JPS5513938A - Photoelectronic conversion semiconductor device and its manufacturing method - Google Patents

Photoelectronic conversion semiconductor device and its manufacturing method

Info

Publication number
JPS5513938A
JPS5513938A JP8686778A JP8686778A JPS5513938A JP S5513938 A JPS5513938 A JP S5513938A JP 8686778 A JP8686778 A JP 8686778A JP 8686778 A JP8686778 A JP 8686778A JP S5513938 A JPS5513938 A JP S5513938A
Authority
JP
Japan
Prior art keywords
substrate
grown
junction
covered
semiconductor layer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP8686778A
Other languages
English (en)
Inventor
Shunpei Yamazaki
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Individual
Original Assignee
Individual
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Individual filed Critical Individual
Priority to JP8686778A priority Critical patent/JPS5513938A/ja
Priority to US06/058,077 priority patent/US4239554A/en
Publication of JPS5513938A publication Critical patent/JPS5513938A/ja
Pending legal-status Critical Current

Links

Classifications

    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy

Landscapes

  • Photoreceptors In Electrophotography (AREA)
  • Chemical Vapour Deposition (AREA)
  • Photovoltaic Devices (AREA)
  • Light Receiving Elements (AREA)
JP8686778A 1978-07-17 1978-07-17 Photoelectronic conversion semiconductor device and its manufacturing method Pending JPS5513938A (en)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP8686778A JPS5513938A (en) 1978-07-17 1978-07-17 Photoelectronic conversion semiconductor device and its manufacturing method
US06/058,077 US4239554A (en) 1978-07-17 1979-07-16 Semiconductor photoelectric conversion device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP8686778A JPS5513938A (en) 1978-07-17 1978-07-17 Photoelectronic conversion semiconductor device and its manufacturing method

Publications (1)

Publication Number Publication Date
JPS5513938A true JPS5513938A (en) 1980-01-31

Family

ID=13898761

Family Applications (1)

Application Number Title Priority Date Filing Date
JP8686778A Pending JPS5513938A (en) 1978-07-17 1978-07-17 Photoelectronic conversion semiconductor device and its manufacturing method

Country Status (1)

Country Link
JP (1) JPS5513938A (ja)

