JPS5945920A - 高純度けい素の製造に有用なトリクロルシランを主体とした混合物の製造方法 - Google Patents
高純度けい素の製造に有用なトリクロルシランを主体とした混合物の製造方法Info
- Publication number
- JPS5945920A JPS5945920A JP58134511A JP13451183A JPS5945920A JP S5945920 A JPS5945920 A JP S5945920A JP 58134511 A JP58134511 A JP 58134511A JP 13451183 A JP13451183 A JP 13451183A JP S5945920 A JPS5945920 A JP S5945920A
- Authority
- JP
- Japan
- Prior art keywords
- trichlorosilane
- gas
- reaction
- silicon
- hydrogen
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- ZDHXKXAHOVTTAH-UHFFFAOYSA-N trichlorosilane Chemical compound Cl[SiH](Cl)Cl ZDHXKXAHOVTTAH-UHFFFAOYSA-N 0.000 title claims description 31
- 239000005052 trichlorosilane Substances 0.000 title claims description 30
- 229910052710 silicon Inorganic materials 0.000 title claims description 9
- 239000010703 silicon Substances 0.000 title claims description 9
- 238000004519 manufacturing process Methods 0.000 title claims description 6
- 239000000203 mixture Substances 0.000 title description 20
- 239000007789 gas Substances 0.000 claims description 33
- 238000006243 chemical reaction Methods 0.000 claims description 26
- VXEGSRKPIUDPQT-UHFFFAOYSA-N 4-[4-(4-methoxyphenyl)piperazin-1-yl]aniline Chemical compound C1=CC(OC)=CC=C1N1CCN(C=2C=CC(N)=CC=2)CC1 VXEGSRKPIUDPQT-UHFFFAOYSA-N 0.000 claims description 21
- 239000005049 silicon tetrachloride Substances 0.000 claims description 21
- 229910052739 hydrogen Inorganic materials 0.000 claims description 14
- 239000001257 hydrogen Substances 0.000 claims description 13
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 12
- 238000010791 quenching Methods 0.000 claims description 11
- 230000000171 quenching effect Effects 0.000 claims description 10
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 claims description 9
- 239000011541 reaction mixture Substances 0.000 claims description 7
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 4
- 150000002431 hydrogen Chemical class 0.000 claims description 4
- 239000011261 inert gas Substances 0.000 claims description 4
- 239000003054 catalyst Substances 0.000 claims description 3
- 229910052802 copper Inorganic materials 0.000 claims description 3
- 239000010949 copper Substances 0.000 claims description 3
- 239000012429 reaction media Substances 0.000 claims description 3
- 239000002253 acid Substances 0.000 claims description 2
- VNWKTOKETHGBQD-UHFFFAOYSA-N methane Chemical compound C VNWKTOKETHGBQD-UHFFFAOYSA-N 0.000 claims 2
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 description 12
- 229910052786 argon Inorganic materials 0.000 description 6
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 5
- 239000008246 gaseous mixture Substances 0.000 description 5
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 4
- 238000000354 decomposition reaction Methods 0.000 description 4
- 238000000034 method Methods 0.000 description 3
- 239000011863 silicon-based powder Substances 0.000 description 3
- KPZGRMZPZLOPBS-UHFFFAOYSA-N 1,3-dichloro-2,2-bis(chloromethyl)propane Chemical compound ClCC(CCl)(CCl)CCl KPZGRMZPZLOPBS-UHFFFAOYSA-N 0.000 description 2
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 2
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- 238000005265 energy consumption Methods 0.000 description 2
- 229910000077 silane Inorganic materials 0.000 description 2
- 239000000377 silicon dioxide Substances 0.000 description 2
- FDNAPBUWERUEDA-UHFFFAOYSA-N silicon tetrachloride Chemical compound Cl[Si](Cl)(Cl)Cl FDNAPBUWERUEDA-UHFFFAOYSA-N 0.000 description 2
