JPS58101469A - Thin film solar battery - Google Patents
Thin film solar batteryInfo
- Publication number
- JPS58101469A JPS58101469A JP56199796A JP19979681A JPS58101469A JP S58101469 A JPS58101469 A JP S58101469A JP 56199796 A JP56199796 A JP 56199796A JP 19979681 A JP19979681 A JP 19979681A JP S58101469 A JPS58101469 A JP S58101469A
- Authority
- JP
- Japan
- Prior art keywords
- electrode
- film
- thin film
- amorphous
- melting point
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000010409 thin film Substances 0.000 title claims description 16
- 229910052751 metal Inorganic materials 0.000 claims abstract description 16
- 239000002184 metal Substances 0.000 claims abstract description 16
- 230000008018 melting Effects 0.000 claims abstract description 11
- 238000002844 melting Methods 0.000 claims abstract description 11
- 229910021417 amorphous silicon Inorganic materials 0.000 claims abstract description 8
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 19
- 229910052782 aluminium Inorganic materials 0.000 claims description 18
- 239000010408 film Substances 0.000 claims description 16
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 7
- 229910052710 silicon Inorganic materials 0.000 claims description 7
- 239000010703 silicon Substances 0.000 claims description 7
- 239000011521 glass Substances 0.000 abstract description 6
- 229910045601 alloy Inorganic materials 0.000 abstract description 3
- 239000000956 alloy Substances 0.000 abstract description 3
- 238000004544 sputter deposition Methods 0.000 abstract description 3
- 239000000758 substrate Substances 0.000 abstract description 3
- 238000007796 conventional method Methods 0.000 abstract description 2
- 229910017305 Mo—Si Inorganic materials 0.000 abstract 2
- 229910004339 Ti-Si Inorganic materials 0.000 abstract 2
- 229910010978 Ti—Si Inorganic materials 0.000 abstract 2
- -1 Ta-Si Inorganic materials 0.000 abstract 1
- 238000004299 exfoliation Methods 0.000 abstract 1
- 238000000034 method Methods 0.000 description 4
- 238000004519 manufacturing process Methods 0.000 description 3
- 101100452374 Mus musculus Ikbke gene Proteins 0.000 description 1
- 229910000676 Si alloy Inorganic materials 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005566 electron beam evaporation Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 230000005496 eutectics Effects 0.000 description 1
- 239000000796 flavoring agent Substances 0.000 description 1
- 235000019634 flavors Nutrition 0.000 description 1
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 1
- NLYAJNPCOHFWQQ-UHFFFAOYSA-N kaolin Chemical compound O.O.O=[Al]O[Si](=O)O[Si](=O)O[Al]=O NLYAJNPCOHFWQQ-UHFFFAOYSA-N 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 238000001771 vacuum deposition Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0224—Electrodes
- H01L31/022408—Electrodes for devices characterised by at least one potential jump barrier or surface barrier
- H01L31/022425—Electrodes for devices characterised by at least one potential jump barrier or surface barrier for solar cells
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
Landscapes
- Engineering & Computer Science (AREA)
- Life Sciences & Earth Sciences (AREA)
- Sustainable Development (AREA)
- Sustainable Energy (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Photovoltaic Devices (AREA)
Abstract
Description
【発明の詳細な説明】
本発明は電極にアル建を用いたアモルファスシリコン太
霞電ｆ／ＩＡにおいて、アル電電極と７そル７アスシリ
；ン（以下ａ−１１４とかく）との間にシリコンを含む
高融点金属Ｏ膜を形成することによ〉、太陽電ｆＩＡの
歩＊）と性能陶土をはかり九薄膜太陽電池に関する。DETAILED DESCRIPTION OF THE INVENTION The present invention provides an amorphous silicon Taikaden f/IA using aluminum for the electrode, in which silicon is used between the aluminum electrode and the silicon (hereinafter referred to as a-114). By forming a high-melting-point metal O film containing a solar cell fIA*) and performance china clay, nine thin-film solar cells are developed.
近年、太陽電池の低コスト化へＯアゲａ−チとして、ａ
−８４を用いた太陽電池が非常に注−を県めている。In recent years, efforts have been made to reduce the cost of solar cells.
Solar cells using -84 are attracting a lot of attention.
