JPS6135714B2 - - Google Patents

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Publication number
JPS6135714B2
JPS6135714B2 JP54014099A JP1409979A JPS6135714B2 JP S6135714 B2 JPS6135714 B2 JP S6135714B2 JP 54014099 A JP54014099 A JP 54014099A JP 1409979 A JP1409979 A JP 1409979A JP S6135714 B2 JPS6135714 B2 JP S6135714B2
Authority
JP
Japan
Prior art keywords
electrode
pad
gate electrode
bonding pad
semiconductor device
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP54014099A
Other languages
English (en)
Other versions
JPS55108775A (en
Inventor
Yutaka Hirano
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP1409979A priority Critical patent/JPS55108775A/ja
Priority to EP80300256A priority patent/EP0015072B1/en
Priority to DE8080300256T priority patent/DE3063218D1/de
Priority to US06/118,225 priority patent/US4298879A/en
Publication of JPS55108775A publication Critical patent/JPS55108775A/ja
Publication of JPS6135714B2 publication Critical patent/JPS6135714B2/ja
Granted legal-status Critical Current

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    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/26Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L24/31Structure, shape, material or disposition of the layer connectors after the connecting process
    • H01L24/32Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
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    • H01L29/00Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/40Electrodes ; Multistep manufacturing processes therefor
    • H01L29/41Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
    • H01L29/423Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions not carrying the current to be rectified, amplified or switched
    • H01L29/42312Gate electrodes for field effect devices
    • H01L29/42316Gate electrodes for field effect devices for field-effect transistors
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    • H01L29/40Electrodes ; Multistep manufacturing processes therefor
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    • H01L29/42312Gate electrodes for field effect devices
    • H01L29/42316Gate electrodes for field effect devices for field-effect transistors
    • H01L29/4232Gate electrodes for field effect devices for field-effect transistors with insulated gate
    • H01L29/42372Gate electrodes for field effect devices for field-effect transistors with insulated gate characterised by the conducting layer, e.g. the length, the sectional shape or the lay-out
    • H01L29/4238Gate electrodes for field effect devices for field-effect transistors with insulated gate characterised by the conducting layer, e.g. the length, the sectional shape or the lay-out characterised by the surface lay-out
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    • H01L29/68Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76Unipolar devices, e.g. field effect transistors
    • H01L29/772Field effect transistors
    • H01L29/80Field effect transistors with field effect produced by a PN or other rectifying junction gate, i.e. potential-jump barrier
    • H01L29/812Field effect transistors with field effect produced by a PN or other rectifying junction gate, i.e. potential-jump barrier with a Schottky gate
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    • H01L2224/29001Core members of the layer connector
    • H01L2224/29099Material
    • H01L2224/291Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
    • H01L2224/29101Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of less than 400°C
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    • H01L2224/484Connecting portions
    • H01L2224/4847Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a wedge bond
    • H01L2224/48472Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a wedge bond the other connecting portion not on the bonding area also being a wedge bond, i.e. wedge-to-wedge
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    • H01L2224/732Location after the connecting process
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  • Engineering & Computer Science (AREA)
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  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Junction Field-Effect Transistors (AREA)
  • Electrodes Of Semiconductors (AREA)

