BE616590A - Procédé de fabrication de surfaces semi-conductrices extra planes - Google Patents
Procédé de fabrication de surfaces semi-conductrices extra planesInfo
- Publication number
- BE616590A BE616590A BE616590A BE616590A BE616590A BE 616590 A BE616590 A BE 616590A BE 616590 A BE616590 A BE 616590A BE 616590 A BE616590 A BE 616590A BE 616590 A BE616590 A BE 616590A
- Authority
- BE
- Belgium
- Prior art keywords
- manufacturing process
- semiconductor surfaces
- flat semiconductor
- extra flat
- extra
- Prior art date
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02612—Formation types
- H01L21/02617—Deposition types
- H01L21/0262—Reduction or decomposition of gaseous compounds, e.g. CVD
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
- H01L21/02521—Materials
- H01L21/02524—Group 14 semiconducting materials
- H01L21/02532—Silicon, silicon germanium, germanium
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
- Chemical Vapour Deposition (AREA)
- Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| DES73615A DE1239669B (de) | 1961-04-22 | 1961-04-22 | Verfahren zum Herstellen extrem planer Halbleiterflaechen |
| DES0074875 | 1961-07-18 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| BE616590A true BE616590A (fr) | 1962-10-18 |
Family
ID=25996418
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| BE616590A BE616590A (fr) | 1961-04-22 | 1962-04-18 | Procédé de fabrication de surfaces semi-conductrices extra planes |
Country Status (6)
| Country | Link |
|---|---|
| US (1) | US3200001A (fr) |
| BE (1) | BE616590A (fr) |
| CH (1) | CH395347A (fr) |
| DE (1) | DE1239669B (fr) |
| GB (1) | GB1002697A (fr) |
| NL (1) | NL277330A (fr) |
Families Citing this family (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3325314A (en) * | 1961-10-27 | 1967-06-13 | Siemens Ag | Semi-conductor product and method for making same |
| US3379584A (en) * | 1964-09-04 | 1968-04-23 | Texas Instruments Inc | Semiconductor wafer with at least one epitaxial layer and methods of making same |
| US3447902A (en) * | 1966-04-04 | 1969-06-03 | Motorola Inc | Single crystal silicon rods |
| US3585464A (en) * | 1967-10-19 | 1971-06-15 | Ibm | Semiconductor device fabrication utilizing {21 100{22 {0 oriented substrate material |
| NL171309C (nl) * | 1970-03-02 | 1983-03-01 | Hitachi Ltd | Werkwijze voor de vervaardiging van een halfgeleiderlichaam, waarbij een laag van siliciumdioxyde wordt gevormd op een oppervlak van een monokristallijn lichaam van silicium. |
| JP3444327B2 (ja) * | 1996-03-04 | 2003-09-08 | 信越半導体株式会社 | シリコン単結晶薄膜の製造方法 |
| DE102010040836A1 (de) * | 2010-09-15 | 2012-03-15 | Wacker Chemie Ag | Verfahren zur Herstellung von Silicium-Dünnstäben |
Family Cites Families (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| NL258754A (fr) * | 1954-05-18 | 1900-01-01 | ||
| DE1061745B (de) * | 1957-11-28 | 1959-07-23 | Siemens Ag | Verfahren und Vorrichtung zum Ausrichten eines Keimkristalls beim Ziehen von Einkristallen |
| DE1150366B (de) * | 1958-12-09 | 1963-06-20 | Siemens Ag | Verfahren zur Herstellung von Reinstsilicium |
| US2930722A (en) * | 1959-02-03 | 1960-03-29 | Bell Telephone Labor Inc | Method of treating silicon |
-
0
- NL NL277330D patent/NL277330A/xx unknown
-
1961
- 1961-04-22 DE DES73615A patent/DE1239669B/de active Pending
-
1962
- 1962-03-15 CH CH312162A patent/CH395347A/de unknown
- 1962-04-18 BE BE616590A patent/BE616590A/fr unknown
- 1962-04-18 GB GB15105/62A patent/GB1002697A/en not_active Expired
- 1962-04-19 US US188701A patent/US3200001A/en not_active Expired - Lifetime
Also Published As
| Publication number | Publication date |
|---|---|
| CH395347A (de) | 1965-07-15 |
| GB1002697A (en) | 1965-08-25 |
| US3200001A (en) | 1965-08-10 |
| NL277330A (fr) | |
| DE1239669B (de) | 1967-05-03 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| BE625351A (fr) | Procédé de fabrication de polyuréthanes | |
| FR1287279A (fr) | Procédé de fabrication de dispositifs semi-conducteurs | |
| FR1233186A (fr) | Procédé de fabrication de semi-conducteurs | |
| BE616590A (fr) | Procédé de fabrication de surfaces semi-conductrices extra planes | |
| FR1306951A (fr) | Procédé de fabrication de diamants | |
| FR1509909A (fr) | Procédé de fabrication de 3-hydroxy-benzisoxazoles | |
| FR1512313A (fr) | Procédé de fabrication de fluorostéroïdes | |
| FR1405168A (fr) | Procédé de fabrication de semi-conducteurs | |
| FR1303635A (fr) | Procédé de fabrication de dispositifs à semi-conducteur | |
| BE618421A (fr) | Procédé de fabrication de semiconducteurs | |
| BE616591A (fr) | Procédé de fabrication de systèmes à semi-conducteurs | |
| FR1286136A (fr) | Procédé de fabrication de la zéolite x | |
| FR1280507A (fr) | Procédé de fabrication de semi-conducteurs | |
| BE604973A (fr) | Procédé de fabrication de mélamine | |
| FR1369601A (fr) | Procédé perfectionné de fabrication de semi-conducteurs | |
| FR1289336A (fr) | Procédé de fabrication de dispositifs semi-conducteurs | |
| FR1316220A (fr) | Procédé de fabrication des semi-conducteurs | |
| FR1300095A (fr) | Procédé de fabrication de vannes | |
| FR1316609A (fr) | Procédé de fabrication de coudes | |
| CH398517A (fr) | Procédé de fabrication de corindon | |
| FR1324772A (fr) | Procédé de fabrication de dispositifs semi-conducteurs | |
| FR1298276A (fr) | Procédé de fabrication de mélamine | |
| FR1268742A (fr) | Procédé de fabrication de semiconducteurs | |
| FR1286474A (fr) | Procédé de fabrication de dispositifs semi-conducteurs | |
| FR1289394A (fr) | Procédé de fabrication de dispositifs semi-conducteurs |