JPH0525186B2 - - Google Patents

Info

Publication number
JPH0525186B2
JPH0525186B2 JP59097319A JP9731984A JPH0525186B2 JP H0525186 B2 JPH0525186 B2 JP H0525186B2 JP 59097319 A JP59097319 A JP 59097319A JP 9731984 A JP9731984 A JP 9731984A JP H0525186 B2 JPH0525186 B2 JP H0525186B2
Authority
JP
Japan
Prior art keywords
type
semiconductor
single crystal
photoelectric conversion
junction
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP59097319A
Other languages
English (en)
Japanese (ja)
Other versions
JPS60240168A (ja
Inventor
Shunpei Yamazaki
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Semiconductor Energy Laboratory Co Ltd
Original Assignee
Semiconductor Energy Laboratory Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Semiconductor Energy Laboratory Co Ltd filed Critical Semiconductor Energy Laboratory Co Ltd
Priority to JP59097319A priority Critical patent/JPS60240168A/ja
Publication of JPS60240168A publication Critical patent/JPS60240168A/ja
Priority to US07/277,451 priority patent/US4878097A/en
Priority to US07/303,995 priority patent/US4950614A/en
Priority to US07/321,056 priority patent/US4971919A/en
Priority to US07/336,550 priority patent/US4954856A/en
Priority to US07/536,474 priority patent/US5045482A/en
Publication of JPH0525186B2 publication Critical patent/JPH0525186B2/ja
Priority to US08/310,375 priority patent/US5478777A/en
Priority to US08/527,345 priority patent/US5580820A/en
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F10/00—Individual photovoltaic cells, e.g. solar cells
    • H10F10/10—Individual photovoltaic cells, e.g. solar cells having potential barriers
    • H10F10/17—Photovoltaic cells having only PIN junction potential barriers
    • H10F10/172—Photovoltaic cells having only PIN junction potential barriers comprising multiple PIN junctions, e.g. tandem cells
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/20—Electrodes
    • H10F77/244—Electrodes made of transparent conductive layers, e.g. transparent conductive oxide [TCO] layers
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/547—Monocrystalline silicon PV cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/548—Amorphous silicon PV cells

Landscapes

  • Photovoltaic Devices (AREA)
JP59097319A 1984-05-15 1984-05-15 光電変換装置の作製方法 Granted JPS60240168A (ja)

Priority Applications (8)

Application Number Priority Date Filing Date Title
JP59097319A JPS60240168A (ja) 1984-05-15 1984-05-15 光電変換装置の作製方法
US07/277,451 US4878097A (en) 1984-05-15 1988-10-21 Semiconductor photoelectric conversion device and method for making same
US07/303,995 US4950614A (en) 1984-05-15 1989-01-30 Method of making a tandem type semiconductor photoelectric conversion device
US07/321,056 US4971919A (en) 1984-05-15 1989-03-09 Semiconductor photoelectric conversion device and method of making the same
US07/336,550 US4954856A (en) 1984-05-15 1989-04-10 Semiconductor photoelectric conversion device and method of making the same
US07/536,474 US5045482A (en) 1984-05-15 1990-06-12 Method of making a tandem PIN semiconductor photoelectric conversion device
US08/310,375 US5478777A (en) 1984-05-15 1994-09-22 Method of making a semiconductor photoelectric conversion device having a crystalline I-type layer
US08/527,345 US5580820A (en) 1984-05-15 1995-09-12 Method of forming a semiconductor material having a substantially I-type crystalline layer

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP59097319A JPS60240168A (ja) 1984-05-15 1984-05-15 光電変換装置の作製方法

Related Child Applications (1)

Application Number Title Priority Date Filing Date
JP4193007A Division JPH05206492A (ja) 1992-06-26 1992-06-26 光電変換装置

Publications (2)

Publication Number Publication Date
JPS60240168A JPS60240168A (ja) 1985-11-29
JPH0525186B2 true JPH0525186B2 (enrdf_load_stackoverflow) 1993-04-12

Family

ID=14189162

Family Applications (1)

Application Number Title Priority Date Filing Date
JP59097319A Granted JPS60240168A (ja) 1984-05-15 1984-05-15 光電変換装置の作製方法

Country Status (1)

Country Link
JP (1) JPS60240168A (enrdf_load_stackoverflow)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS62142372A (ja) * 1985-12-17 1987-06-25 Semiconductor Energy Lab Co Ltd 光電変換装置の作製方法
JPS62142373A (ja) * 1985-12-17 1987-06-25 Semiconductor Energy Lab Co Ltd 光電変換半導体装置

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE2938260A1 (de) * 1979-09-21 1981-03-26 Messerschmitt-Bölkow-Blohm GmbH, 8000 München Halbleiterbauelement fuer die umsetzung von licht in elektrische energie
JPS5799729A (en) * 1981-10-20 1982-06-21 Shunpei Yamazaki Manufacture of semi-amorphous semiconductor
JPS58116779A (ja) * 1981-12-29 1983-07-12 Sanyo Electric Co Ltd 光起電力装置
JPS58139478A (ja) * 1982-02-15 1983-08-18 Agency Of Ind Science & Technol アモルフアス太陽電池
JPS58171869A (ja) * 1982-04-02 1983-10-08 Sanyo Electric Co Ltd 光起電力装置

Also Published As

Publication number Publication date
JPS60240168A (ja) 1985-11-29

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