JPS5730376A - Manufacture of schottky barrier fet - Google Patents

Manufacture of schottky barrier fet

Info

Publication number
JPS5730376A
JPS5730376A JP10487180A JP10487180A JPS5730376A JP S5730376 A JPS5730376 A JP S5730376A JP 10487180 A JP10487180 A JP 10487180A JP 10487180 A JP10487180 A JP 10487180A JP S5730376 A JPS5730376 A JP S5730376A
Authority
JP
Japan
Prior art keywords
thin film
layer
film
etched
mask
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP10487180A
Other languages
English (en)
Japanese (ja)
Other versions
JPS6222536B2 (en:Method
Inventor
Toshio Usui
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP10487180A priority Critical patent/JPS5730376A/ja
Publication of JPS5730376A publication Critical patent/JPS5730376A/ja
Publication of JPS6222536B2 publication Critical patent/JPS6222536B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H10D64/011—

Landscapes

  • Junction Field-Effect Transistors (AREA)
  • Electrodes Of Semiconductors (AREA)
JP10487180A 1980-07-30 1980-07-30 Manufacture of schottky barrier fet Granted JPS5730376A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP10487180A JPS5730376A (en) 1980-07-30 1980-07-30 Manufacture of schottky barrier fet

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP10487180A JPS5730376A (en) 1980-07-30 1980-07-30 Manufacture of schottky barrier fet

Publications (2)

Publication Number Publication Date
JPS5730376A true JPS5730376A (en) 1982-02-18
JPS6222536B2 JPS6222536B2 (en:Method) 1987-05-19

Family

ID=14392278

Family Applications (1)

Application Number Title Priority Date Filing Date
JP10487180A Granted JPS5730376A (en) 1980-07-30 1980-07-30 Manufacture of schottky barrier fet

Country Status (1)

Country Link
JP (1) JPS5730376A (en:Method)

Cited By (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS58178571A (ja) * 1982-04-14 1983-10-19 Nec Corp 半導体装置
JPS5929463A (ja) * 1982-08-12 1984-02-16 Nec Corp 半導体装置の製造方法
JPS5947771A (ja) * 1982-09-10 1984-03-17 Nec Corp 半導体製造方法
JPS59224176A (ja) * 1983-06-03 1984-12-17 Nec Corp 電界効果トランジスタの製造方法
US4670090A (en) * 1986-01-23 1987-06-02 Rockwell International Corporation Method for producing a field effect transistor
JPS63138776A (ja) * 1986-12-01 1988-06-10 Hitachi Ltd 半導体装置
JP2020123609A (ja) * 2019-01-29 2020-08-13 日亜化学工業株式会社 発光素子の製造方法
US11948797B2 (en) 2019-04-26 2024-04-02 Mitsubishi Electric Corporation Method for manufacturing semiconductor device

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS4924368A (en:Method) * 1972-06-27 1974-03-04

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS4924368A (en:Method) * 1972-06-27 1974-03-04

Cited By (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS58178571A (ja) * 1982-04-14 1983-10-19 Nec Corp 半導体装置
JPS5929463A (ja) * 1982-08-12 1984-02-16 Nec Corp 半導体装置の製造方法
JPS5947771A (ja) * 1982-09-10 1984-03-17 Nec Corp 半導体製造方法
JPS59224176A (ja) * 1983-06-03 1984-12-17 Nec Corp 電界効果トランジスタの製造方法
US4670090A (en) * 1986-01-23 1987-06-02 Rockwell International Corporation Method for producing a field effect transistor
JPS63138776A (ja) * 1986-12-01 1988-06-10 Hitachi Ltd 半導体装置
JP2020123609A (ja) * 2019-01-29 2020-08-13 日亜化学工業株式会社 発光素子の製造方法
US11296255B2 (en) 2019-01-29 2022-04-05 Nichia Corporation Manufacturing method of light-emitting element
US11948797B2 (en) 2019-04-26 2024-04-02 Mitsubishi Electric Corporation Method for manufacturing semiconductor device

Also Published As

Publication number Publication date
JPS6222536B2 (en:Method) 1987-05-19

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