JPS57149748A - Treating device for substrate - Google Patents

Treating device for substrate

Info

Publication number
JPS57149748A
JPS57149748A JP3574381A JP3574381A JPS57149748A JP S57149748 A JPS57149748 A JP S57149748A JP 3574381 A JP3574381 A JP 3574381A JP 3574381 A JP3574381 A JP 3574381A JP S57149748 A JPS57149748 A JP S57149748A
Authority
JP
Japan
Prior art keywords
chamber
substrate
conveyor belt
substrates
cassette
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP3574381A
Other languages
Japanese (ja)
Other versions
JPS6130030B2 (en
Inventor
Nobuyuki Takahashi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Canon Anelva Corp
Original Assignee
Anelva Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Anelva Corp filed Critical Anelva Corp
Priority to JP3574381A priority Critical patent/JPS57149748A/en
Publication of JPS57149748A publication Critical patent/JPS57149748A/en
Publication of JPS6130030B2 publication Critical patent/JPS6130030B2/ja
Granted legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B33/00—After-treatment of single crystals or homogeneous polycrystalline material with defined structure

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Physical Vapour Deposition (AREA)
  • Drying Of Semiconductors (AREA)

Abstract

PURPOSE:To increase a space factor while improving working property by forming a film forming device to the substrate through the combination of the rotary motion of a plane besides movement on a belt and delivering the substrate among these parts through the vertical motion of a seat on which the substrate is loaded. CONSTITUTION:The substrate treating device is formed by a substrate charging chamber 1, a pre-treatment chamber 2, a treatment chamber 3 and a substrate extracting chamber 4, sealing valves 7, 10, 12 are each mounted to these connecting sections, and the insides of the chambers 2, 3 are brought to vacuum conditions by means of a vacuum pump separately set up during treatment. The device is formed in this manner, a cassette 6 housing a plurality of the substrates 5 to be treated is admitted into the chamber 1, the substrates 5 are sent into the chamber 2 incorporating an etching electrode 8, a heating jig 9, a rotary arm 19 and an oscillating conveyor belt 20 by means of the conveyor belt 14 at every one sheet, and necessary etching, etc. are conducted. The substrates 5 are transported onto the conveyor belt 16 of the next chamber 3 by means of an oscillating conveyor belt 20', films are formed by means of the film forming device 11 here, and the substrates are received into a cassette 13 in the next chamber 4 by using the conveyor belt 17.
JP3574381A 1981-03-12 1981-03-12 Treating device for substrate Granted JPS57149748A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP3574381A JPS57149748A (en) 1981-03-12 1981-03-12 Treating device for substrate

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP3574381A JPS57149748A (en) 1981-03-12 1981-03-12 Treating device for substrate

Publications (2)

Publication Number Publication Date
JPS57149748A true JPS57149748A (en) 1982-09-16
JPS6130030B2 JPS6130030B2 (en) 1986-07-10

Family

ID=12450296

Family Applications (1)

Application Number Title Priority Date Filing Date
JP3574381A Granted JPS57149748A (en) 1981-03-12 1981-03-12 Treating device for substrate

Country Status (1)

Country Link
JP (1) JPS57149748A (en)

