DE3371190D1 - Process for the manufacture of a mixture based on trichlorosilane for use in the manufacture of high purity silicon - Google Patents

Process for the manufacture of a mixture based on trichlorosilane for use in the manufacture of high purity silicon

Info

Publication number
DE3371190D1
DE3371190D1 DE8383401454T DE3371190T DE3371190D1 DE 3371190 D1 DE3371190 D1 DE 3371190D1 DE 8383401454 T DE8383401454 T DE 8383401454T DE 3371190 T DE3371190 T DE 3371190T DE 3371190 D1 DE3371190 D1 DE 3371190D1
Authority
DE
Germany
Prior art keywords
manufacture
trichlorosilane
high purity
purity silicon
mixture based
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
DE8383401454T
Other languages
German (de)
English (en)
Inventor
Jean-Luc Lepage
Gerard Simon
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Rhone Poulenc Specialites Chimiques
Original Assignee
Rhone Poulenc Specialites Chimiques
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Rhone Poulenc Specialites Chimiques filed Critical Rhone Poulenc Specialites Chimiques
Application granted granted Critical
Publication of DE3371190D1 publication Critical patent/DE3371190D1/de
Expired legal-status Critical Current

Links

Classifications

    • CCHEMISTRY; METALLURGY
    • C01INORGANIC CHEMISTRY
    • C01BNON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B33/00Silicon; Compounds thereof
    • C01B33/08Compounds containing halogen
    • C01B33/107Halogenated silanes
    • C01B33/1071Tetrachloride, trichlorosilane or silicochloroform, dichlorosilane, monochlorosilane or mixtures thereof
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10STECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S423/00Chemistry of inorganic compounds
    • Y10S423/09Reaction techniques
    • Y10S423/10Plasma energized

Landscapes

  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • Silicon Compounds (AREA)
DE8383401454T 1982-07-26 1983-07-13 Process for the manufacture of a mixture based on trichlorosilane for use in the manufacture of high purity silicon Expired DE3371190D1 (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR8212971A FR2530638A1 (fr) 1982-07-26 1982-07-26 Procede de preparation d'un melange a base de trichlorosilane utilisable pour la preparation de silicium de haute purete

Publications (1)

Publication Number Publication Date
DE3371190D1 true DE3371190D1 (en) 1987-06-04

Family

ID=9276302

Family Applications (1)

Application Number Title Priority Date Filing Date
DE8383401454T Expired DE3371190D1 (en) 1982-07-26 1983-07-13 Process for the manufacture of a mixture based on trichlorosilane for use in the manufacture of high purity silicon

Country Status (6)

Country Link
US (1) US4836997A (enExample)
EP (1) EP0100266B1 (enExample)
JP (1) JPS5945920A (enExample)
CA (1) CA1210221A (enExample)
DE (1) DE3371190D1 (enExample)
FR (1) FR2530638A1 (enExample)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN113072074A (zh) * 2021-04-25 2021-07-06 森松(江苏)重工有限公司 还原炉的炉筒冷却方法、装置及多晶硅还原生产方法