- 239000005046 Chlorosilane Substances 0.000 description 1
- 206010062717 Increased upper airway secretion Diseases 0.000 description 1
- WHXSMMKQMYFTQS-UHFFFAOYSA-N Lithium Chemical compound [Li] WHXSMMKQMYFTQS-UHFFFAOYSA-N 0.000 description 1
- 241001474791 Proboscis Species 0.000 description 1
- 229910000831 Steel Inorganic materials 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 210000000988 bone and bone Anatomy 0.000 description 1
- KOPOQZFJUQMUML-UHFFFAOYSA-N chlorosilane Chemical group Cl[SiH3] KOPOQZFJUQMUML-UHFFFAOYSA-N 0.000 description 1
- 238000004587 chromatography analysis Methods 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- 238000007323 disproportionation reaction Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 238000002347 injection Methods 0.000 description 1
- 239000007924 injection Substances 0.000 description 1
- 229910052742 iron Inorganic materials 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 229910052744 lithium Inorganic materials 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 208000026435 phlegm Diseases 0.000 description 1
- 229910052573 porcelain Inorganic materials 0.000 description 1
- 239000000843 powder Substances 0.000 description 1
- 239000012255 powdered metal Substances 0.000 description 1
- 239000000376 reactant Substances 0.000 description 1
- 239000012495 reaction gas Substances 0.000 description 1
- 150000003376 silicon Chemical class 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 239000010959 steel Substances 0.000 description 1
- 238000003786 synthesis reaction Methods 0.000 description 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 239000010937 tungsten Substances 0.000 description 1
- 238000005406 washing Methods 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
- C01B33/00—Silicon; Compounds thereof
- C01B33/08—Compounds containing halogen
- C01B33/107—Halogenated silanes
- C01B33/1071—Tetrachloride, trichlorosilane or silicochloroform, dichlorosilane, monochlorosilane or mixtures thereof
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S423/00—Chemistry of inorganic compounds
- Y10S423/09—Reaction techniques
- Y10S423/10—Plasma energized
Landscapes
- Chemical & Material Sciences (AREA)
- Organic Chemistry (AREA)
- Inorganic Chemistry (AREA)
- Silicon Compounds (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| FR8212971A FR2530638A1 (fr) | 1982-07-26 | 1982-07-26 | Procede de preparation d'un melange a base de trichlorosilane utilisable pour la preparation de silicium de haute purete |
| FR82.12971 | 1982-07-26 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS5945920A true JPS5945920A (ja) | 1984-03-15 |
| JPS6261530B2 JPS6261530B2 (enExample) | 1987-12-22 |
Family
ID=9276302
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP58134511A Granted JPS5945920A (ja) | 1982-07-26 | 1983-07-25 | 高純度けい素の製造に有用なトリクロルシランを主体とした混合物の製造方法 |
Country Status (6)
| Country | Link |
|---|---|
| US (1) | US4836997A (enExample) |
| EP (1) | EP0100266B1 (enExample) |
| JP (1) | JPS5945920A (enExample) |
| CA (1) | CA1210221A (enExample) |
| DE (1) | DE3371190D1 (enExample) |
| FR (1) | FR2530638A1 (enExample) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2013500928A (ja) * | 2009-08-04 | 2013-01-10 | シュミット シリコン テクノロジー ゲゼルシャフト ミット ベシュレンクテル ハフツング | トリクロロシランを製造するための設備および方法 |
| JP2014534155A (ja) * | 2011-10-20 | 2014-12-18 | アールイーシー シリコン インコーポレイテッド | ヒドロクロロシラン生産における汚損低減 |
| JP2016516665A (ja) * | 2013-04-24 | 2016-06-09 | エボニック デグサ ゲーエムベーハーＥｖｏｎｉｋ Ｄｅｇｕｓｓａ ＧｍｂＨ | ポリクロロシランの製造方法および製造装置 |