Cited By (44)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60115216A (en) * 1983-11-28 1985-06-21 Hitachi Ltd Vacuum processing apparatus
JPS60150633A (en) * 1984-01-18 1985-08-08 Kokusai Electric Co Ltd Loadlock chamber of plasma etching device
JPS60198810A (en) * 1984-03-23 1985-10-08 Matsushita Electric Ind Co Ltd High frequency thin film producing device
JPS60211856A (en) * 1984-03-09 1985-10-24 テーガル・コーポレーション Module treating machine and method of treating article therein
JPS60249328A (en) * 1984-05-25 1985-12-10 Kokusai Electric Co Ltd Apparatus for dry-etching and chemical vapor-phase growth of semiconductor wafer
JPS60253227A (en) * 1984-05-30 1985-12-13 Hitachi Ltd Continuously sputtering device
JPS6179230A (en) * 1984-09-27 1986-04-22 Agency Of Ind Science & Technol Method for processing semiconductor substrate
JPS6195887A (en) * 1984-10-16 1986-05-14 インタ−ナショナル　ビジネス　マシ−ンズ　コ−ポレ−ション Transporter in vacuum
JPS6222420A (en) * 1985-07-23 1987-01-30 Canon Inc Formation device for deposited film
JPS6289881A (en) * 1985-10-16 1987-04-24 Hitachi Ltd Sputtering device
JPS62128518A (en) * 1985-11-29 1987-06-10 Matsushita Electric Ind Co Ltd Vapor growth equipment
JPS62165323A (en) * 1986-01-15 1987-07-21 Canon Inc Device for formation of deposit film
JPS62222625A (en) * 1986-03-25 1987-09-30 Shimizu Constr Co Ltd Semiconductor manufacturing equipment
JPS6332931A (en) * 1986-04-18 1988-02-12 ジエネラル・シグナル・コ−ポレ−シヨン Plasma etching system
JPS6387737A (en) * 1986-10-01 1988-04-19 Ulvac Corp Wafer transfer system
JPS6399524A (en) * 1986-10-16 1988-04-30 Matsushita Electric Ind Co Ltd Crystal growth apparatus
JPS63133532A (en) * 1986-10-24 1988-06-06 ゼネラル　シグナル　コーポレーション Quadruple treatment processor
JPH01117022A (en) * 1987-10-29 1989-05-09 Toshiba Ceramics Co Ltd Vertical heat-treating equipment for semiconductor wafer
JPH01253237A (en) * 1988-03-31 1989-10-09 Anelva Corp Vacuum processor
JPH0234789A (en) * 1988-07-21 1990-02-05 Hitachi Electron Eng Co Ltd Vapor-phase reactor
JPH02192752A (en) * 1989-01-20 1990-07-30 Tokyo Electron Ltd Semiconductor manufacturing equipment
JPH03101247A (en) * 1988-11-30 1991-04-26 Tokyo Electron Ltd Resist processor
JPH04137613A (en) * 1990-09-28 1992-05-12 Handotai Process Kenkyusho:Kk Method and apparatus for manufacture of semiconductor device
JPH04226049A (en) * 1985-10-24 1992-08-14 Texas Instr Inc <Ti> Wafer treatment module and wafer treatment method
JPH05315288A (en) * 1991-09-06 1993-11-26 Hitachi Ltd Low-temperature dry etching device
US5308431A (en) * 1986-04-18 1994-05-03 General Signal Corporation System providing multiple processing of substrates
JPH06140333A (en) * 1991-06-14 1994-05-20 Semiconductor Energy Lab Co Ltd Method of cleaning plasma processor
JPH0650345U (en) * 1992-12-01 1994-07-08 光洋リンドバーグ株式会社 Multi-chamber semiconductor processing equipment
JPH06268045A (en) * 1985-10-24 1994-09-22 Texas Instr Inc <Ti> Manufacture of integrated circuit
JPH08195348A (en) * 1995-08-28 1996-07-30 Semiconductor Energy Lab Co Ltd Semiconductor device manufacturing equipment
JPH08213373A (en) * 1995-10-27 1996-08-20 Hitachi Ltd Plasma treating method and its equipment
JPH08227927A (en) * 1988-02-12 1996-09-03 Tokyo Electron Ltd Processing system
JPH08227928A (en) * 1988-02-12 1996-09-03 Tokyo Electron Ltd System and method for processing resist
JPH08241867A (en) * 1995-12-01 1996-09-17 Semiconductor Energy Lab Co Ltd Plasma treatment device and plasma treatment method
JPH08241917A (en) * 1995-12-14 1996-09-17 Hitachi Ltd Vacuum treatment method and device of substrate
JPH08250573A (en) * 1995-12-14 1996-09-27 Hitachi Ltd Apparatus and method for processing substrate
JPH08255823A (en) * 1988-02-12 1996-10-01 Tokyo Electron Ltd Processing device
JPH08298280A (en) * 1995-12-14 1996-11-12 Hitachi Ltd Vacuum processing device
JPH1064977A (en) * 1997-06-23 1998-03-06 Hitachi Ltd Vacuum treatment unit and wafer treatment method
US5882165A (en) * 1986-12-19 1999-03-16 Applied Materials, Inc. Multiple chamber integrated process system
US6103055A (en) * 1986-04-18 2000-08-15 Applied Materials, Inc. System for processing substrates
US6214119B1 (en) 1986-04-18 2001-04-10 Applied Materials, Inc. Vacuum substrate processing system having multiple processing chambers and a central load/unload chamber
KR100433067B1 (en) * 2001-01-22 2004-05-27 주식회사 라셈텍 Semiconducter manufacturing apparatus
JP2013131542A (en) * 2011-12-20 2013-07-04 Ulvac Japan Ltd In-line film forming device