Description

【発明の詳細な説明】 本発明は、GaAs・FET(GaAs電界効果トラ
ンジスタ)のような半導体装置の改良に関する。
従来、GaAs.FETは4〔GHz〕から18〔GHz〕
近辺までの高周波増幅、発振などを行なう装置と
して多用され、近年は益々大出力化される傾向に
ある。大出力化するにはゲート幅を大にする必要
があり、また、第1図に見られるような櫛歯形構
造を採つている。
第1図に於いて、1はメサ型能動領域、2はソ
ース電極、2Aはソース・コンタクト窓、3はド
レイン電極、3Aはドレイン・コンタクト窓、4
はゲート電極をそれぞれ示す。
第2図は第1図の線A―A′に於ける断面図、
第3図は同じく線B―B′に於ける断面図、第4図
は同じく線C―C′に於ける断面図であり、第1
図に関して説明した部分と同部分を同記号で指示
してある。
図に於いて、11は半絶縁性単結晶基板、12
はバツフア層、13はGaAs動作層、14は二酸
化シリコンの絶縁層をそれぞれ示す。
さて、このような半導体装置を使用可能な状態
にするには第5図に見られるようなシート接地法
に依りパツケージに実装する手法が採られる。
第5図に於いて、21は電源の接地側母線、、
22はL字形金シート、23は金・錫のソルダ、
24は半導体チツプ、25はドレイン・リードの
接続領域、26はゲート・リードの接続領域であ
る。尚、金シート22は図に表われている起立し
た部分と、金・錫ソルダ23で覆われて見えない
平面部分とからなるL字形をなしている。
通常、この種のFETはソース接地の状態で使
用され、従つて、ソース・インダクタンスを減少
させないと良好な高周波特性を期待できない。そ
こで、第5図に見られる実装方法が採られている
のである。この方法に依るとソースは最短距離
で、しかも、大面積で接地されるのでソース・イ
ンダクタンスは大幅に低減される。
ところで、半導体チツプ24の表面で金・錫ソ
ルダ23が付着する部分は第1図で見た場合、ソ
ース・コンタクト窓2Aの下方エツジ部分、即
ち、ゲート電極4のボンデイング・パツドより下
方の部分に金・錫ソルダが被着されるものである
が、この接地部分とFETとして活性な部分との
距離は出来る限り短縮することが望ましいが、従
来の装置では250〔μm〕程度が一般的であり、
その為に電力利得が充分にとれない、特に大出力
のFET、例えばゲート幅20〔mm〕のものでは8
〔GHz〕で約1〔dB〕の電力利得しか得られな
い。一般に、ゲート幅が大きくなればなる程、接
地端のインダクタンスを小さくしなければならな
い。
前記したところから明らかなように、FETの
特性を改善するには、接地部分と活性部分との間
の距間を短かくする必要があるけれども、第1図
から明らかなように、その距離を規定する要因と
なつているのはゲート電極4に於けるボンデイン
グ・パツドの部分である。
本発明は、前記のようなFETに於けるゲート
電極のボンデイング・パツド部分及びソース電極
を改善し、前記した接地部分と活性部分の間の距
離を短縮してインダクタンスを更に減少させ、高
周波大出力を取り出し得るように、また、ゲート
電極外部リード引出し用パツドとドレイン電極の
ボンデイング・パツドとの間に接地されるソース
電極の一部を介在させて入出力を分離し、高周波
の漏れに依る発振を防止するようにしたものであ
り、以下、これを説明する。
第6図は本発明一実施例の要部平面図、第7図
は第6図の線D―D′に於ける断面図であり、第
1図乃至第4図に関して説明した部分と同部分を
同記号で指示してある。
本発明実施例が従来例と相違する点はメサ型能
動領域が1A,1Bの二つに分割され、その間に
形成された空所にゲート電極4のボンデイング・
パツド4′を配設したことである。
このような構成にすると、ボンデイング・パツ
ド4′は櫛歯形構造の部分から張出さないから、
活性部分と接地部分との間の距離を著しく短かく
することができ、従来の構造で250〜350〔μm〕
であつたものを150〔μm〕以下にすることがで
きた。
さて、一般に、この種FETではゲートが入
力、ドレインが出力になつている。従つて、ゲー
ト電極のボンデイング・パツドとドレイン電極の
ボンデイング・パツドが接近した場合、そのまま
では発振する惧れがある。しかしながら、前記実
施例ではドレイン電極3のボンデイング・パツド
とゲート電極4のボンデイング・パッド4′との
間にはソース電極2の一部が介在しているので、
入出力間に高周波信号の漏れを生ずることは殆ん
どなく発振は生じない。
以上の説明で判るように、本発明装置に依れ
ば、ゲート電極のボンデイング・パツド、即ち、
外部リード引出し用パツドが、複数に分割された
活性動作部分の間に生じた空所に配置された構成
になつているので、接地部分と活性動作部分との
間の距離を著しく短縮することができ、また、ソ
ース電極は、その一部がチツプのエツジに沿つて
延在し且つ一部が前記ゲート電極外部リード引出
し用パツドとドレイン電極のボンデイング・パツ
ドとの間に介在した構成になつているので、第5
図に見られる構成を採るか或いはチツプ側面にメ
タライズ層を形成した構成にして接地する場合に
有利であり、また、ソース電極は接地されるもの
であるから、前記構成に依り、入出力間、即ち、
ゲート電極外部リード引出し用パツドとドレイン
電極のボンデイング・パツド間が分離され、それ
等の間に高周波の漏れが発生せず、従つて、無用
な発振が生ずることはなくなる。
このようなことから、接地インダクタンスは減
少し、利得は2〔dB〕以上も大になり、安定指
数も改善される。
【図面の簡単な説明】
第1図は従来例の平面図、第2図乃至第4図は
第1図の要所に於ける断面図、第5図は半導体チ
ツプの実装状態を説明する斜視図、第6図は本発
明一実施例の要部平面図、第7図は第6図の線D
―D′に於ける断面図である。 図に於いて、1,1A,1Bはメサ型能動領
域、2はソース電極、2Aはソース・コンタクト
窓、3はドレイン電極、3Aはドレイン・コンタ
クト窓、4はゲート電極、4′はボンデイング・
パツドである。

Claims (1)

