JPS6129820A - アクテイプマトリクス表示装置用基板 - Google Patents
アクテイプマトリクス表示装置用基板Info
- Publication number
- JPS6129820A JPS6129820A JP15255684A JP15255684A JPS6129820A JP S6129820 A JPS6129820 A JP S6129820A JP 15255684 A JP15255684 A JP 15255684A JP 15255684 A JP15255684 A JP 15255684A JP S6129820 A JPS6129820 A JP S6129820A
- Authority
- JP
- Japan
- Prior art keywords
- gate
- wiring
- conductive film
- electrode
- gate wiring
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000000758 substrate Substances 0.000 title claims description 9
- 239000011159 matrix material Substances 0.000 title claims description 8
- 239000010408 film Substances 0.000 claims abstract description 37
- 239000010409 thin film Substances 0.000 claims abstract description 10
- 239000003990 capacitor Substances 0.000 claims description 8
- 230000007423 decrease Effects 0.000 abstract description 5
- 239000002184 metal Substances 0.000 abstract description 4
- 229910021332 silicide Inorganic materials 0.000 abstract description 2
- FVBUAEGBCNSCDD-UHFFFAOYSA-N silicide(4-) Chemical compound [Si-4] FVBUAEGBCNSCDD-UHFFFAOYSA-N 0.000 abstract description 2
- XOLBLPGZBRYERU-UHFFFAOYSA-N tin dioxide Chemical compound O=[Sn]=O XOLBLPGZBRYERU-UHFFFAOYSA-N 0.000 abstract 2
- 238000000034 method Methods 0.000 description 6
- 239000004065 semiconductor Substances 0.000 description 5
- 238000004519 manufacturing process Methods 0.000 description 4
- 230000007547 defect Effects 0.000 description 2
- 230000002950 deficient Effects 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 239000004973 liquid crystal related substance Substances 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 229910021417 amorphous silicon Inorganic materials 0.000 description 1
- 238000000137 annealing Methods 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- 238000002161 passivation Methods 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
Classifications
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
- G02F1/1362—Active matrix addressed cells
- G02F1/136286—Wiring, e.g. gate line, drain line
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/1333—Constructional arrangements; Manufacturing methods
- G02F1/1335—Structural association of cells with optical devices, e.g. polarisers or reflectors
- G02F1/133509—Filters, e.g. light shielding masks
- G02F1/133512—Light shielding layers, e.g. black matrix
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
- G02F1/1362—Active matrix addressed cells
- G02F1/136213—Storage capacitors associated with the pixel electrode
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
- G02F1/1362—Active matrix addressed cells
- G02F1/136259—Repairing; Defects
- G02F1/136263—Line defects
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
- G02F1/1362—Active matrix addressed cells
- G02F1/136286—Wiring, e.g. gate line, drain line
- G02F1/13629—Multilayer wirings
Landscapes
- Physics & Mathematics (AREA)
- Nonlinear Science (AREA)
- Liquid Crystal (AREA)
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Mathematical Physics (AREA)
- Chemical & Material Sciences (AREA)
- Crystallography & Structural Chemistry (AREA)
- General Physics & Mathematics (AREA)
- Optics & Photonics (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP15255684A JPS6129820A (ja) | 1984-07-23 | 1984-07-23 | アクテイプマトリクス表示装置用基板 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP15255684A JPS6129820A (ja) | 1984-07-23 | 1984-07-23 | アクテイプマトリクス表示装置用基板 |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS6129820A true JPS6129820A (ja) | 1986-02-10 |
JPH0431376B2 JPH0431376B2 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) | 1992-05-26 |
Family
ID=15543050
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP15255684A Granted JPS6129820A (ja) | 1984-07-23 | 1984-07-23 | アクテイプマトリクス表示装置用基板 |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS6129820A (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) |
Cited By (13)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS62239580A (ja) * | 1986-04-10 | 1987-10-20 | Alps Electric Co Ltd | 薄膜トランジスタ |
JPS639977A (ja) * | 1986-07-01 | 1988-01-16 | Citizen Watch Co Ltd | 薄膜トランジスタ |
JPS63309923A (ja) * | 1987-06-10 | 1988-12-19 | Hitachi Ltd | 液晶表示装置 |