従来の・−８（薄膜太陽電池の断面構造０１例として、
一方の電極に！１１１ｊ導電膜、一方の電極に金属を用
いたものを第１５１１に示す、岡閣において、！１はガ
ラス、１２は透明導電膜で、過當軸０． 、 Ｘ＠Ｏｓ
、ｒｔｏ（インジウム酸化錫）がＭいられる。★九、１
３は６−８（膜で透明導電膜側から１層、（層。Conventional -8 (as an example of cross-sectional structure 01 of a thin film solar cell,
On one electrode! 111j A conductive film using metal for one electrode is shown in No. 1511, in Okakaku! 1 is glass, 12 is a transparent conductive film, and the vertical axis is 0. , X@Os
, rto (indium tin oxide) is included. ★9, 1
3 is 6-8 (film, one layer from the transparent conductive film side, (layer.
襲層の積層構造になっている。 １４はアル電電極であ
る。It has a layered structure with multiple layers. 14 is an alkaline electrode.
光は矢印ムＯ方向から照射され、太陽電池の電気的出力
は、透明電極玖と金属電極１４とから取り出す。Light is irradiated from the direction of the arrow O, and the electrical output of the solar cell is extracted from the transparent electrode hole and the metal electrode 14.
製造方法は通常のグツズ１ＣＹＤ味が一毅に用いられる
。すなわち透明導電＠１２０つ％／％えガラス基［１１
を真空容器に入れ２８０〜３００℃に加熱する。この状
態で必！！に応じ１１４１．、 ｙｍ、 、 Ｂ、Ｈ６
０ガスを流しｔｋから、高周波放電によル、ア、イ２％
の各ａ−Ｂｉｌｌを形成する。As for the production method, the usual Gutsuzu 1CYD flavor is used for Ikki. That is, transparent conductive @ 120%/% glass base [11
Place in a vacuum container and heat to 280-300°C. A must in this condition! ! According to 1141. , ym, , B, H6
0 gas flows from tk, R, A, A 2% by high frequency discharge
form each a-Bill.
このあと、真空蒸着ヤスバッタ等にょルアルミ電極１４
がつけられる。金属電極としては、反射率が大きいアル
ミが用いられる。これは６−８（中を透過し走光をアル
ミとａ−８４の界面でα−８（中に反射させ光の利用効
率を高める丸めである。壕九アルンは蒸着やスパッタが
し中すく、得られた膜の導電率が大きいなどの特徴も備
えている。After this, vacuum evaporated Yasubata etc. aluminum electrode 14
can be added. Aluminum, which has a high reflectance, is used as the metal electrode. This is a round shape that increases the efficiency of light use by transmitting light through 6-8 and reflecting it into α-8 at the interface between aluminum and a-84. The resulting film also has features such as high electrical conductivity.
第１図は、電極の一方に透明導電膜を用い友場合につい
て述べ友が、両電極を金属にして、光を入射する方Ｏ電
極を半透ＢＡＫする構造も可能である。この場合にも半
透明電極としてアルミが用いられる。FIG. 1 shows a case in which a transparent conductive film is used for one of the electrodes. However, it is also possible to use a structure in which both electrodes are made of metal and the O electrode on which light is incident is semi-transparent. Also in this case, aluminum is used as the semitransparent electrode.
このようにアルミは電極として利用し中すい材料である
。反面、大きな欠点を有している。In this way, aluminum is a medium material that can be used as an electrode. On the other hand, it has major drawbacks.
それは、アルミが低い温度（５百数十度℃）で８イと共
晶になることであ）、さらＫ ４−ｇ（中に拡散し中す
いことである。スパッタ中真空蒸着時に充分な熱エネル
ギーをもったアルミの原子がＱ−８イ表ｉ１に飛んでく
ると、その原子は、えヤす（ａ−Ｂｉ中に拡散する。ま
た場合によりてはアルミと共晶をつ＜シ、α−日ｉを局
部的に奪い去る丸めピンホールを生ずる。The reason for this is that aluminum becomes eutectic with 8-g at low temperatures (500-odd degrees Celsius), and that it diffuses into K4-g (aluminum easily). When an aluminum atom with thermal energy flies into Q-8 A-Table i1, that atom diffuses into a-Bi. , produces a rounding pinhole that locally removes α-day i.
仁のような現象が起こるため太陽電池はリーク電流が増
加したシ、あるいはピンホールに起因する両電極間のシ
ョート状態が生じ、光電性能の低下、ならびに歩留シの
低下をも九らす。Due to this phenomenon, solar cells experience an increase in leakage current or a short-circuit between the two electrodes due to pinholes, resulting in a decrease in photoelectric performance and even a decrease in yield.
また、このような構造を有するアルミ電極のもつ欠点を
補なう方法として、ａ−８イとアルミ電極との間に高融
点金属、九とえばＷ、Ｍ＠、テ・、！’ ｅ Ｈ／等の
薄い膜を形成する方法も提案されている。In addition, as a method to compensate for the drawbacks of the aluminum electrode having such a structure, a high melting point metal, such as W, M@, Te...! A method of forming a thin film such as ' e H/ has also been proposed.