Cited By (31)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS56100486A (en) * 1980-01-14 1981-08-12 Fuji Photo Film Co Ltd Photoelectric conversion element
JPS56115573A (en) * 1980-02-15 1981-09-10 Matsushita Electric Ind Co Ltd Photoconductive element
JPS5778183A (en) * 1980-09-09 1982-05-15 Energy Conversion Devices Inc Photoresponse amorphous alloy and method of producing same
DE3135353A1 (de) 1980-09-09 1982-07-08 Energy Conversion Devices Inc Fotoempfindliche amorphe mehrfachzellen-anordnung
JPS57119356A (en) * 1981-01-16 1982-07-24 Canon Inc Photoconductive member
JPS57136377A (en) * 1981-02-17 1982-08-23 Kanegafuchi Chem Ind Co Ltd Amorphous silicon nitride/amorphous silicon heterojunction photoelectric element
DE3135411A1 (de) 1980-09-09 1982-09-23 Energy Conversion Devices Inc Verfahren zum herstellen einer fotoempfindlichen amorphen legierung
JPS5814583A (ja) * 1981-07-17 1983-01-27 Kanegafuchi Chem Ind Co Ltd アモルフアス半導体およびアモルフアス半導体／アモルフアスシリコン・ヘテロ接合光起電力素子
JPS5839540A (ja) * 1981-09-04 1983-03-08 Kyokuto Kaihatsu Kogyo Co Ltd コンテナ積降自動車のサブフレ−ム
JPS5867073A (ja) * 1981-10-19 1983-04-21 Agency Of Ind Science & Technol 太陽電池
JPS5868046U (ja) * 1981-11-02 1983-05-09 工業技術院長 光起電力素子
JPS5885734A (ja) * 1981-11-17 1983-05-23 Shin Meiwa Ind Co Ltd 荷役車両のコンテナ積卸装置
JPS58134482A (ja) * 1982-02-05 1983-08-10 Agency Of Ind Science & Technol 光起電力装置
JPS5927581A (ja) * 1982-08-03 1984-02-14 Seisan Gijutsu Shinko Kyokai 光センサ
JPS5954274A (ja) * 1982-09-22 1984-03-29 Sanyo Electric Co Ltd 光起電力装置
JPS6091679A (ja) * 1983-09-21 1985-05-23 ア−ルシ−エ−　コ−ポレ−ション 光電装置
JPS60128456A (ja) * 1983-12-16 1985-07-09 Hitachi Ltd 電子写真用感光体
JPS60262470A (ja) * 1984-06-08 1985-12-25 Kanegafuchi Chem Ind Co Ltd 半導体装置
JPS6153238U (ja) * 1984-09-14 1986-04-10
JPS62162367A (ja) * 1986-11-19 1987-07-18 Semiconductor Energy Lab Co Ltd 炭素被膜を有する複合体
JPS62169372A (ja) * 1987-01-09 1987-07-25 Matsushita Electric Ind Co Ltd 半導体素子の製造方法
JPS62155039U (ja) * 1986-03-25 1987-10-01
JPS6334255A (ja) * 1986-07-30 1988-02-13 Fuji Heavy Ind Ltd コンテナ荷役車両の制御装置
JPS63289970A (ja) * 1987-05-22 1988-11-28 Matsushita Electric Ind Co Ltd 太陽電池電源
JPS63314874A (ja) * 1987-06-17 1988-12-22 Matsushita Electric Ind Co Ltd 太陽電池電源
JPH03188682A (ja) * 1981-04-30 1991-08-16 Kanegafuchi Chem Ind Co Ltd 高電圧アモルファス半導体／アモルファスシリコン・ヘテロ接合光起電力素子
US5262350A (en) * 1980-06-30 1993-11-16 Semiconductor Energy Laboratory Co., Ltd. Forming a non single crystal semiconductor layer by using an electric current
US5591987A (en) * 1980-03-03 1997-01-07 Semiconductor Energy Laboratory Co., Ltd. Semiconductor MIS field effect transistor with semi-amorphous semiconductor material
US5859443A (en) * 1980-06-30 1999-01-12 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
US6355941B1 (en) * 1980-06-30 2002-03-12 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
US6900463B1 (en) 1980-06-30 2005-05-31 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS51890A (en) * 1974-06-20 1976-01-07 Shunpei Yamazaki Handotaisochi oyobi sonosakuseihoho
JPS5143090A (ja) * 1974-10-09 1976-04-13 Sony Corp
JPS51113481A (en) * 1975-03-28 1976-10-06 Sony Corp Semiconductor device

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS51890A (en) * 1974-06-20 1976-01-07 Shunpei Yamazaki Handotaisochi oyobi sonosakuseihoho
JPS5143090A (ja) * 1974-10-09 1976-04-13 Sony Corp
JPS51113481A (en) * 1975-03-28 1976-10-06 Sony Corp Semiconductor device

