KR940005278B1 - X선 마스크용 멤브레인 및 제조법 - Google Patents
X선 마스크용 멤브레인 및 제조법 Download PDFInfo
- Publication number
- KR940005278B1 KR940005278B1 KR1019870011695A KR870011695A KR940005278B1 KR 940005278 B1 KR940005278 B1 KR 940005278B1 KR 1019870011695 A KR1019870011695 A KR 1019870011695A KR 870011695 A KR870011695 A KR 870011695A KR 940005278 B1 KR940005278 B1 KR 940005278B1
- Authority
- KR
- South Korea
- Prior art keywords
- atomic
- membrane
- film
- silicon
- atomic ratio
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
Images
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/22—Masks or mask blanks for imaging by radiation of 100nm or shorter wavelength, e.g. X-ray masks, extreme ultraviolet [EUV] masks; Preparation thereof
- G03F1/24—Reflection masks; Preparation thereof
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/22—Masks or mask blanks for imaging by radiation of 100nm or shorter wavelength, e.g. X-ray masks, extreme ultraviolet [EUV] masks; Preparation thereof
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
- Preparing Plates And Mask In Photomechanical Process (AREA)
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP258337 | 1986-10-31 | ||
| JP61258337A JPS63114124A (ja) | 1986-10-31 | 1986-10-31 | X線マスク用メンブレンおよび製造法 |
| JP61-258337 | 1986-10-31 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| KR880005668A KR880005668A (ko) | 1988-06-29 |
| KR940005278B1 true KR940005278B1 (ko) | 1994-06-15 |
Family
ID=17318842
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| KR1019870011695A Expired - Fee Related KR940005278B1 (ko) | 1986-10-31 | 1987-10-21 | X선 마스크용 멤브레인 및 제조법 |
Country Status (5)
| Country | Link |
|---|---|
| US (1) | US4940851A (enExample) |
| JP (1) | JPS63114124A (enExample) |
| KR (1) | KR940005278B1 (enExample) |
| DE (1) | DE3736933A1 (enExample) |
| GB (1) | GB2198150B (enExample) |
Families Citing this family (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6632750B2 (en) * | 2000-07-31 | 2003-10-14 | Hitachi, Ltd. | Manufacturing method of semiconductor integrated circuit device |
| JP2004102367A (ja) * | 2002-09-04 | 2004-04-02 | Hitachi Ltd | 需給計画方法およびシステム |
| US9454158B2 (en) | 2013-03-15 | 2016-09-27 | Bhushan Somani | Real time diagnostics for flow controller systems and methods |
| SG11201906797WA (en) * | 2017-02-24 | 2019-08-27 | Furukawa Electric Co Ltd | Mask-integrated surface protective tape, and method of producing a semiconductor chip using the same |
| US10983537B2 (en) | 2017-02-27 | 2021-04-20 | Flow Devices And Systems Inc. | Systems and methods for flow sensor back pressure adjustment for mass flow controller |
Family Cites Families (11)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| AU530905B2 (en) * | 1977-12-22 | 1983-08-04 | Canon Kabushiki Kaisha | Electrophotographic photosensitive member |
| GB2100759B (en) * | 1977-12-22 | 1983-06-08 | Canon Kk | Electrophotographic photosensitive member and process for production thereof |
| GB1603449A (en) * | 1978-05-31 | 1981-11-25 | Chemetal Corp | Method for the formation of hard deposits |
| US4171489A (en) * | 1978-09-13 | 1979-10-16 | Bell Telephone Laboratories, Incorporated | Radiation mask structure |
| US4222760A (en) * | 1979-08-02 | 1980-09-16 | Corning Glass Works | Preparation of oxynitride glass-ceramics |
| JPS5626771A (en) * | 1979-08-14 | 1981-03-14 | Sumitomo Electric Industries | Sintered body for cast iron cutting tool and its manufacture |
| JPS6022676B2 (ja) * | 1980-02-23 | 1985-06-03 | 日本鋼管株式会社 | 窒化硅素・窒化硼素複合焼結体及びその製造方法 |
| JPS594501B2 (ja) * | 1980-08-19 | 1984-01-30 | 日本油脂株式会社 | 高硬度焼結体 |
| JPS59152269A (ja) * | 1983-02-08 | 1984-08-30 | 九州耐火煉瓦株式会社 | 窒化珪素系複合耐火物 |
| JPS59169982A (ja) * | 1983-03-17 | 1984-09-26 | 黒崎窒業株式会社 | 窒化硼素含有耐火物 |
| JPS6340307A (ja) * | 1986-08-05 | 1988-02-20 | Tamura Seisakusho Co Ltd | 磁束平衡法用トランス |
-
1986
- 1986-10-31 JP JP61258337A patent/JPS63114124A/ja active Granted
-
1987
- 1987-10-21 KR KR1019870011695A patent/KR940005278B1/ko not_active Expired - Fee Related
- 1987-10-21 US US07/111,996 patent/US4940851A/en not_active Expired - Fee Related
- 1987-10-26 GB GB8725065A patent/GB2198150B/en not_active Expired - Lifetime
- 1987-10-30 DE DE19873736933 patent/DE3736933A1/de active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| US4940851A (en) | 1990-07-10 |
| KR880005668A (ko) | 1988-06-29 |
| GB2198150A (en) | 1988-06-08 |
| DE3736933C2 (enExample) | 1990-06-07 |
| GB8725065D0 (en) | 1987-12-02 |
| JPS63114124A (ja) | 1988-05-19 |
| JPH0582963B2 (enExample) | 1993-11-24 |
| GB2198150B (en) | 1991-02-06 |
| DE3736933A1 (de) | 1988-05-05 |
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| US5629053A (en) | Method for manufacturing microcrystalline cubic boron-nitride-layers | |
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| KR940005278B1 (ko) | X선 마스크용 멤브레인 및 제조법 | |
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| RU2286616C2 (ru) | Способ изготовления изделия, содержащего кремниевую подложку с пленкой из карбида кремния на ее поверхности | |
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| JPS63145779A (ja) | 六方晶窒化硼素膜の応力制御方法 | |
| Goela et al. | Postdeposition Process for Improving Optical Properties of Chemical‐Vapor‐Deposited Silicon | |
| US6413681B1 (en) | Diamond film for x-ray lithography and making method | |
| KR100450366B1 (ko) | 비스무트 화합물의 제조 방법 |
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