    【特許請求の範囲】
  1. 1 櫛型電極構造を有し、且つ、接地される電極
    とグラウンドとの間を半導体チツプ側面を経由し
    て電気的に接続する半導体装置に於いて、複数個
    に分割された活性動作部分と、それ等活性動作部
    分の間の空間に形成されたゲート電極外部リード
    引出し用パツドと、一部が前記櫛型電極の配列方
    向に沿うと共に前記半導体チツプのエツジにも沿
    つて延在し且つ一部が前記ゲート電極外部リード
    引出し用パツドとドレイン電極のボンデイング・
    バツドとの間に介在して入出力を分離しているソ
    ース電極とを有してなることを特徴とする半導体
    装置。
JP1409979A 1979-02-09 1979-02-09 Semiconductor device Granted JPS55108775A (en)

Priority Applications (4)

Application Number Priority Date Filing Date Title
JP1409979A JPS55108775A (en) 1979-02-09 1979-02-09 Semiconductor device
EP80300256A EP0015072B1 (en) 1979-02-09 1980-01-29 A field effect transistor
DE8080300256T DE3063218D1 (en) 1979-02-09 1980-01-29 A field effect transistor
US06/118,225 US4298879A (en) 1979-02-09 1980-02-04 Field effect transistor

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP1409979A JPS55108775A (en) 1979-02-09 1979-02-09 Semiconductor device

Publications (2)

Publication Number Publication Date
JPS55108775A JPS55108775A (en) 1980-08-21
JPS6135714B2 true JPS6135714B2 (ja) 1986-08-14

Family

ID=11851660

Family Applications (1)

Application Number Title Priority Date Filing Date
JP1409979A Granted JPS55108775A (en) 1979-02-09 1979-02-09 Semiconductor device

Country Status (4)

Country Link
US (1) US4298879A (ja)
EP (1) EP0015072B1 (ja)
JP (1) JPS55108775A (ja)
DE (1) DE3063218D1 (ja)

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JP2010098243A (ja) * 2008-10-20 2010-04-30 Renesas Technology Corp 半導体装置

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JPS57117276A (en) * 1981-01-14 1982-07-21 Hitachi Ltd Semiconductor device
CA1200017A (en) * 1981-12-04 1986-01-28 Ho C. Huang Microwave field effect transistor
US4684965A (en) * 1983-05-09 1987-08-04 Raytheon Company Monolithic programmable attenuator
US4587541A (en) * 1983-07-28 1986-05-06 Cornell Research Foundation, Inc. Monolithic coplanar waveguide travelling wave transistor amplifier
DE3578533D1 (de) * 1984-04-28 1990-08-09 Sony Corp Halbleiterbauelement mit von source- und/oder drain-gebieten umgebenen anschlussflaechen.
JPS6276568A (ja) * 1985-09-28 1987-04-08 Sharp Corp 電界効果トランジスタ
JPH0770733B2 (ja) * 1988-02-22 1995-07-31 株式会社東芝 半導体装置とその使用方法
US4870478A (en) * 1988-04-21 1989-09-26 Motorola, Inc. Dual-gate gallium arsenide power metal semiconductor field effect transistor
US5023677A (en) * 1990-05-02 1991-06-11 Texas Instruments Incorporated Low parasitic FET topology for power and low noise GaAs FETs
JPH04252036A (ja) * 1991-01-10 1992-09-08 Fujitsu Ltd 半導体装置
US5199136A (en) * 1991-05-16 1993-04-06 Coors Ceramicon Designs, Ltd. Button for articles of clothing
JP2637937B2 (ja) * 1995-01-30 1997-08-06 関西日本電気株式会社 電界効果トランジスタの製造方法
JP3189691B2 (ja) * 1996-07-10 2001-07-16 株式会社村田製作所 高周波半導体デバイス
JPH11136111A (ja) * 1997-10-30 1999-05-21 Sony Corp 高周波回路
US6774416B2 (en) * 2001-07-16 2004-08-10 Nanowave, Inc Small area cascode FET structure operating at mm-wave frequencies
FR2911005B1 (fr) * 2006-12-27 2009-06-12 St Microelectronics Sa Transistor mos adapte a la tenue de forts courants

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JPS5192185A (ja) * 1975-02-10 1976-08-12

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US3969745A (en) * 1974-09-18 1976-07-13 Texas Instruments Incorporated Interconnection in multi element planar structures
US3986196A (en) * 1975-06-30 1976-10-12 Varian Associates Through-substrate source contact for microwave FET
US4141021A (en) * 1977-02-14 1979-02-20 Varian Associates, Inc. Field effect transistor having source and gate electrodes on opposite faces of active layer

Patent Citations (1)

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Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2010098243A (ja) * 2008-10-20 2010-04-30 Renesas Technology Corp 半導体装置

Also Published As

Publication number Publication date
EP0015072B1 (en) 1983-05-18
DE3063218D1 (en) 1983-07-07
JPS55108775A (en) 1980-08-21
US4298879A (en) 1981-11-03
EP0015072A1 (en) 1980-09-03

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