JPS6237527B2 - - Google Patents
Info
- Publication number
- JPS6237527B2 JPS6237527B2 JP15288778A JP15288778A JPS6237527B2 JP S6237527 B2 JPS6237527 B2 JP S6237527B2 JP 15288778 A JP15288778 A JP 15288778A JP 15288778 A JP15288778 A JP 15288778A JP S6237527 B2 JPS6237527 B2 JP S6237527B2
- Authority
- JP
- Japan
- Prior art keywords
- gas
- reactive gas
- film
- substrate
- silicon carbide
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 239000007789 gas Substances 0.000 claims description 46
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 claims description 40
- 239000000758 substrate Substances 0.000 claims description 40
- 239000004065 semiconductor Substances 0.000 claims description 25
- 238000006243 chemical reaction Methods 0.000 claims description 23
- 229910052739 hydrogen Inorganic materials 0.000 claims description 19
- 239000001257 hydrogen Substances 0.000 claims description 17
- 229910052710 silicon Inorganic materials 0.000 claims description 17
- 239000010703 silicon Substances 0.000 claims description 16
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 claims description 14
- 238000000034 method Methods 0.000 claims description 13
- 238000010438 heat treatment Methods 0.000 claims description 8
- 229910021332 silicide Inorganic materials 0.000 claims description 6
- FVBUAEGBCNSCDD-UHFFFAOYSA-N silicide(4-) Chemical compound [Si-4] FVBUAEGBCNSCDD-UHFFFAOYSA-N 0.000 claims description 6
- 230000015572 biosynthetic process Effects 0.000 claims description 5
- 238000004519 manufacturing process Methods 0.000 claims description 5
- 230000005284 excitation Effects 0.000 claims description 4
- 238000010574 gas phase reaction Methods 0.000 claims description 3
- 229910052736 halogen Inorganic materials 0.000 claims description 3
- 150000002367 halogens Chemical class 0.000 claims description 3
- 229910021419 crystalline silicon Inorganic materials 0.000 claims 1
- 229910010271 silicon carbide Inorganic materials 0.000 description 37
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 22
- 229910052799 carbon Inorganic materials 0.000 description 22
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 18
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 14
- 239000012535 impurity Substances 0.000 description 14
- 229910052757 nitrogen Inorganic materials 0.000 description 12
- 239000011248 coating agent Substances 0.000 description 8
- 238000000576 coating method Methods 0.000 description 8
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 6
- 150000001721 carbon Chemical class 0.000 description 6
- VNWKTOKETHGBQD-UHFFFAOYSA-N methane Chemical compound C VNWKTOKETHGBQD-UHFFFAOYSA-N 0.000 description 6
- 229910052760 oxygen Inorganic materials 0.000 description 6
- 239000001301 oxygen Substances 0.000 description 6
- 150000003376 silicon Chemical class 0.000 description 6
- 239000010410 layer Substances 0.000 description 5
- 230000003287 optical effect Effects 0.000 description 5
- 229910052698 phosphorus Inorganic materials 0.000 description 5
- 238000000137 annealing Methods 0.000 description 4
- 239000004020 conductor Substances 0.000 description 4
- 239000013078 crystal Substances 0.000 description 4
- 230000006698 induction Effects 0.000 description 4