Cited By (42)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS56100486A (en) * 1980-01-14 1981-08-12 Fuji Photo Film Co Ltd Photoelectric conversion element
JPS6335025B2 (ja) * 1980-02-15 1988-07-13 Matsushita Electric Ind Co Ltd
JPS56115573A (en) * 1980-02-15 1981-09-10 Matsushita Electric Ind Co Ltd Photoconductive element
US5591987A (en) * 1980-03-03 1997-01-07 Semiconductor Energy Laboratory Co., Ltd. Semiconductor MIS field effect transistor with semi-amorphous semiconductor material
US5859443A (en) * 1980-06-30 1999-01-12 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
US6355941B1 (en) * 1980-06-30 2002-03-12 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
US6900463B1 (en) 1980-06-30 2005-05-31 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
US5262350A (en) * 1980-06-30 1993-11-16 Semiconductor Energy Laboratory Co., Ltd. Forming a non single crystal semiconductor layer by using an electric current
DE3135353A1 (de) 1980-09-09 1982-07-08 Energy Conversion Devices Inc Fotoempfindliche amorphe mehrfachzellen-anordnung
DE3135411A1 (de) 1980-09-09 1982-09-23 Energy Conversion Devices Inc Verfahren zum herstellen einer fotoempfindlichen amorphen legierung
JPS5778183A (en) * 1980-09-09 1982-05-15 Energy Conversion Devices Inc Photoresponse amorphous alloy and method of producing same
JPS628783B2 (ja) * 1981-01-16 1987-02-24 Canon Kk
JPS57119356A (en) * 1981-01-16 1982-07-24 Canon Inc Photoconductive member
JPS57136377A (en) * 1981-02-17 1982-08-23 Kanegafuchi Chem Ind Co Ltd Amorphous silicon nitride/amorphous silicon heterojunction photoelectric element
JPH0544198B2 (ja) * 1981-02-17 1993-07-05 Kanegafuchi Chemical Ind
JPH03188682A (ja) * 1981-04-30 1991-08-16 Kanegafuchi Chem Ind Co Ltd 高電圧アモルファス半導体／アモルファスシリコン・ヘテロ接合光起電力素子
JPH0554272B2 (ja) * 1981-07-17 1993-08-12 Kanegafuchi Chemical Ind
JPS5814583A (ja) * 1981-07-17 1983-01-27 Kanegafuchi Chem Ind Co Ltd アモルフアス半導体およびアモルフアス半導体／アモルフアスシリコン・ヘテロ接合光起電力素子
JPS5839540A (ja) * 1981-09-04 1983-03-08 Kyokuto Kaihatsu Kogyo Co Ltd コンテナ積降自動車のサブフレ−ム
JPS6229260B2 (ja) * 1981-09-04 1987-06-25 Kyokuto Kaihatsu Kogyo Co
JPS5867073A (ja) * 1981-10-19 1983-04-21 Agency Of Ind Science & Technol 太陽電池
JPS6330789B2 (ja) * 1981-10-19 1988-06-21 Kogyo Gijutsuin
JPS629747Y2 (ja) * 1981-11-02 1987-03-06
JPS5868046U (ja) * 1981-11-02 1983-05-09 工業技術院長 光起電力素子
JPS6241145B2 (ja) * 1981-11-17 1987-09-01 Shin Meiwa Ind Co Ltd
JPS5885734A (ja) * 1981-11-17 1983-05-23 Shin Meiwa Ind Co Ltd 荷役車両のコンテナ積卸装置
JPS6250069B2 (ja) * 1982-02-05 1987-10-22 Kogyo Gijutsuin
JPS58134482A (ja) * 1982-02-05 1983-08-10 Agency Of Ind Science & Technol 光起電力装置
JPS5927581A (ja) * 1982-08-03 1984-02-14 Seisan Gijutsu Shinko Kyokai 光センサ
JPS5954274A (ja) * 1982-09-22 1984-03-29 Sanyo Electric Co Ltd 光起電力装置
JPH07254720A (ja) * 1983-09-21 1995-10-03 Rca Corp 光電装置
JPS6091679A (ja) * 1983-09-21 1985-05-23 ア−ルシ−エ−　コ−ポレ−ション 光電装置
JPS60128456A (ja) * 1983-12-16 1985-07-09 Hitachi Ltd 電子写真用感光体
JPS60262470A (ja) * 1984-06-08 1985-12-25 Kanegafuchi Chem Ind Co Ltd 半導体装置
JPS6153238U (ja) * 1984-09-14 1986-04-10
JPH0120199Y2 (ja) * 1984-09-14 1989-06-14
JPS62155039U (ja) * 1986-03-25 1987-10-01
JPS6334255A (ja) * 1986-07-30 1988-02-13 Fuji Heavy Ind Ltd コンテナ荷役車両の制御装置
JPS62162367A (ja) * 1986-11-19 1987-07-18 Semiconductor Energy Lab Co Ltd 炭素被膜を有する複合体
JPS62169372A (ja) * 1987-01-09 1987-07-25 Matsushita Electric Ind Co Ltd 半導体素子の製造方法
JPS63289970A (ja) * 1987-05-22 1988-11-28 Matsushita Electric Ind Co Ltd 太陽電池電源
JPS63314874A (ja) * 1987-06-17 1988-12-22 Matsushita Electric Ind Co Ltd 太陽電池電源

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