for the formation of hard deposits
US4171489A (en) * 1978-09-13 1979-10-16 Bell Telephone Laboratories, Incorporated Radiation mask structure
US4222760A (en) * 1979-08-02 1980-09-16 Corning Glass Works Preparation of oxynitride glass-ceramics
JPS5626771A (en) * 1979-08-14 1981-03-14 Sumitomo Electric Industries Sintered body for cast iron cutting tool and its manufacture
JPS6022676B2 (ja) * 1980-02-23 1985-06-03 日本鋼管株式会社 窒化硅素・窒化硼素複合焼結体及びその製造方法
JPS594501B2 (ja) * 1980-08-19 1984-01-30 日本油脂株式会社 高硬度焼結体
JPS59152269A (ja) * 1983-02-08 1984-08-30 九州耐火煉瓦株式会社 窒化珪素系複合耐火物
JPS59169982A (ja) * 1983-03-17 1984-09-26 黒崎窒業株式会社 窒化硼素含有耐火物
JPS6340307A (ja) * 1986-08-05 1988-02-20 Tamura Seisakusho Co Ltd 磁束平衡法用トランス

Also Published As

Publication number Publication date
US4940851A (en) 1990-07-10
KR880005668A (ko) 1988-06-29
KR940005278B1 (ko) 1994-06-15
GB2198150A (en) 1988-06-08
DE3736933C2 (enExample) 1990-06-07
GB8725065D0 (en) 1987-12-02
JPS63114124A (ja) 1988-05-19
GB2198150B (en) 1991-02-06
DE3736933A1 (de) 1988-05-05

Similar Documents

Publication Publication Date Title
US7981810B1 (en) Methods of depositing highly selective transparent ashable hardmask films
US20080286448A1 (en) Synthesis of transparent conducting oxide coatings
JPS61223183A (ja) 菱面体晶系窒化ホウ素の製造方法
JP3592218B2 (ja) 水晶薄膜の製造方法
US5162133A (en) Process for fabricating silicon carbide films with a predetermined stress
JPH0582963B2 (enExample)
JPH069183B2 (ja) 非晶質炭素支持膜を利用したｘ―線リソグラフイツクマスクの製造方法
TW442672B (en) The technique for deposition multilayer interference thin films by using only one coating material (pure silicon)
JPH04299515A (ja) Ｘ線リソグラフィ−マスク用ｘ線透過膜およびその製造方法
JPH07118854A (ja) 炭化ケイ素膜の形成方法
US5234609A (en) X-ray permeable membrane for X-ray lithographic mask
CN117165917A (zh) 一种制备大尺寸单层二硫化铼薄膜的方法
US6366640B1 (en) X-ray mask blank, X-ray mask and method for manufacturing the same
JPH02262324A (ja) Ｘ線透過膜およびその製造方法
JPH04171915A (ja) Ｘ線リソグラフィー用マスクに用いるｘ線透過膜
JPH0492893A (ja) ダイヤモンド単結晶薄膜の気相合成方法
JP3866912B2 (ja) リソグラフィ用マスク基板およびその製造方法
JP2000216075A (ja) Ｘ線露光用マスクの製造方法
JPS63145777A (ja) 六方晶窒化硼素膜の製造方法
JPS63145779A (ja) 六方晶窒化硼素膜の応力制御方法
JP7738199B2 (ja) 金属ケイ化物のキャッピング層が形成されたペリクルの製造方法およびこれにより製造されたペリクル
CN113380603B (zh) 高硼组分二维iii族多元氮化物混合晶体及其制备方法
JP3305458B2 (ja) Ｘ線リソグラフィマスク
JP3220246B2 (ja) Ｘ線マスクの製造方法
JPH10172884A (ja) Ｘ線リソグラフィー用マスクメンブレン及びその製造方法