GB1002697A - Improvements in or relating to the production of planar semi-conductor surfaces - Google Patents

Improvements in or relating to the production of planar semi-conductor surfaces

Info

Publication number
GB1002697A
GB1002697A GB15105/62A GB1510562A GB1002697A GB 1002697 A GB1002697 A GB 1002697A GB 15105/62 A GB15105/62 A GB 15105/62A GB 1510562 A GB1510562 A GB 1510562A GB 1002697 A GB1002697 A GB 1002697A
Authority
GB
United Kingdom
Prior art keywords
semi
support
conductor
base
heated
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB15105/62A
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Siemens Schuckertwerke AG
Siemens AG
Original Assignee
Siemens Schuckertwerke AG
Siemens AG
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Siemens Schuckertwerke AG, Siemens AG filed Critical Siemens Schuckertwerke AG
Publication of GB1002697A publication Critical patent/GB1002697A/en
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02612—Formation types
    • H01L21/02617—Deposition types
    • H01L21/0262—Reduction or decomposition of gaseous compounds, e.g. CVD
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02524—Group 14 semiconducting materials
    • H01L21/02532—Silicon, silicon germanium, germanium

Abstract

A plane semi-conductor surface is produced by deposition of a semi-conductor material from the gas phase on to a monocrystalline support wherein the surface upon which growth takes place is normal to the direction in which the monocrystalline was grown. The semi-conductor may be Si, Ge or an AIIIBV compound, e.g. InSb. The gaseous semi-conductor material is exemplified by SiCl4, SiCl3H, SiCl2H2, SiBr4, SiI4, SiH4 and Si(C2H5)4\t together with H2 as a carrier. The support crystal is cut from an Si rod pulled in the [100] direction. The support crystal may be prepared by grinding, polishing and etching, e.g. in aqueous HF+ HNO3, and finally heated in H2 at 1100-1400 DEG C. The support may be mounted on a base, e.g. of Si heated using high frequency induction. The base may also be polished or covered with a layer of SiC or Si3N4.ALSO:A plane semi-conductor surface is produced by deposition of a semi-conductor material from the gas phase on to a monocrystalline support wherein the surface upon which growth takes place is normal to the direction in which the monocrystal was grown. The semi-conductor may be Si, Ge or an AiiiBv compound, e.g. InSb. The gaseous semi-conductor material is exemplified by SiCl4, SiCl3H, SiCl2H2, SiBr4, SiI4, SiH4 and Si(C2H5)4\t together with H2 as a carrier. The support crystal is cut from an Si rod pulled in the [100] direction. The support crystal may be prepared by grinding, polishing and etching, e.g. in aqueous HF+HNO3, and finally heated in H2 at 1100-1400 DEG C. The support may be mounted on a base, e.g. of Si heated using high frequency induction. The base may also be polished or covered with a layer of SiC or Si3N4.
GB15105/62A 1961-04-22 1962-04-18 Improvements in or relating to the production of planar semi-conductor surfaces Expired GB1002697A (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
DES73615A DE1239669B (en) 1961-04-22 1961-04-22 Process for the production of extremely flat semiconductor surfaces
DES0074875 1961-07-18

Publications (1)

Publication Number Publication Date
GB1002697A true GB1002697A (en) 1965-08-25

Family

ID=25996418

Family Applications (1)

Application Number Title Priority Date Filing Date
GB15105/62A Expired GB1002697A (en) 1961-04-22 1962-04-18 Improvements in or relating to the production of planar semi-conductor surfaces

Country Status (6)

Country Link
US (1) US3200001A (en)
BE (1) BE616590A (en)
CH (1) CH395347A (en)
DE (1) DE1239669B (en)
GB (1) GB1002697A (en)
NL (1) NL277330A (en)

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3325314A (en) * 1961-10-27 1967-06-13 Siemens Ag Semi-conductor product and method for making same
US3379584A (en) * 1964-09-04 1968-04-23 Texas Instruments Inc Semiconductor wafer with at least one epitaxial layer and methods of making same
US3447902A (en) * 1966-04-04 1969-06-03 Motorola Inc Single crystal silicon rods
US3585464A (en) * 1967-10-19 1971-06-15 Ibm Semiconductor device fabrication utilizing {21 100{22 {0 oriented substrate material
NL171309C (en) * 1970-03-02 1983-03-01 Hitachi Ltd METHOD FOR THE MANUFACTURE OF A SEMICONDUCTOR BODY FORMING A SILICONE DIOXIDE LAYER ON A SURFACE OF A SILICONE MONOCRYSTALLINE BODY
JP3444327B2 (en) * 1996-03-04 2003-09-08 信越半導体株式会社 Method for producing silicon single crystal thin film
DE102010040836A1 (en) * 2010-09-15 2012-03-15 Wacker Chemie Ag Process for producing thin silicon rods

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
NL113118C (en) * 1954-05-18 1900-01-01
DE1061745B (en) * 1957-11-28 1959-07-23 Siemens Ag Method and device for aligning a seed crystal when pulling single crystals
DE1150366B (en) * 1958-12-09 1963-06-20 Siemens Ag Process for the production of hyperpure silicon
US2930722A (en) * 1959-02-03 1960-03-29 Bell Telephone Labor Inc Method of treating silicon

Also Published As

Publication number Publication date
CH395347A (en) 1965-07-15
DE1239669B (en) 1967-05-03
BE616590A (en) 1962-10-18
NL277330A (en)
US3200001A (en) 1965-08-10

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