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US5422088A (en) * 1994-01-28 1995-06-06 Hemlock Semiconductor Corporation Process for hydrogenation of tetrachlorosilane
US5869017A (en) * 1997-05-12 1999-02-09 Tokuyama Corporation Method of producing trichlorosilane having a reduced content of dichlorosilane
RU2142909C1 (ru) * 1998-07-30 1999-12-20 Институт химии высокочистых веществ РАН Способ получения высокочистого трихлорсилана и устройство для его осуществления
KR100385947B1 (ko) * 2000-12-06 2003-06-02 삼성전자주식회사 원자층 증착 방법에 의한 박막 형성 방법
DE102005005044A1 (de) * 2005-02-03 2006-08-10 Consortium für elektrochemische Industrie GmbH Verfahren zur Herstellung von Trichlorsilan mittels thermischer Hydrierung von Siliciumtetrachlorid
DE102005024041A1 (de) 2005-05-25 2006-11-30 City Solar Ag Verfahren zur Herstellung von Silicium aus Halogensilanen
DE102005041137A1 (de) * 2005-08-30 2007-03-01 Degussa Ag Reaktor, Anlage und großtechnisches Verfahren zur kontinuierlichen Herstellung von hochreinem Siliciumtetrachlorid oder hochreinem Germaniumtetrachlorid
DE102006043929B4 (de) * 2006-09-14 2016-10-06 Spawnt Private S.À.R.L. Verfahren zur Herstellung von festen Polysilanmischungen
JP5601438B2 (ja) * 2006-11-07 2014-10-08 三菱マテリアル株式会社 トリクロロシランの製造方法およびトリクロロシラン製造装置
RU2350558C2 (ru) * 2007-05-02 2009-03-27 Федеральное государственное унитарное предприятие "Горно-химический комбинат" Способ получения трихлорсилана плазмохимическим гидрированием тетрахлорида кремния и устройство для его осуществления
DE102007041803A1 (de) * 2007-08-30 2009-03-05 Pv Silicon Forschungs Und Produktions Gmbh Verfahren zur Herstellung von polykristallinen Siliziumstäben und polykristalliner Siliziumstab
WO2010108065A1 (en) * 2009-03-19 2010-09-23 Ae Polysilicon Corporation Silicide - coated metal surfaces and methods of utilizing same
EP2421659A1 (en) * 2009-04-20 2012-02-29 Ae Polysilicon Corporation A reactor with silicide-coated metal surfaces
TWI454309B (zh) * 2009-04-20 2014-10-01 Jiangsu Zhongneng Polysilicon Technology Dev Co Ltd 用於將反應排出氣體冷卻之方法及系統
US20100266762A1 (en) * 2009-04-20 2010-10-21 Ben Fieselmann Processes and an apparatus for manufacturing high purity polysilicon
KR20100117025A (ko) * 2009-04-23 2010-11-02 스미또모 가가꾸 가부시키가이샤 포토레지스트 패턴 형성 방법
DE102009037155B3 (de) * 2009-08-04 2010-11-04 Schmid Silicon Technology Gmbh Verfahren und Anlage zur Herstellung von Trichlorsilan
US9073951B2 (en) 2010-01-26 2015-07-07 Dow Corning Corporation Method of preparing an organohalosilane
EP2576573B1 (en) 2010-05-28 2015-06-24 Dow Corning Corporation A method for preparing a diorganodihalosilane
WO2011149593A1 (en) 2010-05-28 2011-12-01 Dow Corning Corporation Preparation of organohalosilanes
DE102010044755A1 (de) 2010-09-08 2012-03-08 Spawnt Private S.À.R.L. Verfahren zur Herstellung von Silicium hoher Reinheit
US8765090B2 (en) 2010-09-08 2014-07-01 Dow Corning Corporation Method for preparing a trihalosilane
AU2011344089A1 (en) 2010-12-17 2013-05-09 Dow Corning Corporation Method of making a trihalosilane
EP2651955A1 (en) 2010-12-17 2013-10-23 Dow Corning Corporation Method of making a diorganodihalosilane
AU2012209345A1 (en) 2011-01-25 2013-06-13 Dow Corning Corporation Method of preparing a diorganodihalosilane
KR101987396B1 (ko) * 2011-10-20 2019-06-10 알이씨 실리콘 인코포레이티드 하이드로클로로실란 제조시 파울링의 감소
KR20140136985A (ko) * 2012-03-14 2014-12-01 센트로섬 포토볼타익스 유에스에이, 인크. 트리클로로실란의 제조
FR2991988B1 (fr) 2012-06-15 2015-08-07 Laurent Laroche Procede de preparation d'objets en hydrogel biocompatible pour leur application dans le domaine medical, et plus particulierement en ophtalmologie
CN104736547A (zh) 2012-08-13 2015-06-24 道康宁公司 通过使氢、卤硅烷和有机卤化物在铜催化剂上以两步法反应制备有机卤硅烷的方法
KR102082629B1 (ko) 2012-10-16 2020-02-28 다우 실리콘즈 코포레이션 할로겐화 실라하이드로카르빌렌의 제조 방법
DE102013207444A1 (de) * 2013-04-24 2014-10-30 Evonik Degussa Gmbh Verfahren und Vorrichtung zur Herstellung von Polychlorsilanen
JP6479794B2 (ja) 2013-11-12 2019-03-06 ダウ シリコーンズ コーポレーション ハロシランを製造する方法
EP3233731B1 (en) 2014-12-18 2020-08-05 Dow Silicones Corporation Method for producing aryl-functional silanes
CN112573522B (zh) * 2020-12-14 2022-07-26 亚洲硅业(青海)股份有限公司 硅基电子特气的制备方法及硅基电子特气的生产系统
CN113912066A (zh) * 2021-09-09 2022-01-11 全椒亚格泰电子新材料科技有限公司 一种制备氯代硅烷的方法
CN116835599A (zh) * 2023-07-03 2023-10-03 四川永祥能源科技有限公司 一种高沸物回收方法

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US3069239A (en) * 1958-10-28 1962-12-18 Westinghouse Electric Corp Purification of halogenated silicon compounds
GB883326A (en) * 1959-04-08 1961-11-29 Bbc Brown Boveri & Cie Method of producing trichlorsilane
FR1239350A (fr) * 1959-06-24 1960-12-16 Pechiney Perfectionnement à la fabrication industrielle du trichlorosilane
DE1129145B (de) * 1960-07-07 1962-05-10 Knapsack Ag Verfahren zur Herstellung von hochreinem Silicium
FR1292508A (fr) * 1960-07-07 1962-05-04 Knapsack Ag Procédé de fabrication de silicium de grande pureté
US3899573A (en) * 1971-10-18 1975-08-12 Exxon Research Engineering Co Production of fine powders
US4321246A (en) * 1980-05-09 1982-03-23 Motorola, Inc. Polycrystalline silicon production
US4309259A (en) * 1980-05-09 1982-01-05 Motorola, Inc. High pressure plasma hydrogenation of silicon tetrachloride
DE3024319C2 (de) * 1980-06-27 1983-07-21 Wacker-Chemitronic Gesellschaft für Elektronik-Grundstoffe mbH, 8263 Burghausen Kontinuierliches Verfahren zur Herstellung von Trichlorsilan
JPS57156318A (en) * 1981-03-16 1982-09-27 Koujiyundo Silicon Kk Production of trichlorosilane
US4451436A (en) * 1983-02-01 1984-05-29 Hare Louis R O Nitrogen fixation by plasma and catalyst

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN113072074A (zh) * 2021-04-25 2021-07-06 森松(江苏)重工有限公司 还原炉的炉筒冷却方法、装置及多晶硅还原生产方法

Also Published As

Publication number Publication date
JPS5945920A (ja) 1984-03-15
JPS6261530B2 (enExample) 1987-12-22
FR2530638A1 (fr) 1984-01-27
CA1210221A (fr) 1986-08-26
EP0100266A1 (fr) 1984-02-08
EP0100266B1 (fr) 1987-04-29
US4836997A (en) 1989-06-06
FR2530638B1 (enExample) 1985-02-22

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee