JPS5956276A - 半導体記憶装置 - Google Patents

半導体記憶装置

Info

Publication number
JPS5956276A
JPS5956276A JP57164830A JP16483082A JPS5956276A JP S5956276 A JPS5956276 A JP S5956276A JP 57164830 A JP57164830 A JP 57164830A JP 16483082 A JP16483082 A JP 16483082A JP S5956276 A JPS5956276 A JP S5956276A
Authority
JP
Japan
Prior art keywords
signal
address
internal
supplied
circuit
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP57164830A
Other languages
English (en)
Japanese (ja)
Other versions
JPH0442758B2 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html
Inventor
Hiroaki Kotani
博昭 小谷
Koji Shinoda
篠田　孝司
Kazumasa Yanagisawa
一正 柳沢
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP57164830A priority Critical patent/JPS5956276A/ja
Publication of JPS5956276A publication Critical patent/JPS5956276A/ja
Publication of JPH0442758B2 publication Critical patent/JPH0442758B2/ja
Granted legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C8/00—Arrangements for selecting an address in a digital store

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Static Random-Access Memory (AREA)
JP57164830A 1982-09-24 1982-09-24 半導体記憶装置 Granted JPS5956276A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP57164830A JPS5956276A (ja) 1982-09-24 1982-09-24 半導体記憶装置

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP57164830A JPS5956276A (ja) 1982-09-24 1982-09-24 半導体記憶装置

Publications (2)

Publication Number Publication Date
JPS5956276A true JPS5956276A (ja) 1984-03-31
JPH0442758B2 JPH0442758B2 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) 1992-07-14

Family

ID=15800732

Family Applications (1)

Application Number Title Priority Date Filing Date
JP57164830A Granted JPS5956276A (ja) 1982-09-24 1982-09-24 半導体記憶装置

Country Status (1)

Country Link
JP (1) JPS5956276A (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)

Cited By (30)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60206317A (ja) * 1984-03-13 1985-10-17 テ　アール　テ　テレコミュニカシオン　ラジオエレクトリック　エ　テレホニク データ処理装置
JPS61117789A (ja) * 1984-11-13 1986-06-05 Nec Corp 半導体メモリ
JPS61134989A (ja) * 1984-12-05 1986-06-23 Toshiba Corp ダイナミック型メモリ
JPS61139990A (ja) * 1984-12-10 1986-06-27 Nec Corp シリアルアクセスメモリ
JPS61253697A (ja) * 1985-05-07 1986-11-11 Hitachi Ltd ダイナミツク型ｒａｍ
JPS626482A (ja) * 1985-06-29 1987-01-13 Toshiba Corp 半導体記憶装置
JPS6251093A (ja) * 1985-08-30 1987-03-05 Hitachi Ltd 半導体記憶装置
JPS6298440A (ja) * 1985-09-30 1987-05-07 エスジーエス―トムソン　マイクロエレクトロニクス　インク． プログラマブルアクセスメモリ
JPS62117187A (ja) * 1985-11-15 1987-05-28 Mitsubishi Electric Corp ２ポ−ト半導体記憶装置
JPS62173689A (ja) * 1986-01-27 1987-07-30 Matsushita Electric Ind Co Ltd 記憶装置
JPS6313197A (ja) * 1986-07-03 1988-01-20 Nec Corp ダイナミツク型半導体記憶装置
JPS6314395A (ja) * 1986-07-04 1988-01-21 Nec Corp 記憶回路
JPS6346697A (ja) * 1986-08-13 1988-02-27 Hitachi Ltd 半導体メモリ
JPS63225997A (ja) * 1987-03-16 1988-09-20 Hitachi Ltd 半導体記憶装置
JPH01118287A (ja) * 1987-10-30 1989-05-10 Nec Corp 記憶回路
JPH01130240A (ja) * 1987-11-16 1989-05-23 Yokogawa Hewlett Packard Ltd データ列発生装置
JPH01207849A (ja) * 1988-02-16 1989-08-21 Mitsubishi Electric Corp メモリカード
JPH02128393A (ja) * 1987-10-29 1990-05-16 Texas Instr Inc <Ti> 直列制御回路を有するメモリ
JPH02257494A (ja) * 1988-01-28 1990-10-18 Natl Semiconductor Corp <Ns> ユーザが決定した開始アドレスを有する直列メモリの逐次的読取アクセス
JPH04228178A (ja) * 1990-09-20 1992-08-18 Sharp Corp 不揮発性ｄｒａｍ記憶装置におけるデータのページリコールのための装置と方法
JPH05114286A (ja) * 1982-09-29 1993-05-07 Texas Instr Inc <Ti> 電子装置
JPH06187779A (ja) * 1993-08-01 1994-07-08 Toshiba Corp 半導体記憶装置
JPH087568A (ja) * 1994-06-27 1996-01-12 Nec Corp ダイナミックｒａｍ
US5587962A (en) * 1987-12-23 1996-12-24 Texas Instruments Incorporated Memory circuit accommodating both serial and random access including an alternate address buffer register
US5587954A (en) * 1991-04-23 1996-12-24 Texas Instruments Incorporated Random access memory arranged for operating synchronously with a microprocessor and a system including a data processor, a synchronous DRAM, a peripheral device, and a system clock
US5636176A (en) * 1987-12-23 1997-06-03 Texas Instruments Incorporated Synchronous DRAM responsive to first and second clock signals
US6115321A (en) * 1997-06-17 2000-09-05 Texas Instruments Incorporated Synchronous dynamic random access memory with four-bit data prefetch
US6212596B1 (en) 1991-10-24 2001-04-03 Texas Instruments Incorporated Synchronous memory and data processing system having a programmable burst length
US6240047B1 (en) 1998-07-06 2001-05-29 Texas Instruments Incorporated Synchronous dynamic random access memory with four-bit data prefetch
WO2014088090A1 (ja) * 2012-12-07 2014-06-12 ピーエスフォー ルクスコ エスエイアールエル 半導体装置

