CN103820852B - 一种利用盐酸和四氯化硅制备多晶硅的系统及方法 - Google Patents
一种利用盐酸和四氯化硅制备多晶硅的系统及方法 Download PDFInfo
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- CN103820852B CN103820852B CN201410078276.1A CN201410078276A CN103820852B CN 103820852 B CN103820852 B CN 103820852B CN 201410078276 A CN201410078276 A CN 201410078276A CN 103820852 B CN103820852 B CN 103820852B
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- sihcl
- sicl
- polysilicon
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- sih
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- 229910021420 polycrystalline silicon Inorganic materials 0.000 title claims abstract description 120
- 229920005591 polysilicon Polymers 0.000 title claims abstract description 101
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 title claims description 130
- FDNAPBUWERUEDA-UHFFFAOYSA-N silicon tetrachloride Chemical compound Cl[Si](Cl)(Cl)Cl FDNAPBUWERUEDA-UHFFFAOYSA-N 0.000 title claims description 71
- 238000000034 method Methods 0.000 title claims description 36
- 229910003822 SiHCl3 Inorganic materials 0.000 claims abstract description 160
- 238000003786 synthesis reaction Methods 0.000 claims abstract description 94
- 229910003910 SiCl4 Inorganic materials 0.000 claims abstract description 93
- 239000012535 impurity Substances 0.000 claims abstract description 88
- 238000006243 chemical reaction Methods 0.000 claims abstract description 79
- 239000005046 Chlorosilane Substances 0.000 claims abstract description 67
- KOPOQZFJUQMUML-UHFFFAOYSA-N chlorosilane Chemical compound Cl[SiH3] KOPOQZFJUQMUML-UHFFFAOYSA-N 0.000 claims abstract description 67
- 239000012043 crude product Substances 0.000 claims abstract description 62
- 229910003818 SiH2Cl2 Inorganic materials 0.000 claims abstract description 59
- 238000002360 preparation method Methods 0.000 claims abstract description 58
- 239000000203 mixture Substances 0.000 claims abstract description 50
- 238000000926 separation method Methods 0.000 claims abstract description 39
- 230000015572 biosynthetic process Effects 0.000 claims abstract description 35
- ZDHXKXAHOVTTAH-UHFFFAOYSA-N trichlorosilane Chemical compound Cl[SiH](Cl)Cl ZDHXKXAHOVTTAH-UHFFFAOYSA-N 0.000 claims abstract description 25
- 239000005052 trichlorosilane Substances 0.000 claims abstract description 25
- 230000009467 reduction Effects 0.000 claims abstract description 23
- 239000000047 product Substances 0.000 claims abstract description 21
- 238000005984 hydrogenation reaction Methods 0.000 claims abstract description 16
- 238000000746 purification Methods 0.000 claims abstract description 15
- VXEGSRKPIUDPQT-UHFFFAOYSA-N 4-[4-(4-methoxyphenyl)piperazin-1-yl]aniline Chemical compound C1=CC(OC)=CC=C1N1CCN(C=2C=CC(N)=CC=2)CC1 VXEGSRKPIUDPQT-UHFFFAOYSA-N 0.000 claims abstract description 14
- 239000005049 silicon tetrachloride Substances 0.000 claims abstract description 14
- 239000007789 gas Substances 0.000 claims description 77
- SLLGVCUQYRMELA-UHFFFAOYSA-N chlorosilicon Chemical compound Cl[Si] SLLGVCUQYRMELA-UHFFFAOYSA-N 0.000 claims description 33
- 229910021487 silica fume Inorganic materials 0.000 claims description 25
- 238000007599 discharging Methods 0.000 claims description 13
- 230000003197 catalytic effect Effects 0.000 claims description 11
- 239000011347 resin Substances 0.000 claims description 10
- 229920005989 resin Polymers 0.000 claims description 10
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 claims description 8
- 238000006555 catalytic reaction Methods 0.000 claims description 8
- 229910052739 hydrogen Inorganic materials 0.000 claims description 8
- 239000001257 hydrogen Substances 0.000 claims description 8
- 230000004044 response Effects 0.000 claims description 7