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH047144Y2 (en) * 1986-06-07 1992-02-26
JPH03155619A (en) * 1989-11-14 1991-07-03 Anelva Corp Vacuum processor

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5763678A (en) * 1980-10-03 1982-04-17 Hitachi Ltd Sputtering device

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5763678A (en) * 1980-10-03 1982-04-17 Hitachi Ltd Sputtering device

Cited By (54)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60115216A (en) * 1983-11-28 1985-06-21 Hitachi Ltd Vacuum processing apparatus
JPS60150633A (en) * 1984-01-18 1985-08-08 Kokusai Electric Co Ltd Loadlock chamber of plasma etching device
JPS60211856A (en) * 1984-03-09 1985-10-24 テーガル・コーポレーション Module treating machine and method of treating article therein
JPS60198810A (en) * 1984-03-23 1985-10-08 Matsushita Electric Ind Co Ltd High frequency thin film producing device
JPH0556646B2 (en) * 1984-03-23 1993-08-20 Matsushita Electric Ind Co Ltd
JPS60249328A (en) * 1984-05-25 1985-12-10 Kokusai Electric Co Ltd Apparatus for dry-etching and chemical vapor-phase growth of semiconductor wafer
JPS60253227A (en) * 1984-05-30 1985-12-13 Hitachi Ltd Continuously sputtering device
JPS6179230A (en) * 1984-09-27 1986-04-22 Agency Of Ind Science & Technol Method for processing semiconductor substrate
JPS6195887A (en) * 1984-10-16 1986-05-14 インタ−ナショナル　ビジネス　マシ−ンズ　コ−ポレ−ション Transporter in vacuum
JPS6222420A (en) * 1985-07-23 1987-01-30 Canon Inc Formation device for deposited film
JPS6289881A (en) * 1985-10-16 1987-04-24 Hitachi Ltd Sputtering device
JPS6350433B2 (en) * 1985-10-16 1988-10-07 Hitachi Ltd
JPH0629369A (en) * 1985-10-24 1994-02-04 Texas Instr Inc <Ti> Wafer treatment station
JPH06268045A (en) * 1985-10-24 1994-09-22 Texas Instr Inc <Ti> Manufacture of integrated circuit
JPH04226049A (en) * 1985-10-24 1992-08-14 Texas Instr Inc <Ti> Wafer treatment module and wafer treatment method
JPH0645425A (en) * 1985-10-24 1994-02-18 Texas Instr Inc <Ti> Wafer transfer method and wafer treatment module
JPS62128518A (en) * 1985-11-29 1987-06-10 Matsushita Electric Ind Co Ltd Vapor growth equipment
JPS62165323A (en) * 1986-01-15 1987-07-21 Canon Inc Device for formation of deposit film
JPS62222625A (en) * 1986-03-25 1987-09-30 Shimizu Constr Co Ltd Semiconductor manufacturing equipment
JPH07183282A (en) * 1986-04-18 1995-07-21 General Signal Corp Plasma etching system
US6103055A (en) * 1986-04-18 2000-08-15 Applied Materials, Inc. System for processing substrates
US5344542A (en) * 1986-04-18 1994-09-06 General Signal Corporation Multiple-processing and contamination-free plasma etching system
US5308431A (en) * 1986-04-18 1994-05-03 General Signal Corporation System providing multiple processing of substrates
US6214119B1 (en) 1986-04-18 2001-04-10 Applied Materials, Inc. Vacuum substrate processing system having multiple processing chambers and a central load/unload chamber
US6413320B2 (en) 1986-04-18 2002-07-02 Applied Materials, Inc. Integrated processing system having multiple reactors connected to a central chamber
US6776846B2 (en) 1986-04-18 2004-08-17 Applied Materials, Inc. Integrated processing system having multiple reactors connected to a central chamber
JPS6332931A (en) * 1986-04-18 1988-02-12 ジエネラル・シグナル・コ−ポレ−シヨン Plasma etching system
JPH0573259B2 (en) * 1986-10-01 1993-10-14 Ulvac Corp
JPS6387737A (en) * 1986-10-01 1988-04-19 Ulvac Corp Wafer transfer system
JPS6399524A (en) * 1986-10-16 1988-04-30 Matsushita Electric Ind Co Ltd Crystal growth apparatus
JPS63133532A (en) * 1986-10-24 1988-06-06 ゼネラル　シグナル　コーポレーション Quadruple treatment processor
US5882165A (en) * 1986-12-19 1999-03-16 Applied Materials, Inc. Multiple chamber integrated process system
JPH01117022A (en) * 1987-10-29 1989-05-09 Toshiba Ceramics Co Ltd Vertical heat-treating equipment for semiconductor wafer
JPH08255823A (en) * 1988-02-12 1996-10-01 Tokyo Electron Ltd Processing device
JPH08227927A (en) * 1988-02-12 1996-09-03 Tokyo Electron Ltd Processing system
JPH08227928A (en) * 1988-02-12 1996-09-03 Tokyo Electron Ltd System and method for processing resist
JPH01253237A (en) * 1988-03-31 1989-10-09 Anelva Corp Vacuum processor
JPH0234789A (en) * 1988-07-21 1990-02-05 Hitachi Electron Eng Co Ltd Vapor-phase reactor
JPH03101247A (en) * 1988-11-30 1991-04-26 Tokyo Electron Ltd Resist processor
JPH02192752A (en) * 1989-01-20 1990-07-30 Tokyo Electron Ltd Semiconductor manufacturing equipment
JPH04137613A (en) * 1990-09-28 1992-05-12 Handotai Process Kenkyusho:Kk Method and apparatus for manufacture of semiconductor device
JPH0673348B2 (en) * 1991-06-14 1994-09-14 株式会社半導体エネルギー研究所 Cleaning method for plasma processing apparatus
JPH06140333A (en) * 1991-06-14 1994-05-20 Semiconductor Energy Lab Co Ltd Method of cleaning plasma processor
JPH05315288A (en) * 1991-09-06 1993-11-26 Hitachi Ltd Low-temperature dry etching device
JPH0650345U (en) * 1992-12-01 1994-07-08 光洋リンドバーグ株式会社 Multi-chamber semiconductor processing equipment
JPH08195348A (en) * 1995-08-28 1996-07-30 Semiconductor Energy Lab Co Ltd Semiconductor device manufacturing equipment
JPH08213373A (en) * 1995-10-27 1996-08-20 Hitachi Ltd Plasma treating method and its equipment
JPH08241867A (en) * 1995-12-01 1996-09-17 Semiconductor Energy Lab Co Ltd Plasma treatment device and plasma treatment method
JPH08241917A (en) * 1995-12-14 1996-09-17 Hitachi Ltd Vacuum treatment method and device of substrate
JPH08250573A (en) * 1995-12-14 1996-09-27 Hitachi Ltd Apparatus and method for processing substrate
JPH08298280A (en) * 1995-12-14 1996-11-12 Hitachi Ltd Vacuum processing device
JPH1064977A (en) * 1997-06-23 1998-03-06 Hitachi Ltd Vacuum treatment unit and wafer treatment method
KR100433067B1 (en) * 2001-01-22 2004-05-27 주식회사 라셈텍 Semiconducter manufacturing apparatus
JP2013131542A (en) * 2011-12-20 2013-07-04 Ulvac Japan Ltd In-line film forming device