JPH01283517A (ja) * | 1988-05-10 | 1989-11-15 | Matsushita Electric Ind Co Ltd | マトリクス型画像表示装置用半導体装置およびその製造方法 |
JPH01283518A (ja) * | 1988-05-10 | 1989-11-15 | Matsushita Electric Ind Co Ltd | 画像表示装置用半導体およびその製造方法 |
JPH02250038A (ja) * | 1989-03-23 | 1990-10-05 | Seiko Instr Inc | 薄膜トランジスタアレイ |
JPH03141325A (ja) * | 1989-06-30 | 1991-06-17 | Sharp Corp | 液晶表示装置の製造方法 |
US5162901A (en) * | 1989-05-26 | 1992-11-10 | Sharp Kabushiki Kaisha | Active-matrix display device with added capacitance electrode wire and secondary wire connected thereto |
US5424857A (en) * | 1993-06-22 | 1995-06-13 | Asahi Glass Company Ltd. | Matrix-type display apparatus with conductor wire interconnecting capacitor electrodes |
US5708484A (en) * | 1987-06-10 | 1998-01-13 | Hitachi, Ltd. | TFT active matrix liquid crystal display devices with two layer gate lines, the first being the same level and material as gate electrodes |
US6667777B2 (en) | 2000-08-11 | 2003-12-23 | Nec Lcd Technologies, Ltd. | Liquid crystal display device and method for manufacturing the same |
JP2013537639A (ja) * | 2010-06-10 | 2013-10-03 | アップル インコーポレイテッド | カーテンムラを最小にしたディスプレイ |
JP2015084099A (ja) * | 2014-10-28 | 2015-04-30 | 株式会社半導体エネルギー研究所 | 半導体装置 |
-
1984
- 1984-07-23 JP JP15255684A patent/JPS6129820A/ja active Granted
Cited By (22)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS62239580A (ja) * | 1986-04-10 | 1987-10-20 | Alps Electric Co Ltd | 薄膜トランジスタ |
JPS639977A (ja) * | 1986-07-01 | 1988-01-16 | Citizen Watch Co Ltd | 薄膜トランジスタ |
US5708484A (en) * | 1987-06-10 | 1998-01-13 | Hitachi, Ltd. | TFT active matrix liquid crystal display devices with two layer gate lines, the first being the same level and material as gate electrodes |
JPS63309923A (ja) * | 1987-06-10 | 1988-12-19 | Hitachi Ltd | 液晶表示装置 |
US7450210B2 (en) | 1987-06-10 | 2008-11-11 | Hitachi, Ltd. | TFT active matrix liquid crystal display devices |
US7196762B2 (en) | 1987-06-10 | 2007-03-27 | Hitachi, Ltd. | TFT active matrix liquid crystal display devices |
US6992744B2 (en) | 1987-06-10 | 2006-01-31 | Hitachi, Ltd. | TFT active matrix liquid crystal display devices |
US6839098B2 (en) | 1987-06-10 | 2005-01-04 | Hitachi, Ltd. | TFT active matrix liquid crystal display devices |
US5838399A (en) * | 1987-06-10 | 1998-11-17 | Hitachi, Ltd. | TFT active matrix liquid crystal display devices with two layer gate lines, the first being the same level as gate electrodes. |
US6184963B1 (en) | 1987-06-10 | 2001-02-06 | Hitachi, Ltd. | TFT active matrix LCD devices employing two superposed conductive films having different dimensions for the scanning signal lines |
US6384879B2 (en) * | 1987-06-10 | 2002-05-07 | Hitachi, Ltd. | Liquid crystal display device including thin film transistors having gate electrodes completely covering the semiconductor |
JPH01283517A (ja) * | 1988-05-10 | 1989-11-15 | Matsushita Electric Ind Co Ltd | マトリクス型画像表示装置用半導体装置およびその製造方法 |
JPH01283518A (ja) * | 1988-05-10 | 1989-11-15 | Matsushita Electric Ind Co Ltd | 画像表示装置用半導体およびその製造方法 |
JPH02250038A (ja) * | 1989-03-23 | 1990-10-05 | Seiko Instr Inc | 薄膜トランジスタアレイ |
US5162901A (en) * | 1989-05-26 | 1992-11-10 | Sharp Kabushiki Kaisha | Active-matrix display device with added capacitance electrode wire and secondary wire connected thereto |
JPH03141325A (ja) * | 1989-06-30 | 1991-06-17 | Sharp Corp | 液晶表示装置の製造方法 |
US5424857A (en) * | 1993-06-22 | 1995-06-13 | Asahi Glass Company Ltd. | Matrix-type display apparatus with conductor wire interconnecting capacitor electrodes |
US6667777B2 (en) | 2000-08-11 | 2003-12-23 | Nec Lcd Technologies, Ltd. | Liquid crystal display device and method for manufacturing the same |
KR100485506B1 (ko) * | 2000-08-11 | 2005-04-28 | 엔이씨 엘씨디 테크놀로지스, 엘티디. | 액정 디스플레이 장치 및 그 제조 방법 |
JP2013537639A (ja) * | 2010-06-10 | 2013-10-03 | アップル インコーポレイテッド | カーテンムラを最小にしたディスプレイ |
US8836879B2 (en) | 2010-06-10 | 2014-09-16 | Apple Inc. | Displays with minimized curtain mura |
JP2015084099A (ja) * | 2014-10-28 | 2015-04-30 | 株式会社半導体エネルギー研究所 | 半導体装置 |
Also Published As
Publication number | Publication date |
---|---|
JPH0431376B2 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) | 1992-05-26 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
EXPY | Cancellation because of completion of term |