JPS6235267B2 - - Google Patents
Info
- Publication number
- JPS6235267B2 JPS6235267B2 JP8682480A JP8682480A JPS6235267B2 JP S6235267 B2 JPS6235267 B2 JP S6235267B2 JP 8682480 A JP8682480 A JP 8682480A JP 8682480 A JP8682480 A JP 8682480A JP S6235267 B2 JPS6235267 B2 JP S6235267B2
- Authority
- JP
- Japan
- Prior art keywords
- groove
- film
- etching
- semiconductor device
- silicon dioxide
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/76—Making of isolation regions between components
- H01L21/762—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers
- H01L21/76224—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using trench refilling with dielectric materials
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Local Oxidation Of Silicon (AREA)
- Element Separation (AREA)
- Formation Of Insulating Films (AREA)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP8682480A JPS5712533A (en) | 1980-06-26 | 1980-06-26 | Manufacture of semiconductor device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP8682480A JPS5712533A (en) | 1980-06-26 | 1980-06-26 | Manufacture of semiconductor device |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS5712533A JPS5712533A (en) | 1982-01-22 |
JPS6235267B2 true JPS6235267B2 (enrdf_load_stackoverflow) | 1987-07-31 |
Family
ID=13897550
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP8682480A Granted JPS5712533A (en) | 1980-06-26 | 1980-06-26 | Manufacture of semiconductor device |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS5712533A (enrdf_load_stackoverflow) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE102021213701A1 (de) | 2021-12-02 | 2023-06-07 | Robert Bosch Gesellschaft mit beschränkter Haftung | Kontrollsystem und Verfahren zur Kontrolle der Position eines mobilen Endgeräts mittels eines Kontrollsystems |
Families Citing this family (18)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5743438A (en) * | 1980-08-29 | 1982-03-11 | Toshiba Corp | Semiconductor device and manufacture thereof |
JPS589333A (ja) * | 1981-07-08 | 1983-01-19 | Hitachi Ltd | 半導体装置 |
US4506435A (en) * | 1981-07-27 | 1985-03-26 | International Business Machines Corporation | Method for forming recessed isolated regions |
JPS5955033A (ja) * | 1982-09-22 | 1984-03-29 | Fujitsu Ltd | 素子間分離膜の形成方法 |
JPS59106133A (ja) * | 1982-12-09 | 1984-06-19 | Nec Corp | 集積回路装置 |
JPS59119848A (ja) * | 1982-12-27 | 1984-07-11 | Fujitsu Ltd | 半導体装置の製造方法 |
JPS6043843A (ja) * | 1983-08-19 | 1985-03-08 | Nec Corp | 半導体装置の製造方法 |
JPS60111436A (ja) * | 1983-11-22 | 1985-06-17 | Toshiba Corp | 半導体装置の製造方法 |
JPS60170951A (ja) * | 1984-02-16 | 1985-09-04 | Nec Corp | 素子分離方法 |
US4729815A (en) * | 1986-07-21 | 1988-03-08 | Motorola, Inc. | Multiple step trench etching process |
JP2554635B2 (ja) * | 1986-09-30 | 1996-11-13 | 株式会社東芝 | 半導体装置の製造方法 |
JPS6392045A (ja) * | 1986-10-06 | 1988-04-22 | Toshiba Corp | 半導体装置の製造方法 |
JP2635607B2 (ja) * | 1987-08-28 | 1997-07-30 | 株式会社東芝 | 半導体装置の製造方法 |
US4952524A (en) * | 1989-05-05 | 1990-08-28 | At&T Bell Laboratories | Semiconductor device manufacture including trench formation |
JP2667552B2 (ja) * | 1990-05-28 | 1997-10-27 | 株式会社東芝 | 半導体装置の製造方法 |
KR960006714B1 (ko) * | 1990-05-28 | 1996-05-22 | 가부시끼가이샤 도시바 | 반도체 장치의 제조 방법 |
US6077786A (en) * | 1997-05-08 | 2000-06-20 | International Business Machines Corporation | Methods and apparatus for filling high aspect ratio structures with silicate glass |
KR100392894B1 (ko) * | 2000-12-27 | 2003-07-28 | 동부전자 주식회사 | 반도체 소자의 트렌치 형성 방법 |
-
1980
- 1980-06-26 JP JP8682480A patent/JPS5712533A/ja active Granted
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE102021213701A1 (de) | 2021-12-02 | 2023-06-07 | Robert Bosch Gesellschaft mit beschränkter Haftung | Kontrollsystem und Verfahren zur Kontrolle der Position eines mobilen Endgeräts mittels eines Kontrollsystems |
WO2023099369A1 (de) | 2021-12-02 | 2023-06-08 | Robert Bosch Gmbh | Kontrollsystem und verfahren zur kontrolle der position eines mobilen endgeräts mittels eines kontrollsystems |
Also Published As
Publication number | Publication date |
---|---|
JPS5712533A (en) | 1982-01-22 |
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