FR1292508A - Procédé de fabrication de silicium de grande pureté - Google Patents
Procédé de fabrication de silicium de grande puretéInfo
- Publication number
- FR1292508A FR1292508A FR864579A FR864579A FR1292508A FR 1292508 A FR1292508 A FR 1292508A FR 864579 A FR864579 A FR 864579A FR 864579 A FR864579 A FR 864579A FR 1292508 A FR1292508 A FR 1292508A
- Authority
- FR
- France
- Prior art keywords
- manufacturing process
- high purity
- purity silicon
- silicon manufacturing
- silicon
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
- H01L21/02521—Materials
- H01L21/02524—Group 14 semiconducting materials
- H01L21/02532—Silicon, silicon germanium, germanium
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
- C01B33/00—Silicon; Compounds thereof
- C01B33/02—Silicon
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02612—Formation types
- H01L21/02617—Deposition types
- H01L21/0262—Reduction or decomposition of gaseous compounds, e.g. CVD
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Chemical & Material Sciences (AREA)
- Organic Chemistry (AREA)
- Inorganic Chemistry (AREA)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
FR864579A FR1292508A (fr) | 1960-07-07 | 1961-06-12 | Procédé de fabrication de silicium de grande pureté |
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
DEK41130A DE1129145B (de) | 1960-07-07 | 1960-07-07 | Verfahren zur Herstellung von hochreinem Silicium |
FR864579A FR1292508A (fr) | 1960-07-07 | 1961-06-12 | Procédé de fabrication de silicium de grande pureté |
Publications (1)
Publication Number | Publication Date |
---|---|
FR1292508A true FR1292508A (fr) | 1962-05-04 |
Family
ID=25983286
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
FR864579A Expired FR1292508A (fr) | 1960-07-07 | 1961-06-12 | Procédé de fabrication de silicium de grande pureté |
Country Status (1)
Country | Link |
---|---|
FR (1) | FR1292508A (fr) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4117094A (en) * | 1977-06-13 | 1978-09-26 | Texas Instruments Incorporated | Process for silicon and trichlorosilane production |
FR2530638A1 (fr) * | 1982-07-26 | 1984-01-27 | Rhone Poulenc Spec Chim | Procede de preparation d'un melange a base de trichlorosilane utilisable pour la preparation de silicium de haute purete |
-
1961
- 1961-06-12 FR FR864579A patent/FR1292508A/fr not_active Expired
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4117094A (en) * | 1977-06-13 | 1978-09-26 | Texas Instruments Incorporated | Process for silicon and trichlorosilane production |
FR2530638A1 (fr) * | 1982-07-26 | 1984-01-27 | Rhone Poulenc Spec Chim | Procede de preparation d'un melange a base de trichlorosilane utilisable pour la preparation de silicium de haute purete |
EP0100266A1 (fr) * | 1982-07-26 | 1984-02-08 | Rhone-Poulenc Chimie | Procédé de préparation d'un mélange à base de trichlorosilane utilisable pour la préparation de silicium de haute pureté |
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