しかし、ａ−Ｂｉとこれらの高融点金属薄膜は密着性が
悪く、微妙な作製条件の差などにより、膜がはがれる場
合がある。これは薄膜太陽電池の信頼性を悪くシ、一つ
の欠点である。However, a-Bi and these high melting point metal thin films have poor adhesion, and the films may peel off due to subtle differences in manufacturing conditions. This is one drawback, as it reduces the reliability of thin-film solar cells.
本発明はかかる欠点を除去し友ものであって、その目的
とするところは、アルミ電極のもつ導電性の良さをいか
しつつ、薄膜太陽電池０光電性能ならびに歩留シの向上
をはかゐことＫある。さらに他の目的は、薄膜太陽電池
の信頼性を向上させることにある。The present invention aims to eliminate such drawbacks, and its purpose is to improve the photoelectric performance and yield of thin-film solar cells while taking advantage of the good conductivity of aluminum electrodes. There is K. Yet another objective is to improve the reliability of thin film solar cells.
本発明の断面構造を第２図に示す。第２図において、２
１はガラス、２２は透明導電膜、２３はａ−８ｔｉｌｌ
で透明導電展側からＰ層、ｉ層、８層の積層構造になっ
て・いる、２４はシリコンを含む高融点金属の薄膜、２
５Ｆｉアルミ電極である。A cross-sectional structure of the present invention is shown in FIG. In Figure 2, 2
1 is glass, 22 is a transparent conductive film, 23 is a-8till
It has a laminated structure of 8 layers, P layer, I layer, from the transparent conductive side, 24 is a thin film of high melting point metal containing silicon, 2
It is a 5Fi aluminum electrode.
光は矢印Ｂの方向から照射される。Light is emitted from the direction of arrow B.
本発明の製造方法は、透明導電膜２２のついたガラス基
１に２１の上にα−ＥＴＳＩＩ２３をつける工程までは
従来の方法と同じである。The manufacturing method of the present invention is the same as the conventional method up to the step of attaching α-ETSII 23 on the glass substrate 1 with the transparent conductive film 22 attached thereto.
その後、スパッタまたは電子ビーム蒸着によシシリコン
と高融点金属との合金、たとえば、Ｍ〇−８４、Ｔα−
ｓ＝ 、 Ｔ＝−ｓ４等の薄膜を形成する。膜厚は数百
オングストロームである。膜厚を厚くするために長時間
成膜することは熱的影蕃によシ太陽電池の特性劣化をま
ねく。Thereafter, an alloy of silicon and a high melting point metal is formed by sputtering or electron beam evaporation, such as M〇-84, Tα-
A thin film such as s= , T=-s4 is formed. The film thickness is several hundred angstroms. Forming a film for a long time in order to increase the film thickness causes thermal effects and leads to deterioration of the characteristics of the solar cell.
次に、シリコンと高融点金属との合金薄膜上に真空蒸着
あるいはスパッタによシアルミを０゜５〜１．０μｍつ
ける。このアルミにより電極としての導電性は充分保た
れる。Next, sialumium is applied to a thickness of 0.5 to 1.0 .mu.m by vacuum deposition or sputtering on the thin alloy film of silicon and high melting point metal. This aluminum maintains sufficient electrical conductivity as an electrode.
仁のような構造にすることによシ、従来のもののように
ａ−１３ｉが局部的にアルミ中へ奪い去られることも、
α−８ｉ中へのアルミの拡散をも防ぐことができた。By creating a nickel-like structure, the a-13i is not locally taken away into the aluminum like in conventional products.
It was also possible to prevent aluminum from diffusing into α-8i.
また最近提案された構造、すなわちａ−日ｉとアルミと
の間に高融点金属の薄膜を形成する方法に比べて、電極
のはがれも少なく信頼性が向上した。Furthermore, compared to a recently proposed structure, ie, a method in which a thin film of a high melting point metal is formed between the a-day i and aluminum, there is less peeling of the electrode and the reliability is improved.
太陽電池の光電性能ならびに歩留シを調べてみると、い
ずれも従来のものに比べてかな夛の向上がみられた。When we investigated the photoelectric performance and yield of solar cells, we found that they were both significantly improved compared to conventional ones.
