JPS57149748A - Treating device for substrate - Google Patents

Treating device for substrate

Info

Publication number
JPS57149748A
JPS57149748A JP3574381A JP3574381A JPS57149748A JP S57149748 A JPS57149748 A JP S57149748A JP 3574381 A JP3574381 A JP 3574381A JP 3574381 A JP3574381 A JP 3574381A JP S57149748 A JPS57149748 A JP S57149748A
Authority
JP
Japan
Prior art keywords
chamber
substrate
conveyor belt
substrates
cassette
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP3574381A
Other languages
English (en)
Japanese (ja)
Other versions
JPS6130030B2 (enrdf_load_stackoverflow
Inventor
Nobuyuki Takahashi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Canon Anelva Corp
Original Assignee
Anelva Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Anelva Corp filed Critical Anelva Corp
Priority to JP3574381A priority Critical patent/JPS57149748A/ja
Publication of JPS57149748A publication Critical patent/JPS57149748A/ja
Publication of JPS6130030B2 publication Critical patent/JPS6130030B2/ja
Granted legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B33/00—After-treatment of single crystals or homogeneous polycrystalline material with defined structure

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Physical Vapour Deposition (AREA)
  • Drying Of Semiconductors (AREA)
JP3574381A 1981-03-12 1981-03-12 Treating device for substrate Granted JPS57149748A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP3574381A JPS57149748A (en) 1981-03-12 1981-03-12 Treating device for substrate

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP3574381A JPS57149748A (en) 1981-03-12 1981-03-12 Treating device for substrate

Publications (2)

Publication Number Publication Date
JPS57149748A true JPS57149748A (en) 1982-09-16
JPS6130030B2 JPS6130030B2 (enrdf_load_stackoverflow) 1986-07-10

Family

ID=12450296

Family Applications (1)

Application Number Title Priority Date Filing Date
JP3574381A Granted JPS57149748A (en) 1981-03-12 1981-03-12 Treating device for substrate

Country Status (1)

Country Link
JP (1) JPS57149748A (enrdf_load_stackoverflow)

Cited By (44)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60115216A (ja) * 1983-11-28 1985-06-21 Hitachi Ltd 真空処理方法及び装置
JPS60150633A (ja) * 1984-01-18 1985-08-08 Kokusai Electric Co Ltd プラズマエツチング装置のロ−ドロツク室
JPS60198810A (ja) * 1984-03-23 1985-10-08 Matsushita Electric Ind Co Ltd 高周波薄膜生成装置
JPS60211856A (ja) * 1984-03-09 1985-10-24 テーガル・コーポレーション 物品処理方法及びウエハ処理方法
JPS60249328A (ja) * 1984-05-25 1985-12-10 Kokusai Electric Co Ltd 半導体ウエ−ハ用ドライエツチング・化学気相生成装置
JPS60253227A (ja) * 1984-05-30 1985-12-13 Hitachi Ltd 連続スパツタ装置
JPS6179230A (ja) * 1984-09-27 1986-04-22 Agency Of Ind Science & Technol 半導体基板の処理方法
JPS6195887A (ja) * 1984-10-16 1986-05-14 インタ−ナショナル　ビジネス　マシ−ンズ　コ−ポレ−ション 真空内の移動装置
