JPS5868046U - 光起電力素子 - Google Patents

光起電力素子

Info

Publication number
JPS5868046U
JPS5868046U JP16267781U JP16267781U JPS5868046U JP S5868046 U JPS5868046 U JP S5868046U JP 16267781 U JP16267781 U JP 16267781U JP 16267781 U JP16267781 U JP 16267781U JP S5868046 U JPS5868046 U JP S5868046U
Authority
JP
Japan
Prior art keywords
amorphous silicon
surface electrode
photovoltaic element
semiconductor layer
light
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP16267781U
Other languages
English (en)
Other versions
JPS629747Y2 (ja
Inventor
行雄 中嶋
津田　信哉
大西　三千年
桑野　幸徳
昇 中村
Original Assignee
工業技術院長
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 工業技術院長 filed Critical 工業技術院長
Priority to JP16267781U priority Critical patent/JPS5868046U/ja
Publication of JPS5868046U publication Critical patent/JPS5868046U/ja
Application granted granted Critical
Publication of JPS629747Y2 publication Critical patent/JPS629747Y2/ja
Granted legal-status Critical Current

Links

Classifications

    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy

Abstract

(57)【要約】本公報は電子出願前の出願データであるた
め要約のデータは記録されません。

Description

【図面の簡単な説明】
第１図は従来の光起電力素子の構成図、第２図以下の図
面はこの考案の光起電力素子の実施例を示し、第２図は
１実施例の構成図、第３図ないし第７図はそれぞれ他の
実施例の構成図である。 １・・・受光面電極、５・・・裏面電極、８，１０゜１
３、　１？、　　１９．　２３・・・半導体層、１２．
２２・・・絶縁薄膜、１８．２１・・・受光面電極、２
０゜２４・・・裏面電極。

Claims (1)

  1. 【実用新案登録請求の範囲】 ■　両側にそれぞれ設けられた受光面電極および裏面電
    極と、前記両電極間に形成された非晶質シリコンの半導
    体層とからなる多層構造を有する光起電力素子において
    、前記非晶質シリコンとして非晶質窒化シリコシを用い
    た光起電力素子。 ■　窒素含有率の大なる非晶質窒化シリコンからなる絶
    縁薄膜を、半導体層の受光面電極側に形成した実用新案
    登録請求の範囲第１項に記載の光起電力素子。
JP16267781U 1981-11-02 1981-11-02 光起電力素子 Granted JPS5868046U (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP16267781U JPS5868046U (ja) 1981-11-02 1981-11-02 光起電力素子

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP16267781U JPS5868046U (ja) 1981-11-02 1981-11-02 光起電力素子

Publications (2)

Publication Number Publication Date
JPS5868046U true JPS5868046U (ja) 1983-05-09
JPS629747Y2 JPS629747Y2 (ja) 1987-03-06

Family

ID=29954986

Family Applications (1)

Application Number Title Priority Date Filing Date
JP16267781U Granted JPS5868046U (ja) 1981-11-02 1981-11-02 光起電力素子

Country Status (1)

Country Link
JP (1) JPS5868046U (ja)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60233870A (ja) * 1984-02-24 1985-11-20 エナージー・コンバーション・デバイセス・インコーポレーテッド 反射防止二重層コ−テイングを備えた光感応半導体デバイス

Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS4842679A (ja) * 1971-09-29 1973-06-21
JPS5411285U (ja) * 1977-06-25 1979-01-24
JPS5511329A (en) * 1978-07-08 1980-01-26 Shunpei Yamazaki Semiconductor device
JPS5513938A (en) * 1978-07-17 1980-01-31 Shunpei Yamazaki Photoelectronic conversion semiconductor device and its manufacturing method
JPS5626478A (en) * 1979-08-13 1981-03-14 Shunpei Yamazaki Optoelectro conversion device
JPS57136377A (en) * 1981-02-17 1982-08-23 Kanegafuchi Chem Ind Co Ltd Amorphous silicon nitride/amorphous silicon heterojunction photoelectric element
JPS57181176A (en) * 1981-04-30 1982-11-08 Kanegafuchi Chem Ind Co Ltd High voltage amorphous semiconductor/amorphous silicon hetero junction photosensor

Patent Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS4842679A (ja) * 1971-09-29 1973-06-21
JPS5411285U (ja) * 1977-06-25 1979-01-24
JPS5511329A (en) * 1978-07-08 1980-01-26 Shunpei Yamazaki Semiconductor device
JPS5513938A (en) * 1978-07-17 1980-01-31 Shunpei Yamazaki Photoelectronic conversion semiconductor device and its manufacturing method
JPS5626478A (en) * 1979-08-13 1981-03-14 Shunpei Yamazaki Optoelectro conversion device
JPS57136377A (en) * 1981-02-17 1982-08-23 Kanegafuchi Chem Ind Co Ltd Amorphous silicon nitride/amorphous silicon heterojunction photoelectric element
JPS57181176A (en) * 1981-04-30 1982-11-08 Kanegafuchi Chem Ind Co Ltd High voltage amorphous semiconductor/amorphous silicon hetero junction photosensor

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60233870A (ja) * 1984-02-24 1985-11-20 エナージー・コンバーション・デバイセス・インコーポレーテッド 反射防止二重層コ−テイングを備えた光感応半導体デバイス

Also Published As

Publication number Publication date
JPS629747Y2 (ja) 1987-03-06

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