JPH0525394B2 - - Google Patents

Info

Publication number
JPH0525394B2
JPH0525394B2 JP61296166A JP29616686A JPH0525394B2 JP H0525394 B2 JPH0525394 B2 JP H0525394B2 JP 61296166 A JP61296166 A JP 61296166A JP 29616686 A JP29616686 A JP 29616686A JP H0525394 B2 JPH0525394 B2 JP H0525394B2
Authority
JP
Japan
Prior art keywords
semiconductor
sas
amorphous
current
semi
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP61296166A
Other languages
English (en)
Japanese (ja)
Other versions
JPS62216271A (ja
Inventor
Shunpei Yamazaki
Jujiro Nagata
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Semiconductor Energy Laboratory Co Ltd
Original Assignee
Semiconductor Energy Laboratory Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Semiconductor Energy Laboratory Co Ltd filed Critical Semiconductor Energy Laboratory Co Ltd
Priority to JP61296166A priority Critical patent/JPS62216271A/ja
Publication of JPS62216271A publication Critical patent/JPS62216271A/ja
Publication of JPH0525394B2 publication Critical patent/JPH0525394B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]

Landscapes

  • Element Separation (AREA)
JP61296166A 1986-12-12 1986-12-12 Ｍｉｓ型半導体装置 Granted JPS62216271A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP61296166A JPS62216271A (ja) 1986-12-12 1986-12-12 Ｍｉｓ型半導体装置

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP61296166A JPS62216271A (ja) 1986-12-12 1986-12-12 Ｍｉｓ型半導体装置

Related Parent Applications (1)

Application Number Title Priority Date Filing Date
JP8897480A Division JPS5713777A (en) 1980-03-03 1980-06-30 Semiconductor device and manufacture thereof

Related Child Applications (2)

Application Number Title Priority Date Filing Date
JP6103284A Division JP2785173B2 (ja) 1994-04-19 1994-04-19 Ｍｉｓ型半導体装置
JP6103285A Division JP2626704B2 (ja) 1994-04-19 1994-04-19 Ｍｉｓ型半導体装置作製方法

Publications (2)

Publication Number Publication Date
JPS62216271A JPS62216271A (ja) 1987-09-22
JPH0525394B2 true JPH0525394B2 (enrdf_load_stackoverflow) 1993-04-12

Family

ID=17830012

Family Applications (1)

Application Number Title Priority Date Filing Date
JP61296166A Granted JPS62216271A (ja) 1986-12-12 1986-12-12 Ｍｉｓ型半導体装置

Country Status (1)

Country Link
JP (1) JPS62216271A (enrdf_load_stackoverflow)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6964890B1 (en) 1992-03-17 2005-11-15 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for forming the same
JP2785173B2 (ja) * 1994-04-19 1998-08-13 株式会社半導体エネルギー研究所 Ｍｉｓ型半導体装置
JP2626704B2 (ja) * 1994-04-19 1997-07-02 株式会社 半導体エネルギー研究所 Ｍｉｓ型半導体装置作製方法

Also Published As

Publication number Publication date
JPS62216271A (ja) 1987-09-22

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