JPS5623784A - Manufacture of semiconductor device - Google Patents

Manufacture of semiconductor device

Info

Publication number
JPS5623784A
JPS5623784A JP9974379A JP9974379A JPS5623784A JP S5623784 A JPS5623784 A JP S5623784A JP 9974379 A JP9974379 A JP 9974379A JP 9974379 A JP9974379 A JP 9974379A JP S5623784 A JPS5623784 A JP S5623784A
Authority
JP
Japan
Prior art keywords
chamber
valve
semiconductor
substrate
laser beam
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP9974379A
Other languages
English (en)
Japanese (ja)
Other versions
JPH0338756B2 (enrdf_load_stackoverflow
Inventor
Shunpei Yamazaki
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Individual
Original Assignee
Individual
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Individual filed Critical Individual
Priority to JP9974379A priority Critical patent/JPS5623784A/ja
Publication of JPS5623784A publication Critical patent/JPS5623784A/ja
Publication of JPH0338756B2 publication Critical patent/JPH0338756B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F71/00—Manufacture or treatment of devices covered by this subclass
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F71/00—Manufacture or treatment of devices covered by this subclass
    • H10F71/137—Batch treatment of the devices
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50—Manufacturing or production processes characterised by the final manufactured product

Landscapes

  • Light Receiving Elements (AREA)
  • Photovoltaic Devices (AREA)
JP9974379A 1979-08-05 1979-08-05 Manufacture of semiconductor device Granted JPS5623784A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP9974379A JPS5623784A (en) 1979-08-05 1979-08-05 Manufacture of semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP9974379A JPS5623784A (en) 1979-08-05 1979-08-05 Manufacture of semiconductor device

Related Child Applications (2)

Application Number Title Priority Date Filing Date
JP60124788A Division JPS6150329A (ja) 1985-06-07 1985-06-07 半導体装置作製方法
JP3033679A Division JPH04211130A (ja) 1991-02-01 1991-02-01 半導体装置作製方法

Publications (2)

Publication Number Publication Date
JPS5623784A true JPS5623784A (en) 1981-03-06
JPH0338756B2 JPH0338756B2 (enrdf_load_stackoverflow) 1991-06-11

Family

ID=14255487

Family Applications (1)

Application Number Title Priority Date Filing Date
JP9974379A Granted JPS5623784A (en) 1979-08-05 1979-08-05 Manufacture of semiconductor device

Country Status (1)

Country Link
JP (1) JPS5623784A (enrdf_load_stackoverflow)

Cited By (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59144122A (ja) * 1983-02-08 1984-08-18 Seiko Epson Corp 光アニ−ル法
JPS59154079A (ja) * 1983-02-22 1984-09-03 Semiconductor Energy Lab Co Ltd 光電変換半導体装置及びその作製方法
JPS59155974A (ja) * 1983-02-25 1984-09-05 Semiconductor Energy Lab Co Ltd 光電変換装置作製方法
JPS60224282A (ja) * 1984-04-20 1985-11-08 Semiconductor Energy Lab Co Ltd 半導体装置の作製方法
JPS60227484A (ja) * 1984-04-26 1985-11-12 Semiconductor Energy Lab Co Ltd 半導体装置作製方法
JPS6158276A (ja) * 1984-08-29 1986-03-25 Semiconductor Energy Lab Co Ltd 半導体装置作製方法
JPS61231771A (ja) * 1985-04-05 1986-10-16 Semiconductor Energy Lab Co Ltd 半導体装置の作製方法
JPS6247116A (ja) * 1985-08-26 1987-02-28 Semiconductor Energy Lab Co Ltd 半導体装置製造装置
JPS6246514A (ja) * 1985-08-24 1987-02-28 Semiconductor Energy Lab Co Ltd 半導体装置作製方法
JPS6251210A (ja) * 1985-08-30 1987-03-05 Semiconductor Energy Lab Co Ltd 半導体装置作製方法
JPS6252924A (ja) * 1985-09-01 1987-03-07 Semiconductor Energy Lab Co Ltd 半導体装置作製方法
JPS6254448A (ja) * 1985-08-02 1987-03-10 Semiconductor Energy Lab Co Ltd 半導体装置測定方法
JPS6254422A (ja) * 1985-08-08 1987-03-10 Semiconductor Energy Lab Co Ltd 半導体装置作製方法
JPS6269608A (ja) * 1985-09-24 1987-03-30 Semiconductor Energy Lab Co Ltd 半導体装置作製方法
JPH0263817A (ja) * 1988-08-31 1990-03-05 Naigai Kaaboninki Kk タックラベル紙の加工方法
JPH03212976A (ja) * 1990-01-18 1991-09-18 Agency Of Ind Science & Technol 透明導電酸化膜を含むｃｉｓ構造の処理方法
JPH03227575A (ja) * 1990-09-14 1991-10-08 Semiconductor Energy Lab Co Ltd 光電変換装置
JP2001168363A (ja) * 1999-12-10 2001-06-22 Toyota Central Res & Dev Lab Inc 太陽電池の製造方法