- 238000004544 sputter deposition Methods 0.000 description 4
- 239000000126 substance Substances 0.000 description 4
- 230000007423 decrease Effects 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 150000002431 hydrogen Chemical class 0.000 description 3
- 238000002156 mixing Methods 0.000 description 3
- VZGDMQKNWNREIO-UHFFFAOYSA-N tetrachloromethane Chemical compound ClC(Cl)(Cl)Cl VZGDMQKNWNREIO-UHFFFAOYSA-N 0.000 description 3
- 239000012808 vapor phase Substances 0.000 description 3
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 3
- VXEGSRKPIUDPQT-UHFFFAOYSA-N 4-[4-(4-methoxyphenyl)piperazin-1-yl]aniline Chemical compound C1=CC(OC)=CC=C1N1CCN(C=2C=CC(N)=CC=2)CC1 VXEGSRKPIUDPQT-UHFFFAOYSA-N 0.000 description 2
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 2
- 125000006414 CCl Chemical group ClC* 0.000 description 2
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 2
- ATUOYWHBWRKTHZ-UHFFFAOYSA-N Propane Chemical compound CCC ATUOYWHBWRKTHZ-UHFFFAOYSA-N 0.000 description 2
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 2
- 125000004429 atom Chemical group 0.000 description 2
- 229910052796 boron Inorganic materials 0.000 description 2
- 239000000969 carrier Substances 0.000 description 2
- 239000012159 carrier gas Substances 0.000 description 2
- 239000007795 chemical reaction product Substances 0.000 description 2
- 238000007796 conventional method Methods 0.000 description 2
- 239000007788 liquid Substances 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 2
- 230000003472 neutralizing effect Effects 0.000 description 2
- 239000011574 phosphorus Substances 0.000 description 2
- 238000010926 purge Methods 0.000 description 2
- 230000006798 recombination Effects 0.000 description 2
- 229910000077 silane Inorganic materials 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 239000005049 silicon tetrachloride Substances 0.000 description 2
- VEXZGXHMUGYJMC-UHFFFAOYSA-M Chloride anion Chemical compound [Cl-] VEXZGXHMUGYJMC-UHFFFAOYSA-M 0.000 description 1
- OTMSDBZUPAUEDD-UHFFFAOYSA-N Ethane Chemical compound CC OTMSDBZUPAUEDD-UHFFFAOYSA-N 0.000 description 1
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 description 1
- YZCKVEUIGOORGS-UHFFFAOYSA-N Hydrogen atom Chemical compound [H] YZCKVEUIGOORGS-UHFFFAOYSA-N 0.000 description 1
- XYFCBTPGUUZFHI-UHFFFAOYSA-N Phosphine Chemical compound P XYFCBTPGUUZFHI-UHFFFAOYSA-N 0.000 description 1
- 229910003902 SiCl 4 Inorganic materials 0.000 description 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- NRTOMJZYCJJWKI-UHFFFAOYSA-N Titanium nitride Chemical compound [Ti]#N NRTOMJZYCJJWKI-UHFFFAOYSA-N 0.000 description 1
- UMVBXBACMIOFDO-UHFFFAOYSA-N [N].[Si] Chemical compound [N].[Si] UMVBXBACMIOFDO-UHFFFAOYSA-N 0.000 description 1
- 230000001133 acceleration Effects 0.000 description 1
- 230000003213 activating effect Effects 0.000 description 1
- 239000002156 adsorbate Substances 0.000 description 1
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 1
- 229910021417 amorphous silicon Inorganic materials 0.000 description 1
- 239000003963 antioxidant agent Substances 0.000 description 1
- 230000003078 antioxidant effect Effects 0.000 description 1