Also Published As

Publication number Publication date
JPS6130030B2 (en) 1986-07-10

Similar Documents

Publication Publication Date Title
JPS57149748A (en) Treating device for substrate
GB2272995B (en) Method for making or treating a semiconductor
US4252595A (en) Etching apparatus using a plasma
NO941075D0 (en) Apparatus and method for rapid plasma therapy
US3931789A (en) Vapor deposition apparatus
US4624738A (en) Continuous gas plasma etching apparatus and method
JPS5748226A (en) Plasma processing method and device for the same
JPS5766625A (en) Manufacture of film
FR2650822B1 (en) METHOD FOR DEPOSITING THIN FILMS
JPS6431971A (en) Vacuum treatment device
JPS56161539A (en) Feeding method for photoresist solution
JPS5753933A (en) Manufacture of semiconductor element
JPS57161065A (en) Continuous dry etching method
JPS5571027A (en) Continuous surface treatment apparatus
DE3063461D1 (en) Abrasive blasting machine with several working stations
JPS57134946A (en) Carrying device for semiconductor substrate
JPS5736833A (en) Cleaning of wafer
JPS5471577A (en) Production of semiconductor device
JPS5794338A (en) Vapor deposition device
SU1534424A1 (en) Device for processing diazomaterials
RHODES Static continuous electrophoresis device[Patent]
JPS57199218A (en) Morecular beam epitaxial growth equipment
JPS5275183A (en) Method and apparatus for washing of treating objects
JPS5362476A (en) Processing method of semiconductor surface
JPS57136754A (en) Wafer treating device for ion implanting device