JPH0338756B2 - - Google Patents

Info

Publication number
JPH0338756B2
JPH0338756B2 JP54099743A JP9974379A JPH0338756B2 JP H0338756 B2 JPH0338756 B2 JP H0338756B2 JP 54099743 A JP54099743 A JP 54099743A JP 9974379 A JP9974379 A JP 9974379A JP H0338756 B2 JPH0338756 B2 JP H0338756B2
Authority
JP
Japan
Prior art keywords
semiconductor
annealing
hydrogen
electrode
substrate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP54099743A
Other languages
English (en)
Japanese (ja)
Other versions
JPS5623784A (en
Inventor
Shunpei Yamazaki
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Semiconductor Energy Laboratory Co Ltd
Original Assignee
Semiconductor Energy Laboratory Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Semiconductor Energy Laboratory Co Ltd filed Critical Semiconductor Energy Laboratory Co Ltd
Priority to JP9974379A priority Critical patent/JPS5623784A/ja
Publication of JPS5623784A publication Critical patent/JPS5623784A/ja
Publication of JPH0338756B2 publication Critical patent/JPH0338756B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F71/00—Manufacture or treatment of devices covered by this subclass
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F71/00—Manufacture or treatment of devices covered by this subclass
    • H10F71/137—Batch treatment of the devices
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50—Manufacturing or production processes characterised by the final manufactured product

Landscapes

  • Photovoltaic Devices (AREA)
  • Light Receiving Elements (AREA)
JP9974379A 1979-08-05 1979-08-05 Manufacture of semiconductor device Granted JPS5623784A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP9974379A JPS5623784A (en) 1979-08-05 1979-08-05 Manufacture of semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP9974379A JPS5623784A (en) 1979-08-05 1979-08-05 Manufacture of semiconductor device

Related Child Applications (2)

Application Number Title Priority Date Filing Date
JP60124788A Division JPS6150329A (ja) 1985-06-07 1985-06-07 半導体装置作製方法
JP3033679A Division JPH04211130A (ja) 1991-02-01 1991-02-01 半導体装置作製方法

Publications (2)

Publication Number Publication Date
JPS5623784A JPS5623784A (en) 1981-03-06
JPH0338756B2 true JPH0338756B2 (enrdf_load_stackoverflow) 1991-06-11

Family

ID=14255487

Family Applications (1)

Application Number Title Priority Date Filing Date
JP9974379A Granted JPS5623784A (en) 1979-08-05 1979-08-05 Manufacture of semiconductor device

Country Status (1)

Country Link
JP (1) JPS5623784A (enrdf_load_stackoverflow)

Families Citing this family (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59144122A (ja) * 1983-02-08 1984-08-18 Seiko Epson Corp 光アニ−ル法
JPS59154079A (ja) * 1983-02-22 1984-09-03 Semiconductor Energy Lab Co Ltd 光電変換半導体装置及びその作製方法
JPS59155974A (ja) * 1983-02-25 1984-09-05 Semiconductor Energy Lab Co Ltd 光電変換装置作製方法
JPS60224282A (ja) * 1984-04-20 1985-11-08 Semiconductor Energy Lab Co Ltd 半導体装置の作製方法
JPH0693515B2 (ja) * 1984-04-26 1994-11-16 株式会社半導体エネルギー研究所 半導体装置作製方法
JPS6158276A (ja) * 1984-08-29 1986-03-25 Semiconductor Energy Lab Co Ltd 半導体装置作製方法
JPS61231771A (ja) * 1985-04-05 1986-10-16 Semiconductor Energy Lab Co Ltd 半導体装置の作製方法
JPS6254448A (ja) * 1985-08-02 1987-03-10 Semiconductor Energy Lab Co Ltd 半導体装置測定方法
JP2660243B2 (ja) * 1985-08-08 1997-10-08 株式会社半導体エネルギー研究所 半導体装置作製方法
JP2521427B2 (ja) * 1985-08-24 1996-08-07 株式会社 半導体エネルギー研究所 半導体装置作製方法
JPS6247116A (ja) * 1985-08-26 1987-02-28 Semiconductor Energy Lab Co Ltd 半導体装置製造装置
JPS6251210A (ja) * 1985-08-30 1987-03-05 Semiconductor Energy Lab Co Ltd 半導体装置作製方法
JPS6252924A (ja) * 1985-09-01 1987-03-07 Semiconductor Energy Lab Co Ltd 半導体装置作製方法
JPS6269608A (ja) * 1985-09-24 1987-03-30 Semiconductor Energy Lab Co Ltd 半導体装置作製方法
JPH0263817A (ja) * 1988-08-31 1990-03-05 Naigai Kaaboninki Kk タックラベル紙の加工方法
JPH0693514B2 (ja) * 1990-01-18 1994-11-16 工業技術院長 透明導電酸化膜を含むｃｉｓ構造の処理方法
JPH03227575A (ja) * 1990-09-14 1991-10-08 Semiconductor Energy Lab Co Ltd 光電変換装置
JP2001168363A (ja) * 1999-12-10 2001-06-22 Toyota Central Res & Dev Lab Inc 太陽電池の製造方法

Also Published As

Publication number Publication date
JPS5623784A (en) 1981-03-06

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