Families Citing this family (34)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5422088A (en) * | 1994-01-28 | 1995-06-06 | Hemlock Semiconductor Corporation | Process for hydrogenation of tetrachlorosilane |
| US5869017A (en) * | 1997-05-12 | 1999-02-09 | Tokuyama Corporation | Method of producing trichlorosilane having a reduced content of dichlorosilane |
| RU2142909C1 (ru) * | 1998-07-30 | 1999-12-20 | Институт химии высокочистых веществ РАН | Способ получения высокочистого трихлорсилана и устройство для его осуществления |
| KR100385947B1 (ko) * | 2000-12-06 | 2003-06-02 | 삼성전자주식회사 | 원자층 증착 방법에 의한 박막 형성 방법 |
| DE102005005044A1 (de) * | 2005-02-03 | 2006-08-10 | Consortium für elektrochemische Industrie GmbH | Verfahren zur Herstellung von Trichlorsilan mittels thermischer Hydrierung von Siliciumtetrachlorid |
| DE102005024041A1 (de) | 2005-05-25 | 2006-11-30 | City Solar Ag | Verfahren zur Herstellung von Silicium aus Halogensilanen |
| DE102005041137A1 (de) * | 2005-08-30 | 2007-03-01 | Degussa Ag | Reaktor, Anlage und großtechnisches Verfahren zur kontinuierlichen Herstellung von hochreinem Siliciumtetrachlorid oder hochreinem Germaniumtetrachlorid |
| DE102006043929B4 (de) * | 2006-09-14 | 2016-10-06 | Spawnt Private S.À.R.L. | Verfahren zur Herstellung von festen Polysilanmischungen |
| JP5601438B2 (ja) * | 2006-11-07 | 2014-10-08 | 三菱マテリアル株式会社 | トリクロロシランの製造方法およびトリクロロシラン製造装置 |
| RU2350558C2 (ru) * | 2007-05-02 | 2009-03-27 | Федеральное государственное унитарное предприятие "Горно-химический комбинат" | Способ получения трихлорсилана плазмохимическим гидрированием тетрахлорида кремния и устройство для его осуществления |
| DE102007041803A1 (de) * | 2007-08-30 | 2009-03-05 | Pv Silicon Forschungs Und Produktions Gmbh | Verfahren zur Herstellung von polykristallinen Siliziumstäben und polykristalliner Siliziumstab |
| WO2010108065A1 (en) * | 2009-03-19 | 2010-09-23 | Ae Polysilicon Corporation | Silicide - coated metal surfaces and methods of utilizing same |
| EP2421659A1 (en) * | 2009-04-20 | 2012-02-29 | Ae Polysilicon Corporation | A reactor with silicide-coated metal surfaces |
| TWI454309B (zh) * | 2009-04-20 | 2014-10-01 | Jiangsu Zhongneng Polysilicon Technology Dev Co Ltd | 用於將反應排出氣體冷卻之方法及系統 |
| US20100266762A1 (en) * | 2009-04-20 | 2010-10-21 | Ben Fieselmann | Processes and an apparatus for manufacturing high purity polysilicon |
| KR20100117025A (ko) * | 2009-04-23 | 2010-11-02 | 스미또모 가가꾸 가부시키가이샤 | 포토레지스트 패턴 형성 방법 |
| US9073951B2 (en) | 2010-01-26 | 2015-07-07 | Dow Corning Corporation | Method of preparing an organohalosilane |
| EP2576573B1 (en) | 2010-05-28 | 2015-06-24 | Dow Corning Corporation | A method for preparing a diorganodihalosilane |
| WO2011149593A1 (en) | 2010-05-28 | 2011-12-01 | Dow Corning Corporation | Preparation of organohalosilanes |
| DE102010044755A1 (de) | 2010-09-08 | 2012-03-08 | Spawnt Private S.À.R.L. | Verfahren zur Herstellung von Silicium hoher Reinheit |
| US8765090B2 (en) | 2010-09-08 | 2014-07-01 | Dow Corning Corporation | Method for preparing a trihalosilane |
| AU2011344089A1 (en) | 2010-12-17 | 2013-05-09 | Dow Corning Corporation | Method of making a trihalosilane |
| EP2651955A1 (en) | 2010-12-17 | 2013-10-23 | Dow Corning Corporation | Method of making a diorganodihalosilane |
| AU2012209345A1 (en) | 2011-01-25 | 2013-06-13 | Dow Corning Corporation | Method of preparing a diorganodihalosilane |
| KR20140136985A (ko) * | 2012-03-14 | 2014-12-01 | 센트로섬 포토볼타익스 유에스에이, 인크. | 트리클로로실란의 제조 |
