BE616590A - Manufacturing process for extra flat semiconductor surfaces - Google Patents

Manufacturing process for extra flat semiconductor surfaces

Info

Publication number
BE616590A
BE616590A BE616590A BE616590A BE616590A BE 616590 A BE616590 A BE 616590A BE 616590 A BE616590 A BE 616590A BE 616590 A BE616590 A BE 616590A BE 616590 A BE616590 A BE 616590A
Authority
BE
Belgium
Prior art keywords
manufacturing process
semiconductor surfaces
flat semiconductor
extra flat
extra
Prior art date
Application number
BE616590A
Other languages
French (fr)
Original Assignee
Siemens Ag
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Siemens Ag filed Critical Siemens Ag
Publication of BE616590A publication Critical patent/BE616590A/en

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02612—Formation types
    • H01L21/02617—Deposition types
    • H01L21/0262—Reduction or decomposition of gaseous compounds, e.g. CVD
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02524—Group 14 semiconducting materials
    • H01L21/02532—Silicon, silicon germanium, germanium

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Chemical Vapour Deposition (AREA)
  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
BE616590A 1961-04-22 1962-04-18 Manufacturing process for extra flat semiconductor surfaces BE616590A (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
DES73615A DE1239669B (en) 1961-04-22 1961-04-22 Process for the production of extremely flat semiconductor surfaces
DES0074875 1961-07-18

Publications (1)

Publication Number Publication Date
BE616590A true BE616590A (en) 1962-10-18

Family

ID=25996418

Family Applications (1)

Application Number Title Priority Date Filing Date
BE616590A BE616590A (en) 1961-04-22 1962-04-18 Manufacturing process for extra flat semiconductor surfaces

Country Status (6)

Country Link
US (1) US3200001A (en)
BE (1) BE616590A (en)
CH (1) CH395347A (en)
DE (1) DE1239669B (en)
GB (1) GB1002697A (en)
NL (1) NL277330A (en)

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3325314A (en) * 1961-10-27 1967-06-13 Siemens Ag Semi-conductor product and method for making same
US3379584A (en) * 1964-09-04 1968-04-23 Texas Instruments Inc Semiconductor wafer with at least one epitaxial layer and methods of making same
US3447902A (en) * 1966-04-04 1969-06-03 Motorola Inc Single crystal silicon rods
US3585464A (en) * 1967-10-19 1971-06-15 Ibm Semiconductor device fabrication utilizing {21 100{22 {0 oriented substrate material
NL171309C (en) * 1970-03-02 1983-03-01 Hitachi Ltd METHOD FOR THE MANUFACTURE OF A SEMICONDUCTOR BODY FORMING A SILICONE DIOXIDE LAYER ON A SURFACE OF A SILICONE MONOCRYSTALLINE BODY
JP3444327B2 (en) * 1996-03-04 2003-09-08 信越半導体株式会社 Method for producing silicon single crystal thin film
DE102010040836A1 (en) * 2010-09-15 2012-03-15 Wacker Chemie Ag Process for producing thin silicon rods

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
NL233004A (en) * 1954-05-18 1900-01-01
DE1061745B (en) * 1957-11-28 1959-07-23 Siemens Ag Method and device for aligning a seed crystal when pulling single crystals
DE1150366B (en) * 1958-12-09 1963-06-20 Siemens Ag Process for the production of hyperpure silicon
US2930722A (en) * 1959-02-03 1960-03-29 Bell Telephone Labor Inc Method of treating silicon

Also Published As

Publication number Publication date
US3200001A (en) 1965-08-10
GB1002697A (en) 1965-08-25
CH395347A (en) 1965-07-15
NL277330A (en)
DE1239669B (en) 1967-05-03

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