- RBFQJDQYXXHULB-UHFFFAOYSA-N arsane Chemical compound [AsH3] RBFQJDQYXXHULB-UHFFFAOYSA-N 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- -1 chloride gas Chemical class 0.000 description 1
- SLLGVCUQYRMELA-UHFFFAOYSA-N chlorosilicon Chemical compound Cl[Si] SLLGVCUQYRMELA-UHFFFAOYSA-N 0.000 description 1
- 239000002131 composite material Substances 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 230000002542 deteriorative effect Effects 0.000 description 1
- MROCJMGDEKINLD-UHFFFAOYSA-N dichlorosilane Chemical compound Cl[SiH2]Cl MROCJMGDEKINLD-UHFFFAOYSA-N 0.000 description 1
- BUMGIEFFCMBQDG-UHFFFAOYSA-N dichlorosilicon Chemical compound Cl[Si]Cl BUMGIEFFCMBQDG-UHFFFAOYSA-N 0.000 description 1
- 238000002003 electron diffraction Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 229910052732 germanium Inorganic materials 0.000 description 1
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 229910002804 graphite Inorganic materials 0.000 description 1
- 239000010439 graphite Substances 0.000 description 1
- 150000004820 halides Chemical class 0.000 description 1
- 239000008240 homogeneous mixture Substances 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 238000006386 neutralization reaction Methods 0.000 description 1
- 150000002829 nitrogen Chemical class 0.000 description 1
- 239000011368 organic material Substances 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 239000012071 phase Substances 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 239000001294 propane Substances 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- 238000005215 recombination Methods 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- 239000002356 single layer Substances 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 229910001220 stainless steel Inorganic materials 0.000 description 1
- 239000010935 stainless steel Substances 0.000 description 1
- XOLBLPGZBRYERU-UHFFFAOYSA-N tin dioxide Chemical compound O=[Sn]=O XOLBLPGZBRYERU-UHFFFAOYSA-N 0.000 description 1
- 229910001887 tin oxide Inorganic materials 0.000 description 1
- 239000010936 titanium Substances 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
- ZDHXKXAHOVTTAH-UHFFFAOYSA-N trichlorosilane Chemical compound Cl[SiH](Cl)Cl ZDHXKXAHOVTTAH-UHFFFAOYSA-N 0.000 description 1
- 239000005052 trichlorosilane Substances 0.000 description 1
Classifications
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP15288778A JPS5578524A (en) | 1978-12-10 | 1978-12-10 | Manufacture of semiconductor device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP15288778A JPS5578524A (en) | 1978-12-10 | 1978-12-10 | Manufacture of semiconductor device |
Related Child Applications (8)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP5560881A Division JPS56153727A (en) | 1981-04-15 | 1981-04-15 | Manufacture of semiconductor device |
| JP5560781A Division JPS56169321A (en) | 1981-04-15 | 1981-04-15 | Silicon carbide semiconductor |
| JP5560681A Division JPS56169320A (en) | 1981-04-15 | 1981-04-15 | Silicon carbide semiconductor |
| JP57126046A Division JPS5825226A (ja) | 1982-07-19 | 1982-07-19 | プラズマ気相反応装置 |
| JP57126047A Division JPS5825227A (ja) | 1982-07-19 | 1982-07-19 | 半導体装置作製方法 |
| JP58048504A Division JPS5967625A (ja) | 1983-03-23 | 1983-03-23 | 半導体 |
| JP62065997A Division JPS6366922A (ja) | 1987-03-20 | 1987-03-20 | 半導体装置作製方法 |