JPS6222420A (ja) * 1985-07-23 1987-01-30 Canon Inc 堆積膜形成装置
JPS6289881A (ja) * 1985-10-16 1987-04-24 Hitachi Ltd スパツタ装置
JPS62128518A (ja) * 1985-11-29 1987-06-10 Matsushita Electric Ind Co Ltd 気相成長装置
JPS62165323A (ja) * 1986-01-15 1987-07-21 Canon Inc 堆積膜形成装置
JPS62222625A (ja) * 1986-03-25 1987-09-30 Shimizu Constr Co Ltd 半導体製造装置
JPS6332931A (ja) * 1986-04-18 1988-02-12 ジエネラル・シグナル・コ−ポレ−シヨン プラズマ・エツチング・システム
JPS6387737A (ja) * 1986-10-01 1988-04-19 Ulvac Corp ウエハ搬送装置
JPS6399524A (ja) * 1986-10-16 1988-04-30 Matsushita Electric Ind Co Ltd 結晶成長装置
JPS63133532A (ja) * 1986-10-24 1988-06-06 ゼネラル　シグナル　コーポレーション 四重処理用プロセッサ
JPH01117022A (ja) * 1987-10-29 1989-05-09 Toshiba Ceramics Co Ltd 半導体ウェーハの縦型熱処理装置
JPH01253237A (ja) * 1988-03-31 1989-10-09 Anelva Corp 真空処理装置
JPH0234789A (ja) * 1988-07-21 1990-02-05 Hitachi Electron Eng Co Ltd 気相反応装置
JPH02192752A (ja) * 1989-01-20 1990-07-30 Tokyo Electron Ltd 半導体製造装置
JPH03101247A (ja) * 1988-11-30 1991-04-26 Tokyo Electron Ltd 処理装置
JPH04137613A (ja) * 1990-09-28 1992-05-12 Handotai Process Kenkyusho:Kk 半導体装置の製造装置
JPH04226049A (ja) * 1985-10-24 1992-08-14 Texas Instr Inc <Ti> ウェーハ処理モジュールとウェーハ処理方法
JPH05315288A (ja) * 1991-09-06 1993-11-26 Hitachi Ltd 低温ドライエッチング装置
US5308431A (en) * 1986-04-18 1994-05-03 General Signal Corporation System providing multiple processing of substrates
JPH06140333A (ja) * 1991-06-14 1994-05-20 Semiconductor Energy Lab Co Ltd プラズマ処理装置のクリーニング方法
JPH0650345U (ja) * 1992-12-01 1994-07-08 光洋リンドバーグ株式会社 多室式半導体処理装置
JPH06268045A (ja) * 1985-10-24 1994-09-22 Texas Instr Inc <Ti> 集積回路の製造方法
JPH08195348A (ja) * 1995-08-28 1996-07-30 Semiconductor Energy Lab Co Ltd 半導体装置製造装置
JPH08213373A (ja) * 1995-10-27 1996-08-20 Hitachi Ltd プラズマ処理方法及びその装置
JPH08227928A (ja) * 1988-02-12 1996-09-03 Tokyo Electron Ltd レジスト処理装置及びレジスト処理方法
JPH08227927A (ja) * 1988-02-12 1996-09-03 Tokyo Electron Ltd 処理装置
JPH08241917A (ja) * 1995-12-14 1996-09-17 Hitachi Ltd 基板の真空処理方法及び基板真空処理装置
JPH08241867A (ja) * 1995-12-01 1996-09-17 Semiconductor Energy Lab Co Ltd プラズマ処理装置およびプラズマ処理方法
JPH08250573A (ja) * 1995-12-14 1996-09-27 Hitachi Ltd 基板処理装置及び基板処理方法
JPH08255823A (ja) * 1988-02-12 1996-10-01 Tokyo Electron Ltd 処理装置
JPH08298280A (ja) * 1995-12-14 1996-11-12 Hitachi Ltd 真空処理装置
JPH1064977A (ja) * 1997-06-23 1998-03-06 Hitachi Ltd 真空処理装置及び基板の処理方法
US5882165A (en) * 1986-12-19 1999-03-16 Applied Materials, Inc. Multiple chamber integrated process system
US6103055A (en) * 1986-04-18 2000-08-15 Applied Materials, Inc. System for processing substrates
US6214119B1 (en) 1986-04-18 2001-04-10 Applied Materials, Inc. Vacuum substrate processing system having multiple processing chambers and a central load/unload chamber
KR100433067B1 (ko) * 2001-01-22 2004-05-27 주식회사 라셈텍 반도체 제조장치
JP2013131542A (ja) * 2011-12-20 2013-07-04 Ulvac Japan Ltd インライン式成膜装置