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5147328A (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) * 1974-10-22 1976-04-22 Fujitsu Ltd
JPS52124827A (en) * 1976-04-13 1977-10-20 Nec Corp Semiconductor memory unit
JPS5410412A (en) * 1977-06-23 1979-01-26 Kyokuto Kikai Seisakusho:Kk Low noise multi-stage axial flow blower
JPS54121626A (en) * 1978-03-15 1979-09-20 Toshiba Corp Memory unit control system
JPS5698785A (en) * 1979-11-23 1981-08-08 Texas Instruments Inc Semiconductor memory device

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5147328A (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) * 1974-10-22 1976-04-22 Fujitsu Ltd
JPS52124827A (en) * 1976-04-13 1977-10-20 Nec Corp Semiconductor memory unit
JPS5410412A (en) * 1977-06-23 1979-01-26 Kyokuto Kikai Seisakusho:Kk Low noise multi-stage axial flow blower
JPS54121626A (en) * 1978-03-15 1979-09-20 Toshiba Corp Memory unit control system
JPS5698785A (en) * 1979-11-23 1981-08-08 Texas Instruments Inc Semiconductor memory device

Cited By (38)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH05114286A (ja) * 1982-09-29 1993-05-07 Texas Instr Inc <Ti> 電子装置
JPS60206317A (ja) * 1984-03-13 1985-10-17 テ　アール　テ　テレコミュニカシオン　ラジオエレクトリック　エ　テレホニク データ処理装置
JPS61117789A (ja) * 1984-11-13 1986-06-05 Nec Corp 半導体メモリ
JPS61134989A (ja) * 1984-12-05 1986-06-23 Toshiba Corp ダイナミック型メモリ
JPS61139990A (ja) * 1984-12-10 1986-06-27 Nec Corp シリアルアクセスメモリ
JPS61253697A (ja) * 1985-05-07 1986-11-11 Hitachi Ltd ダイナミツク型ｒａｍ
JPS626482A (ja) * 1985-06-29 1987-01-13 Toshiba Corp 半導体記憶装置
JPS6251093A (ja) * 1985-08-30 1987-03-05 Hitachi Ltd 半導体記憶装置
JPS6298440A (ja) * 1985-09-30 1987-05-07 エスジーエス―トムソン　マイクロエレクトロニクス　インク． プログラマブルアクセスメモリ
JPS62117187A (ja) * 1985-11-15 1987-05-28 Mitsubishi Electric Corp ２ポ−ト半導体記憶装置
JPS62173689A (ja) * 1986-01-27 1987-07-30 Matsushita Electric Ind Co Ltd 記憶装置
JPS6313197A (ja) * 1986-07-03 1988-01-20 Nec Corp ダイナミツク型半導体記憶装置
JPS6314395A (ja) * 1986-07-04 1988-01-21 Nec Corp 記憶回路
JPS6346697A (ja) * 1986-08-13 1988-02-27 Hitachi Ltd 半導体メモリ
JPS63225997A (ja) * 1987-03-16 1988-09-20 Hitachi Ltd 半導体記憶装置
JPH02128393A (ja) * 1987-10-29 1990-05-16 Texas Instr Inc <Ti> 直列制御回路を有するメモリ
JPH01118287A (ja) * 1987-10-30 1989-05-10 Nec Corp 記憶回路
JPH01130240A (ja) * 1987-11-16 1989-05-23 Yokogawa Hewlett Packard Ltd データ列発生装置
US6895465B2 (en) 1987-12-23 2005-05-17 Texas Instruments Incorporated SDRAM with command decoder, address registers, multiplexer, and sequencer
US6735668B2 (en) 1987-12-23 2004-05-11 Texas Instruments Incorporated Process of using a DRAM with address control data