Cited By (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59144122A (ja) * 1983-02-08 1984-08-18 Seiko Epson Corp 光アニ−ル法
JPS59154079A (ja) * 1983-02-22 1984-09-03 Semiconductor Energy Lab Co Ltd 光電変換半導体装置及びその作製方法
JPS59155974A (ja) * 1983-02-25 1984-09-05 Semiconductor Energy Lab Co Ltd 光電変換装置作製方法
JPS60224282A (ja) * 1984-04-20 1985-11-08 Semiconductor Energy Lab Co Ltd 半導体装置の作製方法
JPS60227484A (ja) * 1984-04-26 1985-11-12 Semiconductor Energy Lab Co Ltd 半導体装置作製方法
JPS6158276A (ja) * 1984-08-29 1986-03-25 Semiconductor Energy Lab Co Ltd 半導体装置作製方法
JPS61231771A (ja) * 1985-04-05 1986-10-16 Semiconductor Energy Lab Co Ltd 半導体装置の作製方法
JPS6254448A (ja) * 1985-08-02 1987-03-10 Semiconductor Energy Lab Co Ltd 半導体装置測定方法
JPS6254422A (ja) * 1985-08-08 1987-03-10 Semiconductor Energy Lab Co Ltd 半導体装置作製方法
JPS6246514A (ja) * 1985-08-24 1987-02-28 Semiconductor Energy Lab Co Ltd 半導体装置作製方法
JPS6247116A (ja) * 1985-08-26 1987-02-28 Semiconductor Energy Lab Co Ltd 半導体装置製造装置
JPS6251210A (ja) * 1985-08-30 1987-03-05 Semiconductor Energy Lab Co Ltd 半導体装置作製方法
JPS6252924A (ja) * 1985-09-01 1987-03-07 Semiconductor Energy Lab Co Ltd 半導体装置作製方法
JPS6269608A (ja) * 1985-09-24 1987-03-30 Semiconductor Energy Lab Co Ltd 半導体装置作製方法
JPH0263817A (ja) * 1988-08-31 1990-03-05 Naigai Kaaboninki Kk タックラベル紙の加工方法
JPH03212976A (ja) * 1990-01-18 1991-09-18 Agency Of Ind Science & Technol 透明導電酸化膜を含むｃｉｓ構造の処理方法
JPH03227575A (ja) * 1990-09-14 1991-10-08 Semiconductor Energy Lab Co Ltd 光電変換装置
JP2001168363A (ja) * 1999-12-10 2001-06-22 Toyota Central Res & Dev Lab Inc 太陽電池の製造方法

Also Published As

Publication number Publication date
JPH0338756B2 (enrdf_load_stackoverflow) 1991-06-11

Similar Documents

Publication Publication Date Title
JPS5623784A (en) Manufacture of semiconductor device
FI884513A0 (fi) Foerfarande foer vaermebehandling av metallkroppar.
NO970966D0 (no) Fremgangsmåte ved varmebehandling av aluminiumlegeringsark
SE7900493L (sv) Interferon och interforonhaltiga beredningar
EP0400631A3 (en) Method for heat treatment of glass plate to strengthen its peripheral region
JPS567436A (en) High pressure treating device
JPS57202729A (en) Manufacture of semiconductor device
JPS5629620A (en) Continuous annealing of cold-rolled steel strip in short time
JPS5648128A (en) Heating treatment
CN105568391B (zh) 一种稀土铥离子注入二氧化钛晶体的制备方法
JPS57160124A (en) Manufacture of thin film material
JPS5735621A (en) Heat treatment installation for metal
JPS57202740A (en) Manufacture of semiconductor device
SU762364A1 (ru) СПОСОБ ПОЛУЧЕНИЯ ОПТИЧЕСКИХ ВОЛНОВОДОВ х?.п7·. 1 б 0 ’ν 1
JPS5568638A (en) Treating method of semiconductor surface with heat
JPS57113233A (en) Manufacture of semiconductor device
JPS53142334A (en) Glow discharge surface treating apparatus
JPS5630721A (en) Diffusing device of selected impurity
JPS5594478A (en) Watch outer decoration part having water repellent film
JPS5711899A (en) Molecular beam epitaxial growth
JPS57167636A (en) Manufacture of semiconductor device
FR2377981A1 (fr) Procede de revetement d'un support de verre et dispositif employe a cet effet
JPS5629337A (en) Formation of silicon nitride film
JPS6454725A (en) Heat treating method for compound semiconductor substrate
JPS5511181A (en) Gas soft nitriding method