JPS5712533A - Manufacture of semiconductor device - Google Patents

Manufacture of semiconductor device

Info

Publication number
JPS5712533A
JPS5712533A JP8682480A JP8682480A JPS5712533A JP S5712533 A JPS5712533 A JP S5712533A JP 8682480 A JP8682480 A JP 8682480A JP 8682480 A JP8682480 A JP 8682480A JP S5712533 A JPS5712533 A JP S5712533A
Authority
JP
Japan
Prior art keywords
groove
glass
psg
substrate
covering
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP8682480A
Other languages
Japanese (ja)
Other versions
JPS6235267B2 (en
Inventor
Junji Sakurai
Hajime Kamioka
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP8682480A priority Critical patent/JPS5712533A/en
Publication of JPS5712533A publication Critical patent/JPS5712533A/en
Publication of JPS6235267B2 publication Critical patent/JPS6235267B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/76—Making of isolation regions between components
    • H01L21/762—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers
    • H01L21/76224—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using trench refilling with dielectric materials

Abstract

PURPOSE:To charge a groove with glass densely, by chamferring corner of the groove wall provided vertically on a substrate, covering it with an insulating film and thus repeating covering and melting of glass membrane. CONSTITUTION:A vertically etched groove 12 is formed on an Si substrate 11 by electron beam, etc. and corner section of the surface is chamferred 12' by executing isotropic plasma etching. It is covered b a thermal oxide coating 13, PSG14 is laminated by CVD process and heat-treated at 1,100 deg.C for approximately 30min. PSC melts and flows into the groove to fill a part of vacancy. When PSG growth and melting processes are repeated, inside of the groove is densely filled with PSG making the surface flat, and therefore,it becomes possible to obtain a device of high reliability without causing any cavity to glass in the groove.
JP8682480A 1980-06-26 1980-06-26 Manufacture of semiconductor device Granted JPS5712533A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP8682480A JPS5712533A (en) 1980-06-26 1980-06-26 Manufacture of semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP8682480A JPS5712533A (en) 1980-06-26 1980-06-26 Manufacture of semiconductor device

Publications (2)

Publication Number Publication Date
JPS5712533A true JPS5712533A (en) 1982-01-22
JPS6235267B2 JPS6235267B2 (en) 1987-07-31

Family

ID=13897550

Family Applications (1)

Application Number Title Priority Date Filing Date
JP8682480A Granted JPS5712533A (en) 1980-06-26 1980-06-26 Manufacture of semiconductor device

Country Status (1)

Country Link
JP (1) JPS5712533A (en)

Cited By (19)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5743438A (en) * 1980-08-29 1982-03-11 Toshiba Corp Semiconductor device and manufacture thereof
JPS589333A (en) * 1981-07-08 1983-01-19 Hitachi Ltd Semiconductor device
EP0071205A2 (en) * 1981-07-27 1983-02-09 International Business Machines Corporation Method for forming high density dielectric isolation
EP0071204A2 (en) * 1981-07-27 1983-02-09 International Business Machines Corporation Method for forming recessed dielectric isolation
JPS5955033A (en) * 1982-09-22 1984-03-29 Fujitsu Ltd Formation of interelement isolating film
JPS59106133A (en) * 1982-12-09 1984-06-19 Nec Corp Integrated circuit device
JPS6043843A (en) * 1983-08-19 1985-03-08 Nec Corp Semiconductor device having dielectric isolating region
JPS60111436A (en) * 1983-11-22 1985-06-17 Toshiba Corp Manufacture of semiconductor device
JPS60170951A (en) * 1984-02-16 1985-09-04 Nec Corp Element isolating method
US4611386A (en) * 1982-12-27 1986-09-16 Fujitsu Limited Method of producing a semiconductor device
US4729815A (en) * 1986-07-21 1988-03-08 Motorola, Inc. Multiple step trench etching process
JPS6386449A (en) * 1986-09-30 1988-04-16 Toshiba Corp Manufacture of semiconductor device
JPS6392045A (en) * 1986-10-06 1988-04-22 Toshiba Corp Manufacture of semiconductor device
DE3829015A1 (en) * 1987-08-28 1989-04-06 Toshiba Kawasaki Kk Method for producing a semiconductor
US4952524A (en) * 1989-05-05 1990-08-28 At&T Bell Laboratories Semiconductor device manufacture including trench formation
JPH0430557A (en) * 1990-05-28 1992-02-03 Toshiba Corp Semiconductor device and manufacture thereof
US5858859A (en) * 1990-05-28 1999-01-12 Kabushiki Kaisha Toshiba Semiconductor device having a trench for device isolation fabrication method
US6077786A (en) * 1997-05-08 2000-06-20 International Business Machines Corporation Methods and apparatus for filling high aspect ratio structures with silicate glass
KR100392894B1 (en) * 2000-12-27 2003-07-28 동부전자 주식회사 Method for forming trench of semiconductor element