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 4
- 229910052710 silicon Inorganic materials 0.000 claims description 4
- 239000010703 silicon Substances 0.000 claims description 4
- 239000013078 crystal Substances 0.000 claims description 2
- HICCMIMHFYBSJX-UHFFFAOYSA-N [SiH4].[Cl] Chemical compound [SiH4].[Cl] HICCMIMHFYBSJX-UHFFFAOYSA-N 0.000 claims 1
- 239000000463 material Substances 0.000 abstract description 20
- 239000002994 raw material Substances 0.000 abstract description 14
- 229910000041 hydrogen chloride Inorganic materials 0.000 description 51
- IXCSERBJSXMMFS-UHFFFAOYSA-N hydrogen chloride Substances Cl.Cl IXCSERBJSXMMFS-UHFFFAOYSA-N 0.000 description 51
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 12
- 239000000126 substance Substances 0.000 description 10
- 239000007795 chemical reaction product Substances 0.000 description 9
- 238000004519 manufacturing process Methods 0.000 description 8
- 239000000460 chlorine Substances 0.000 description 7
- 239000012530 fluid Substances 0.000 description 7
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 6
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 6
- 229910052796 boron Inorganic materials 0.000 description 6
- 239000006227 byproduct Substances 0.000 description 6
- 229910052698 phosphorus Inorganic materials 0.000 description 6
- 239000011574 phosphorus Substances 0.000 description 6
- 230000008569 process Effects 0.000 description 6
- 239000000377 silicon dioxide Substances 0.000 description 6
- ZAMOUSCENKQFHK-UHFFFAOYSA-N Chlorine atom Chemical compound [Cl] ZAMOUSCENKQFHK-UHFFFAOYSA-N 0.000 description 5
- 229910052801 chlorine Inorganic materials 0.000 description 5
- 238000011084 recovery Methods 0.000 description 5
- 230000008859 change Effects 0.000 description 4
- 230000005611 electricity Effects 0.000 description 4
- 238000005516 engineering process Methods 0.000 description 4
- 238000002203 pretreatment Methods 0.000 description 4
- 238000001179 sorption measurement Methods 0.000 description 4
- 238000012546 transfer Methods 0.000 description 4
- 229910021431 alpha silicon carbide Inorganic materials 0.000 description 3
- 238000009833 condensation Methods 0.000 description 3
- 230000005494 condensation Effects 0.000 description 3
- 239000003517 fume Substances 0.000 description 3
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 2
- 229910000975 Carbon steel Inorganic materials 0.000 description 2
- 229910003978 SiClx Inorganic materials 0.000 description 2
- 229910000831 Steel Inorganic materials 0.000 description 2
- 230000009286 beneficial effect Effects 0.000 description 2
- 230000008901 benefit Effects 0.000 description 2
- 229910052799 carbon Inorganic materials 0.000 description 2
- 239000010962 carbon steel Substances 0.000 description 2
- 238000013461 design Methods 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 235000013312 flour Nutrition 0.000 description 2
- 230000006872 improvement Effects 0.000 description 2
- 239000010959 steel Substances 0.000 description 2
- 238000012360 testing method Methods 0.000 description 2
- 235000013619 trace mineral Nutrition 0.000 description 2
- 239000011573 trace mineral Substances 0.000 description 2
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 2
- POFAUXBEMGMSAV-UHFFFAOYSA-N [Si].[Cl] Chemical compound [Si].[Cl] POFAUXBEMGMSAV-UHFFFAOYSA-N 0.000 description 1
- 239000002253 acid Substances 0.000 description 1
- 230000002152 alkylating effect Effects 0.000 description 1
- 230000000052 comparative effect Effects 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 238000005260 corrosion Methods 0.000 description 1