US5636176A (en) * 1987-12-23 1997-06-03 Texas Instruments Incorporated Synchronous DRAM responsive to first and second clock signals
US6735667B2 (en) 1987-12-23 2004-05-11 Texas Instruments Incorporated Synchronous data system with control data buffer
US5680370A (en) * 1987-12-23 1997-10-21 Texas Instruments Incorporated Synchronous DRAM device having a control data buffer
US5587962A (en) * 1987-12-23 1996-12-24 Texas Instruments Incorporated Memory circuit accommodating both serial and random access including an alternate address buffer register
JPH02257494A (ja) * 1988-01-28 1990-10-18 Natl Semiconductor Corp <Ns> ユーザが決定した開始アドレスを有する直列メモリの逐次的読取アクセス
JPH01207849A (ja) * 1988-02-16 1989-08-21 Mitsubishi Electric Corp メモリカード
JPH04228178A (ja) * 1990-09-20 1992-08-18 Sharp Corp 不揮発性ｄｒａｍ記憶装置におけるデータのページリコールのための装置と方法
US5587954A (en) * 1991-04-23 1996-12-24 Texas Instruments Incorporated Random access memory arranged for operating synchronously with a microprocessor and a system including a data processor, a synchronous DRAM, a peripheral device, and a system clock
US5808958A (en) * 1991-04-23 1998-09-15 Texas Instruments Incorporated Random access memory with latency arranged for operating synchronously with a micro processor and a system including a data processor, a synchronous DRAM, a peripheral device, and a system clock
US5982694A (en) * 1991-04-23 1999-11-09 Texas Instruments Incorporated High speed memory arranged for operating synchronously with a microprocessor
US6223264B1 (en) 1991-10-24 2001-04-24 Texas Instruments Incorporated Synchronous dynamic random access memory and data processing system using an address select signal
US6212596B1 (en) 1991-10-24 2001-04-03 Texas Instruments Incorporated Synchronous memory and data processing system having a programmable burst length
US6230250B1 (en) 1991-10-24 2001-05-08 Texas Instruments Incorporated Synchronous memory and data processing system having a programmable burst order
JPH06187779A (ja) * 1993-08-01 1994-07-08 Toshiba Corp 半導体記憶装置
JPH087568A (ja) * 1994-06-27 1996-01-12 Nec Corp ダイナミックｒａｍ
US6115321A (en) * 1997-06-17 2000-09-05 Texas Instruments Incorporated Synchronous dynamic random access memory with four-bit data prefetch
US6240047B1 (en) 1998-07-06 2001-05-29 Texas Instruments Incorporated Synchronous dynamic random access memory with four-bit data prefetch
WO2014088090A1 (ja) * 2012-12-07 2014-06-12 ピーエスフォー ルクスコ エスエイアールエル 半導体装置

Also Published As

Publication number Publication date
JPH0442758B2 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) 1992-07-14

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