JPS5626478A - Optoelectro conversion device - Google Patents

Optoelectro conversion device

Info

Publication number
JPS5626478A
JPS5626478A JP10290579A JP10290579A JPS5626478A JP S5626478 A JPS5626478 A JP S5626478A JP 10290579 A JP10290579 A JP 10290579A JP 10290579 A JP10290579 A JP 10290579A JP S5626478 A JPS5626478 A JP S5626478A
Authority
JP
Japan
Prior art keywords
layer
nitride
semiconductor
optoelectro
type
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP10290579A
Other languages
Japanese (ja)
Inventor
Shunpei Yamazaki
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Individual
Original Assignee
Individual
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Individual filed Critical Individual
Priority to JP10290579A priority Critical patent/JPS5626478A/en
Priority to US06/177,407 priority patent/US4320248A/en
Priority to US06/177,408 priority patent/US4320249A/en
Priority to US06/177,409 priority patent/US4387387A/en
Publication of JPS5626478A publication Critical patent/JPS5626478A/en
Pending legal-status Critical Current

Links

Classifications

    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/546—Polycrystalline silicon PV cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/548—Amorphous silicon PV cells

Landscapes

  • Photovoltaic Devices (AREA)

Abstract

PURPOSE: To eliminate variations in thickness and height of a a barrier so as to obtain such a device as not to deteriorate optoelectro conversion efficiency even at the time when being used for a long period of time, when providing a light-transmissible, electroconductive, insulating or semi-insulating layer on a semiconductor layer, by composing it of nitride.
CONSTITUTION: When allowing an electroconductive layer 2 to achieve gaseous phase growth on a semiconductor layer 1 of N type, P type and I type, etc. composed of a single crystal silicon, an amorphous semiconductor, a noncrystal semiconductor and a polycrystalline semiconductor, etc., this is constituted by a layer composed not of an oxide but of a nitride. In short, this is heat-treated in an atmosphere of nitrogen to grow a silicon nitride, a titanium nitride, a tantalum nitride and an antimony nitride, etc. to such a thickness as 5∼100Å so that current can pass through, and on this surface a platinum or gold electroconductive layer of a solid surface or a grid shape is formed. And the same material as the layer 2 is attached onto an entire surface of reverse side of the layer 1. It is possible, by doing so, to obtain a device for a solar cell, etc. which is free from deterioration of optoelectro conversion efficiency.
COPYRIGHT: (C)1981,JPO&Japio
JP10290579A 1979-08-13 1979-08-13 Optoelectro conversion device Pending JPS5626478A (en)

Priority Applications (4)

Application Number Priority Date Filing Date Title
JP10290579A JPS5626478A (en) 1979-08-13 1979-08-13 Optoelectro conversion device
US06/177,407 US4320248A (en) 1979-08-13 1980-08-12 Semiconductor photoelectric conversion device
US06/177,408 US4320249A (en) 1979-08-13 1980-08-12 Heterojunction type semiconductor photoelectric conversion device
US06/177,409 US4387387A (en) 1979-08-13 1980-08-12 PN Or PIN junction type semiconductor photoelectric conversion device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP10290579A JPS5626478A (en) 1979-08-13 1979-08-13 Optoelectro conversion device

Related Child Applications (1)

Application Number Title Priority Date Filing Date
JP15999080A Division JPS5696878A (en) 1980-11-13 1980-11-13 Hetero-junction type semiconductor photoelectric converter

Publications (1)

Publication Number Publication Date
JPS5626478A true JPS5626478A (en) 1981-03-14

Family

ID=14339867

Family Applications (1)

Application Number Title Priority Date Filing Date
JP10290579A Pending JPS5626478A (en) 1979-08-13 1979-08-13 Optoelectro conversion device

Country Status (1)

Country Link
JP (1) JPS5626478A (en)

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5842280A (en) * 1981-09-07 1983-03-11 Sumitomo Electric Ind Ltd Manufacture of photovoltaic element
JPS5868046U (en) * 1981-11-02 1983-05-09 工業技術院長 photovoltaic element
JPS58101469A (en) * 1981-12-11 1983-06-16 Seiko Epson Corp Thin film solar battery
JPS6242465A (en) * 1985-08-19 1987-02-24 Semiconductor Energy Lab Co Ltd Photoelectric converter
WO1995008187A1 (en) * 1993-09-17 1995-03-23 Radiant Technologies, Inc. High-temperature electrical contact for making contact to ceramic materials and improved circuit element using the same

Cited By (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5842280A (en) * 1981-09-07 1983-03-11 Sumitomo Electric Ind Ltd Manufacture of photovoltaic element
JPH0128512B2 (en) * 1981-09-07 1989-06-02 Sumitomo Electric Industries
JPS5868046U (en) * 1981-11-02 1983-05-09 工業技術院長 photovoltaic element
JPS629747Y2 (en) * 1981-11-02 1987-03-06
JPS58101469A (en) * 1981-12-11 1983-06-16 Seiko Epson Corp Thin film solar battery
JPS6242465A (en) * 1985-08-19 1987-02-24 Semiconductor Energy Lab Co Ltd Photoelectric converter
WO1995008187A1 (en) * 1993-09-17 1995-03-23 Radiant Technologies, Inc. High-temperature electrical contact for making contact to ceramic materials and improved circuit element using the same
US5440173A (en) * 1993-09-17 1995-08-08 Radiant Technologies High-temperature electrical contact for making contact to ceramic materials and improved circuit element using the same

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