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH03155619A (ja) * 1989-11-14 1991-07-03 Anelva Corp 真空処理装置

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5763678A (en) * 1980-10-03 1982-04-17 Hitachi Ltd Sputtering device

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5763678A (en) * 1980-10-03 1982-04-17 Hitachi Ltd Sputtering device

Cited By (50)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60115216A (ja) * 1983-11-28 1985-06-21 Hitachi Ltd 真空処理方法及び装置
JPS60150633A (ja) * 1984-01-18 1985-08-08 Kokusai Electric Co Ltd プラズマエツチング装置のロ−ドロツク室
JPS60211856A (ja) * 1984-03-09 1985-10-24 テーガル・コーポレーション 物品処理方法及びウエハ処理方法
JPS60198810A (ja) * 1984-03-23 1985-10-08 Matsushita Electric Ind Co Ltd 高周波薄膜生成装置
JPS60249328A (ja) * 1984-05-25 1985-12-10 Kokusai Electric Co Ltd 半導体ウエ−ハ用ドライエツチング・化学気相生成装置
JPS60253227A (ja) * 1984-05-30 1985-12-13 Hitachi Ltd 連続スパツタ装置
JPS6179230A (ja) * 1984-09-27 1986-04-22 Agency Of Ind Science & Technol 半導体基板の処理方法
JPS6195887A (ja) * 1984-10-16 1986-05-14 インタ−ナショナル　ビジネス　マシ−ンズ　コ−ポレ−ション 真空内の移動装置
JPS6222420A (ja) * 1985-07-23 1987-01-30 Canon Inc 堆積膜形成装置
JPS6289881A (ja) * 1985-10-16 1987-04-24 Hitachi Ltd スパツタ装置
JPH04226049A (ja) * 1985-10-24 1992-08-14 Texas Instr Inc <Ti> ウェーハ処理モジュールとウェーハ処理方法
JPH06268045A (ja) * 1985-10-24 1994-09-22 Texas Instr Inc <Ti> 集積回路の製造方法
JPH0645425A (ja) * 1985-10-24 1994-02-18 Texas Instr Inc <Ti> ウェーハ移送方法及びウェーハ処理モジュール
JPH0629369A (ja) * 1985-10-24 1994-02-04 Texas Instr Inc <Ti> ウェーハ処理ステーション
JPS62128518A (ja) * 1985-11-29 1987-06-10 Matsushita Electric Ind Co Ltd 気相成長装置
JPS62165323A (ja) * 1986-01-15 1987-07-21 Canon Inc 堆積膜形成装置
JPS62222625A (ja) * 1986-03-25 1987-09-30 Shimizu Constr Co Ltd 半導体製造装置
US5344542A (en) * 1986-04-18 1994-09-06 General Signal Corporation Multiple-processing and contamination-free plasma etching system
US6103055A (en) * 1986-04-18 2000-08-15 Applied Materials, Inc. System for processing substrates
US6214119B1 (en) 1986-04-18 2001-04-10 Applied Materials, Inc. Vacuum substrate processing system having multiple processing chambers and a central load/unload chamber
US6413320B2 (en) 1986-04-18 2002-07-02 Applied Materials, Inc. Integrated processing system having multiple reactors connected to a central chamber
JPS6332931A (ja) * 1986-04-18 1988-02-12 ジエネラル・シグナル・コ−ポレ−シヨン プラズマ・エツチング・システム
US6776846B2 (en) 1986-04-18 2004-08-17 Applied Materials, Inc. Integrated processing system having multiple reactors connected to a central chamber
JPH07183282A (ja) * 1986-04-18 1995-07-21 General Signal Corp プラズマ・エッチング装置
US5308431A (en) * 1986-04-18 1994-05-03 General Signal Corporation System providing multiple processing of substrates
JPS6387737A (ja) * 1986-10-01 1988-04-19 Ulvac Corp ウエハ搬送装置
JPS6399524A (ja) * 1986-10-16 1988-04-30 Matsushita Electric Ind Co Ltd 結晶成長装置
JPS63133532A (ja) * 1986-10-24 1988-06-06 ゼネラル　シグナル　コーポレーション 四重処理用プロセッサ
US5882165A (en) * 1986-12-19 1999-03-16 Applied Materials, Inc. Multiple chamber integrated process system
JPH01117022A (ja) * 1987-10-29 1989-05-09 Toshiba Ceramics Co Ltd 半導体ウェーハの縦型熱処理装置
JPH08227928A (ja) * 1988-02-12 1996-09-03 Tokyo Electron Ltd レジスト処理装置及びレジスト処理方法
JPH08227927A (ja) * 1988-02-12 1996-09-03 Tokyo Electron Ltd 処理装置
JPH08255823A (ja) * 1988-02-12 1996-10-01 Tokyo Electron Ltd 処理装置
JPH01253237A (ja) * 1988-03-31 1989-10-09 Anelva Corp 真空処理装置
JPH0234789A (ja) * 1988-07-21 1990-02-05 Hitachi Electron Eng Co Ltd 気相反応装置
JPH03101247A (ja) * 1988-11-30 1991-04-26 Tokyo Electron Ltd 処理装置
JPH02192752A (ja) * 1989-01-20 1990-07-30 Tokyo Electron Ltd 半導体製造装置
JPH04137613A (ja) * 1990-09-28 1992-05-12 Handotai Process Kenkyusho:Kk 半導体装置の製造装置
JPH06140333A (ja) * 1991-06-14 1994-05-20 Semiconductor Energy Lab Co Ltd プラズマ処理装置のクリーニング方法
JPH05315288A (ja) * 1991-09-06 1993-11-26 Hitachi Ltd 低温ドライエッチング装置
JPH0650345U (ja) * 1992-12-01 1994-07-08 光洋リンドバーグ株式会社 多室式半導体処理装置
JPH08195348A (ja) * 1995-08-28 1996-07-30 Semiconductor Energy Lab Co Ltd 半導体装置製造装置
JPH08213373A (ja) * 1995-10-27 1996-08-20 Hitachi Ltd プラズマ処理方法及びその装置
JPH08241867A (ja) * 1995-12-01 1996-09-17 Semiconductor Energy Lab Co Ltd プラズマ処理装置およびプラズマ処理方法
JPH08298280A (ja) * 1995-12-14 1996-11-12 Hitachi Ltd 真空処理装置
JPH08250573A (ja) * 1995-12-14 1996-09-27 Hitachi Ltd 基板処理装置及び基板処理方法
JPH08241917A (ja) * 1995-12-14 1996-09-17 Hitachi Ltd 基板の真空処理方法及び基板真空処理装置
JPH1064977A (ja) * 1997-06-23 1998-03-06 Hitachi Ltd 真空処理装置及び基板の処理方法
KR100433067B1 (ko) * 2001-01-22 2004-05-27 주식회사 라셈텍 반도체 제조장치
JP2013131542A (ja) * 2011-12-20 2013-07-04 Ulvac Japan Ltd インライン式成膜装置

Also Published As

Publication number Publication date
JPS6130030B2 (enrdf_load_stackoverflow) 1986-07-10

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