| JP62065998A Division JPS6366923A (ja) | 1987-03-20 | 1987-03-20 | 連続式半導体被膜形成装置 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS5578524A JPS5578524A (en) | 1980-06-13 |
| JPS6237527B2 true JPS6237527B2 (de) | 1987-08-13 |
Family
ID=15550286
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP15288778A Granted JPS5578524A (en) | 1978-12-10 | 1978-12-10 | Manufacture of semiconductor device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5578524A (de) |
Families Citing this family (52)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5795677A (en) * | 1980-12-03 | 1982-06-14 | Kanegafuchi Chem Ind Co Ltd | Amorphous silicon type photoelectric tranducer |
| US4400409A (en) * | 1980-05-19 | 1983-08-23 | Energy Conversion Devices, Inc. | Method of making p-doped silicon films |
| JPS5742331A (en) * | 1980-08-26 | 1982-03-09 | Canon Inc | Manufacture for deposited film |
| JPS5773174A (en) * | 1980-10-24 | 1982-05-07 | Semiconductor Energy Lab Co Ltd | Manufacturing apparatus for coating film |
| JPS5787120A (en) * | 1980-11-20 | 1982-05-31 | Matsushita Electric Ind Co Ltd | Method and device for plasma cvd |
| US4369730A (en) * | 1981-03-16 | 1983-01-25 | Energy Conversion Devices, Inc. | Cathode for generating a plasma |
| JPS56169320A (en) * | 1981-04-15 | 1981-12-26 | Shunpei Yamazaki | Silicon carbide semiconductor |
| JPS57194521A (en) * | 1981-05-25 | 1982-11-30 | Sekisui Chem Co Ltd | Manufacture of thin film semiconductor |
| JPS5821817A (ja) * | 1981-07-31 | 1983-02-08 | Nippon Telegr & Teleph Corp <Ntt> | 非晶質多層薄膜作製装置 |
| JPS5850733A (ja) * | 1981-09-21 | 1983-03-25 | Fuji Electric Corp Res & Dev Ltd | 太陽電池用薄膜量産装置 |
| US4438723A (en) * | 1981-09-28 | 1984-03-27 | Energy Conversion Devices, Inc. | Multiple chamber deposition and isolation system and method |
| JPS5860537U (ja) * | 1981-10-21 | 1983-04-23 | 市光工業株式会社 | 車輛用灯具 |
| JPS5893322A (ja) * | 1981-11-30 | 1983-06-03 | Semiconductor Energy Lab Co Ltd | 半導体装置製造装置 |
| JPS5893321A (ja) * | 1981-11-30 | 1983-06-03 | Semiconductor Energy Lab Co Ltd | 半導体装置製造装置 |
| US4423701A (en) * | 1982-03-29 | 1984-01-03 | Energy Conversion Devices, Inc. | Glow discharge deposition apparatus including a non-horizontally disposed cathode |
| JPS5916329A (ja) * | 1982-07-19 | 1984-01-27 | Semiconductor Energy Lab Co Ltd | プラズマ気相反応装置 |
| JPS5916328A (ja) * | 1982-07-19 | 1984-01-27 | Semiconductor Energy Lab Co Ltd | プラズマ気相反応装置 |
| US5391893A (en) | 1985-05-07 | 1995-02-21 | Semicoductor Energy Laboratory Co., Ltd. | Nonsingle crystal semiconductor and a semiconductor device using such semiconductor |
| US6346716B1 (en) | 1982-12-23 | 2002-02-12 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor material having particular oxygen concentration and semiconductor device comprising the same |
| US5468653A (en) * | 1982-08-24 | 1995-11-21 | Semiconductor Energy Laboratory Co., Ltd. | Photoelectric conversion device and method of making the same |
| JPS59115574A (ja) | 1982-12-23 | 1984-07-04 | Semiconductor Energy Lab Co Ltd | 光電変換装置作製方法 |
| US6664566B1 (en) | 1982-08-24 | 2003-12-16 | Semiconductor Energy Laboratory Co., Ltd. | Photoelectric conversion device and method of making the same |