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE102021213701A1 (en) 2021-12-02 2023-06-07 Robert Bosch Gesellschaft mit beschränkter Haftung Control system and method for controlling the position of a mobile device using a control system

Cited By (24)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5743438A (en) * 1980-08-29 1982-03-11 Toshiba Corp Semiconductor device and manufacture thereof
JPH0158661B2 (en) * 1980-08-29 1989-12-13 Tokyo Shibaura Electric Co
JPS589333A (en) * 1981-07-08 1983-01-19 Hitachi Ltd Semiconductor device
EP0071205A2 (en) * 1981-07-27 1983-02-09 International Business Machines Corporation Method for forming high density dielectric isolation
EP0071204A2 (en) * 1981-07-27 1983-02-09 International Business Machines Corporation Method for forming recessed dielectric isolation
JPS5827342A (en) * 1981-07-27 1983-02-18 インタ−ナシヨナル・ビジネス・マシ−ンズ・コ−ポレ−シヨン Method of forming dielectric isolation region
JPH046093B2 (en) * 1981-07-27 1992-02-04 Intaanashonaru Bijinesu Mashiinzu Corp
JPS5955033A (en) * 1982-09-22 1984-03-29 Fujitsu Ltd Formation of interelement isolating film
JPS6325708B2 (en) * 1982-12-09 1988-05-26 Nippon Electric Co
JPS59106133A (en) * 1982-12-09 1984-06-19 Nec Corp Integrated circuit device
US4611386A (en) * 1982-12-27 1986-09-16 Fujitsu Limited Method of producing a semiconductor device
JPH033948B2 (en) * 1983-08-19 1991-01-21 Nippon Electric Co
JPS6043843A (en) * 1983-08-19 1985-03-08 Nec Corp Semiconductor device having dielectric isolating region
JPS60111436A (en) * 1983-11-22 1985-06-17 Toshiba Corp Manufacture of semiconductor device
JPS60170951A (en) * 1984-02-16 1985-09-04 Nec Corp Element isolating method
US4729815A (en) * 1986-07-21 1988-03-08 Motorola, Inc. Multiple step trench etching process
JPS6386449A (en) * 1986-09-30 1988-04-16 Toshiba Corp Manufacture of semiconductor device
JPS6392045A (en) * 1986-10-06 1988-04-22 Toshiba Corp Manufacture of semiconductor device
DE3829015A1 (en) * 1987-08-28 1989-04-06 Toshiba Kawasaki Kk Method for producing a semiconductor
US4952524A (en) * 1989-05-05 1990-08-28 At&T Bell Laboratories Semiconductor device manufacture including trench formation
JPH0430557A (en) * 1990-05-28 1992-02-03 Toshiba Corp Semiconductor device and manufacture thereof
US5858859A (en) * 1990-05-28 1999-01-12 Kabushiki Kaisha Toshiba Semiconductor device having a trench for device isolation fabrication method
US6077786A (en) * 1997-05-08 2000-06-20 International Business Machines Corporation Methods and apparatus for filling high aspect ratio structures with silicate glass
KR100392894B1 (en) * 2000-12-27 2003-07-28 동부전자 주식회사 Method for forming trench of semiconductor element

Also Published As

Publication number Publication date
JPS6235267B2 (en) 1987-07-31

Similar Documents

Publication Publication Date Title
JPS5712533A (en) Manufacture of semiconductor device
EP0084635B1 (en) Method of forming a wide deep dielectric filled isolation trench in the surface of a silicon semiconductor substrate
JPS5690525A (en) Manufacture of semiconductor device
JPS56114319A (en) Method for forming contact hole
SE457179B (en) PROCEDURES FOR PREPARING A TEMPING OPENING IN A PASSIVATING GLASS COVER ORGANIZED ABOVE THE SURFACE OF A SEMICONDUCTOR
JPS5772321A (en) Manufacture of seiconductor device
JPS57186339A (en) Etching method for silicon
JPS57143845A (en) Formation of multi-layer wiring composition
JPS57176005A (en) Manufacture of optical waveguide circuit
JPS5756942A (en) Manufacture of silicon semiconductor device
JPS56131948A (en) Manufacture of semiconductor element
JPS57126185A (en) Manufacture of josephson element
JPS5772346A (en) Manufacture of semiconductor device
JPS5790942A (en) Manufacture of semiconductor element
JPS5613733A (en) Forming method for electrode
JPH06326076A (en) Formation method of thin film
JPS5715423A (en) Manufacture of semiconductor device
JPS56146254A (en) Manufacture of semiconductor device
CN117658478A (en) All-glass atomic gas chamber and preparation method thereof
JPS5578546A (en) Manufacture of semiconductor
JPS57204135A (en) Manufacture of semiconductor device
JPS57113247A (en) Manufacture of semiconductor device
JPS551129A (en) Manufacture of semiconductor device
JPS55107244A (en) Manufacture of semiconductor device
JPS57161704A (en) Manufacture of integrated optical circuit