- 230000007797 corrosion Effects 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- MROCJMGDEKINLD-UHFFFAOYSA-N dichlorosilane Chemical compound Cl[SiH2]Cl MROCJMGDEKINLD-UHFFFAOYSA-N 0.000 description 1
- 238000004821 distillation Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005265 energy consumption Methods 0.000 description 1
- 230000007613 environmental effect Effects 0.000 description 1
- 150000002431 hydrogen Chemical class 0.000 description 1
- 238000005272 metallurgy Methods 0.000 description 1
- 238000002156 mixing Methods 0.000 description 1
- 238000004064 recycling Methods 0.000 description 1
- 238000011160 research Methods 0.000 description 1
- 150000003839 salts Chemical class 0.000 description 1
- 238000004073 vulcanization Methods 0.000 description 1
- 239000002699 waste material Substances 0.000 description 1
Abstract
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CN201410078276.1A CN103820852B (zh) | 2014-03-05 | 2014-03-05 | 一种利用盐酸和四氯化硅制备多晶硅的系统及方法 |
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CN104709909B (zh) * | 2015-03-03 | 2017-05-10 | 陕西天宏硅材料有限责任公司 | 一种低能耗多晶硅生产方法 |
CN114573628A (zh) * | 2022-04-13 | 2022-06-03 | 洛阳中硅高科技有限公司 | 胺基硅烷的制备系统和方法 |
CN115771896A (zh) * | 2022-12-26 | 2023-03-10 | 宁夏润阳硅材料科技有限公司 | 一种多晶硅的生产还原方法及多晶硅 |
Citations (7)
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CN101780956A (zh) * | 2010-03-03 | 2010-07-21 | 清华大学 | 采用流化床反应器制备高纯度多晶硅颗粒的方法及装置 |
CN102030329A (zh) * | 2009-09-29 | 2011-04-27 | 重庆大全新能源有限公司 | 一种多晶硅生产装置及工艺 |
CN102180467A (zh) * | 2010-12-24 | 2011-09-14 | 江苏中能硅业科技发展有限公司 | Gcl法多晶硅生产方法 |
CN102321916A (zh) * | 2011-09-19 | 2012-01-18 | 上海森松新能源设备有限公司 | 多晶硅生产方法及其装置 |
CN102432017A (zh) * | 2010-09-06 | 2012-05-02 | 瓦克化学股份公司 | 生产多晶硅的方法 |
CN102530953A (zh) * | 2010-09-02 | 2012-07-04 | 维塞尔·雷万卡 | 完全利用供料气和全再循环cvd-西门子甲硅烷反应器法 |
RU2475451C1 (ru) * | 2011-10-26 | 2013-02-20 | Общество с ограниченной ответственностью "КОНТИНЕНТ ЭНЕРДЖИ" | Способ получения поликристаллического кремния |
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JPH02172811A (ja) * | 1988-12-26 | 1990-07-04 | Mitsubishi Kakoki Kaisha Ltd | トリクロロシランの製造方法 |
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Patent Citations (7)
Publication number | Priority date | Publication date | Assignee | Title |
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CN102030329A (zh) * | 2009-09-29 | 2011-04-27 | 重庆大全新能源有限公司 | 一种多晶硅生产装置及工艺 |
CN101780956A (zh) * | 2010-03-03 | 2010-07-21 | 清华大学 | 采用流化床反应器制备高纯度多晶硅颗粒的方法及装置 |
CN102530953A (zh) * | 2010-09-02 | 2012-07-04 | 维塞尔·雷万卡 | 完全利用供料气和全再循环cvd-西门子甲硅烷反应器法 |
CN102432017A (zh) * | 2010-09-06 | 2012-05-02 | 瓦克化学股份公司 | 生产多晶硅的方法 |
CN102180467A (zh) * | 2010-12-24 | 2011-09-14 | 江苏中能硅业科技发展有限公司 | Gcl法多晶硅生产方法 |
CN102321916A (zh) * | 2011-09-19 | 2012-01-18 | 上海森松新能源设备有限公司 | 多晶硅生产方法及其装置 |
RU2475451C1 (ru) * | 2011-10-26 | 2013-02-20 | Общество с ограниченной ответственностью "КОНТИНЕНТ ЭНЕРДЖИ" | Способ получения поликристаллического кремния |
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Address after: 401221 No. 33, Qixin Avenue, Chongqing (Changshou) economic and Technological Development Zone Patentee after: Chongqing Huasheng Chemical Co.,Ltd. Address before: 401221 No. 33, Qixin Avenue, Chongqing (Changshou) economic and Technological Development Zone Patentee before: CHONGQING HAIZHOU CHEMICAL Co.,Ltd. |
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Effective date of registration: 20211117 Address after: 314000 04, No. 5, tongerbao street, No. 1, Nanmen Gongnong Road, Chongfu Town, Tongxiang City, Jiaxing City, Zhejiang Province Patentee after: Jiaxing Zhuoshi Biotechnology Co.,Ltd. Address before: 401221 No. 33, Qixin Avenue, Chongqing (Changshou) economic and Technological Development Zone Patentee before: Chongqing Huasheng Chemical Co.,Ltd. |