| FR2991988B1 (fr) | 2012-06-15 | 2015-08-07 | Laurent Laroche | Procede de preparation d'objets en hydrogel biocompatible pour leur application dans le domaine medical, et plus particulierement en ophtalmologie |
| CN104736547A (zh) | 2012-08-13 | 2015-06-24 | 道康宁公司 | 通过使氢、卤硅烷和有机卤化物在铜催化剂上以两步法反应制备有机卤硅烷的方法 |
| KR102082629B1 (ko) | 2012-10-16 | 2020-02-28 | 다우 실리콘즈 코포레이션 | 할로겐화 실라하이드로카르빌렌의 제조 방법 |
| JP6479794B2 (ja) | 2013-11-12 | 2019-03-06 | ダウ シリコーンズ コーポレーション | ハロシランを製造する方法 |
| EP3233731B1 (en) | 2014-12-18 | 2020-08-05 | Dow Silicones Corporation | Method for producing aryl-functional silanes |
| CN112573522B (zh) * | 2020-12-14 | 2022-07-26 | 亚洲硅业(青海)股份有限公司 | 硅基电子特气的制备方法及硅基电子特气的生产系统 |
| CN113072074A (zh) * | 2021-04-25 | 2021-07-06 | 森松（江苏）重工有限公司 | 还原炉的炉筒冷却方法、装置及多晶硅还原生产方法 |
| CN113912066A (zh) * | 2021-09-09 | 2022-01-11 | 全椒亚格泰电子新材料科技有限公司 | 一种制备氯代硅烷的方法 |
| CN116835599A (zh) * | 2023-07-03 | 2023-10-03 | 四川永祥能源科技有限公司 | 一种高沸物回收方法 |
Family Cites Families (11)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3069239A (en) * | 1958-10-28 | 1962-12-18 | Westinghouse Electric Corp | Purification of halogenated silicon compounds |
| GB883326A (en) * | 1959-04-08 | 1961-11-29 | Bbc Brown Boveri & Cie | Method of producing trichlorsilane |
| FR1239350A (fr) * | 1959-06-24 | 1960-12-16 | Pechiney | Perfectionnement à la fabrication industrielle du trichlorosilane |
| DE1129145B (de) * | 1960-07-07 | 1962-05-10 | Knapsack Ag | Verfahren zur Herstellung von hochreinem Silicium |
| FR1292508A (fr) * | 1960-07-07 | 1962-05-04 | Knapsack Ag | Procédé de fabrication de silicium de grande pureté |
| US3899573A (en) * | 1971-10-18 | 1975-08-12 | Exxon Research Engineering Co | Production of fine powders |
| US4321246A (en) * | 1980-05-09 | 1982-03-23 | Motorola, Inc. | Polycrystalline silicon production |
| US4309259A (en) * | 1980-05-09 | 1982-01-05 | Motorola, Inc. | High pressure plasma hydrogenation of silicon tetrachloride |
| DE3024319C2 (de) * | 1980-06-27 | 1983-07-21 | Wacker-Chemitronic Gesellschaft für Elektronik-Grundstoffe mbH, 8263 Burghausen | Kontinuierliches Verfahren zur Herstellung von Trichlorsilan |
| JPS57156318A (en) * | 1981-03-16 | 1982-09-27 | Koujiyundo Silicon Kk | Production of trichlorosilane |
| US4451436A (en) * | 1983-02-01 | 1984-05-29 | Hare Louis R O | Nitrogen fixation by plasma and catalyst |
-
1982
- 1982-07-26 FR FR8212971A patent/FR2530638A1/fr active Granted
-
1983
- 1983-07-13 EP EP83401454A patent/EP0100266B1/fr not_active Expired
- 1983-07-13 DE DE8383401454T patent/DE3371190D1/de not_active Expired
- 1983-07-25 US US06/516,843 patent/US4836997A/en not_active Expired - Fee Related
- 1983-07-25 CA CA000433086A patent/CA1210221A/fr not_active Expired
- 1983-07-25 JP JP58134511A patent/JPS5945920A/ja active Granted
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2013500928A (ja) * | 2009-08-04 | 2013-01-10 | シュミット シリコン テクノロジー ゲゼルシャフト ミット ベシュレンクテル ハフツング | トリクロロシランを製造するための設備および方法 |
| JP2014534155A (ja) * | 2011-10-20 | 2014-12-18 | アールイーシー シリコン インコーポレイテッド | ヒドロクロロシラン生産における汚損低減 |
| JP2016516665A (ja) * | 2013-04-24 | 2016-06-09 | エボニック デグサ ゲーエムベーハーＥｖｏｎｉｋ Ｄｅｇｕｓｓａ ＧｍｂＨ | ポリクロロシランの製造方法および製造装置 |
Also Published As
| Publication number | Publication date |
|---|---|
| JPS6261530B2 (enExample) | 1987-12-22 |
| FR2530638A1 (fr) | 1984-01-27 |
| CA1210221A (fr) | 1986-08-26 |
| EP0100266A1 (fr) | 1984-02-08 |
| EP0100266B1 (fr) | 1987-04-29 |
| US4836997A (en) | 1989-06-06 |
| FR2530638B1 (enExample) | 1985-02-22 |
| DE3371190D1 (en) | 1987-06-04 |
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