| USRE37441E1 (en) | 1982-08-24 | 2001-11-13 | Semiconductor Energy Laboratory Co., Ltd. | Photoelectric conversion device |
| USRE38727E1 (en) | 1982-08-24 | 2005-04-19 | Semiconductor Energy Laboratory Co., Ltd. | Photoelectric conversion device and method of making the same |
| JPS5941470A (ja) * | 1982-08-31 | 1984-03-07 | Shimadzu Corp | 多室形薄膜作成装置 |
| JPS5952835A (ja) * | 1982-09-20 | 1984-03-27 | Semiconductor Energy Lab Co Ltd | プラズマ気相反応装置 |
| JPS5958820A (ja) * | 1982-09-28 | 1984-04-04 | Matsushita Electronics Corp | 気相エピタキシヤル成長装置 |
| US4515107A (en) * | 1982-11-12 | 1985-05-07 | Sovonics Solar Systems | Apparatus for the manufacture of photovoltaic devices |
| JPS59167012A (ja) * | 1983-03-12 | 1984-09-20 | Agency Of Ind Science & Technol | プラズマｃｖｄ装置 |
| JPS59167013A (ja) * | 1983-03-12 | 1984-09-20 | Agency Of Ind Science & Technol | プラズマｃｖｄ装置 |
| JPS58190810A (ja) * | 1983-03-16 | 1983-11-07 | Yoshihiro Hamakawa | Ｐ型アモルフアスシリコンカ−バイドの製造方法 |
| JPS6010681A (ja) * | 1983-06-30 | 1985-01-19 | Canon Inc | 光電変換部材の製造装置 |
| JPS60131970A (ja) * | 1983-12-20 | 1985-07-13 | Canon Inc | 堆積膜形成法 |
| JPH0766911B2 (ja) * | 1985-11-18 | 1995-07-19 | 株式会社半導体エネルギー研究所 | 被膜形成方法 |
| JP2654433B2 (ja) * | 1985-11-12 | 1997-09-17 | 株式会社 半導体エネルギー研究所 | 珪素半導体作製方法 |
| US5780313A (en) * | 1985-02-14 | 1998-07-14 | Semiconductor Energy Laboratory Co., Ltd. | Method of fabricating semiconductor device |
| US4727044A (en) | 1984-05-18 | 1988-02-23 | Semiconductor Energy Laboratory Co., Ltd. | Method of making a thin film transistor with laser recrystallized source and drain |
| JPS6123760A (ja) * | 1984-07-09 | 1986-02-01 | Canon Inc | 電子写真感光体の製造方法 |
| US7038238B1 (en) | 1985-05-07 | 2006-05-02 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device having a non-single crystalline semiconductor layer |
| JPS62167885A (ja) * | 1986-11-19 | 1987-07-24 | Semiconductor Energy Lab Co Ltd | 炭素被膜を有する複合体の作製方法 |
| JPH01157520A (ja) * | 1988-11-18 | 1989-06-20 | Semiconductor Energy Lab Co Ltd | プラズマ気相反応方法 |
| JPH02283078A (ja) * | 1989-05-15 | 1990-11-20 | Semiconductor Energy Lab Co Ltd | 発光素子 |
| JP2704569B2 (ja) * | 1991-06-28 | 1998-01-26 | 株式会社半導体エネルギー研究所 | 半導体装置作製方法 |
| JPH05251356A (ja) * | 1991-11-06 | 1993-09-28 | Semiconductor Energy Lab Co Ltd | 被膜形成方法 |
| JPH05304096A (ja) * | 1991-11-06 | 1993-11-16 | Semiconductor Energy Lab Co Ltd | 半導体装置作製方法 |
| JPH05343714A (ja) * | 1991-12-24 | 1993-12-24 | Kanegafuchi Chem Ind Co Ltd | アモルフアスシリコン系光電素子の製造方法 |
| JP2530408B2 (ja) * | 1992-05-06 | 1996-09-04 | 鐘淵化学工業 株式会社 | アモルフアスシリコン系光電素子の製造方法 |
| JP2673766B2 (ja) * | 1992-08-25 | 1997-11-05 | 株式会社半導体エネルギー研究所 | 炭素を主成分とする材料の作製方法 |
| JP2592392B2 (ja) * | 1993-03-30 | 1997-03-19 | 株式会社 半導体エネルギー研究所 | 珪素を含む炭素被膜の作製方法 |
| JP2626705B2 (ja) * | 1994-07-25 | 1997-07-02 | 株式会社 半導体エネルギー研究所 | 被膜作製方法 |
| JPH0812848B2 (ja) * | 1994-07-25 | 1996-02-07 | 株式会社半導体エネルギー研究所 | 半導体装置製造方法 |
| JP5025591B2 (ja) * | 2008-08-08 | 2012-09-12 | 親夫 木村 | 薄膜半導体層の形成方法 |
-
1978
- 1978-12-10 JP JP15288778A patent/JPS5578524A/ja active Granted
Non-Patent Citations (2)
| Title |
|---|
| APPLIED PHYSICS LETTERS=1978 * |
| PHILOS MAG=1977 * |
Also Published As
| Publication number | Publication date |
|---|---|
| JPS5578524A (en) | 1980-06-13 |
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