たとえば、２０ｃＮφの平行板型の電極を４つプラズマ
Ｃ％ｒＤ装置において、基機温度り００℃、高周板出力
４０ ” ｅ Ｈｓベースの１０５６ ＢｉＨａ、 ５
００ＰＰＭの”ｓ ｅ ５００ ＰＰＭのβｚ）Ｉｇ
を用いて、１．１のＧ−８（太陽電池を約１００個作
製した。その場合ショート状態となって光起電力が０．
１ｖ以下の素子ができる確率は従来のものでは約３０ｔ
ｓであった。For example, in a plasma C%rD device with four parallel plate type electrodes of 20 cNφ, the base temperature is 00°C and the high frequency plate output is 40''e Hs based on 1056 BiHa, 5
00PPM's e 500 PPM's βz) Ig
Approximately 100 G-8 (1.1 solar cells) were produced using the following method.In this case, a short circuit occurred and the photovoltaic force was 0.
The probability of creating an element of 1V or less is about 30t with conventional technology.
It was s.
一方本発明の電極構造を用いた素子でａ７１Ｇであシ、
非常に歩留シが向上した。On the other hand, an element using the electrode structure of the present invention is a71G,
Yield was greatly improved.
また上述の条件で作製した太陽電池の曲線因子の平均値
は従来の構造のものが５５噂であるのに対し、本発明の
太陽電池ｄ６１％であｐｌそれに伴って変換効率も向上
していた。Furthermore, the average value of the fill factor of the solar cells produced under the above conditions is rumored to be 55 for the conventional structure, whereas the solar cell of the present invention had a d of 61%, and the conversion efficiency also improved accordingly. .
以上の説明かられかるように、本発明はα−ｓ７薄膜太
陽電池の光電性能ならびに歩留シを向上させ、さらに、
信頼性の向上をはかる上で非常に有筋である。As can be seen from the above description, the present invention improves the photoelectric performance and yield of α-S7 thin film solar cells, and furthermore,
This is extremely useful for improving reliability.
第１図は従来のα−５ｉｎｓ太陽電池の断面図、第２図
は本発明の断面図である。
２１１１・・ガラス基板
２２φ・・透明導電膜
２３ 拳ａ ｅ ａ−Ｂｉ Ｉ！
２４・・・シリコンを含む高融点金属の薄膜２５自−・
アルミ電極
以 上
出願人 株式会社諏訪精工舎
代理人 弁理士最 上 務
第１図
第２図FIG. 1 is a sectional view of a conventional α-5ins solar cell, and FIG. 2 is a sectional view of the present invention. 2111...Glass substrate 22φ...Transparent conductive film 23 Fist a e a-Bi I! 24... Thin film of high melting point metal containing silicon 25...
Aluminum electrodes and above Applicant Suwa Seikosha Co., Ltd. Agent Mogami Patent Attorney Figure 1 Figure 2
Claims (1)
スシリコン薄膜太陽電池において、アル々電極とア毫ル
ファスシリコンとの関にシリコンを含む＾融点金属膜を
形成したことを特徴とすゐ薄膜太陽電池。 ｔａｒシリ；ンを會む高融点金属としてＭ、−１４，テ
ィーｊＩ（、の命命を用い九ことを特徴とする特許請求
Ｏ範ｊｌＪ１１１［記載の薄膜太陽電池。[Scope of Claims] In an amorphous silicon thin film solar cell using at least one of the O electrodes and the amorphous silicon, a melting point metal film containing silicon is formed between the aluminum electrode and the amorphous silicon. Tosui thin film solar cell. A thin film solar cell according to claim 1, characterized in that the high melting point metal that meets the tar silicon is M, -14, TjI (9).
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP56199796A JPS58101469A (en) | 1981-12-11 | 1981-12-11 | Thin film solar battery |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP56199796A JPS58101469A (en) | 1981-12-11 | 1981-12-11 | Thin film solar battery |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS58101469A true JPS58101469A (en) | 1983-06-16 |
Family
ID=16413757
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP56199796A Pending JPS58101469A (en) | 1981-12-11 | 1981-12-11 | Thin film solar battery |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS58101469A (en) |
Cited By (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6191973A (en) * | 1984-10-11 | 1986-05-10 | Kanegafuchi Chem Ind Co Ltd | Heat resisting thin film photoelectric conversion element and manufacture thereof |
| JPS6191974A (en) * | 1984-10-11 | 1986-05-10 | Kanegafuchi Chem Ind Co Ltd | Heat resisting multijunction type semiconductor element |
| JPS61174779A (en) * | 1985-01-30 | 1986-08-06 | Kanegafuchi Chem Ind Co Ltd | Light converging type generator |
| JPS61255072A (en) * | 1985-05-07 | 1986-11-12 | Semiconductor Energy Lab Co Ltd | Photoelectric conversion device |
| US4765845A (en) * | 1984-06-15 | 1988-08-23 | Kanegafuchi Kagaku Kogyo Kabushiki Kaisha | Heat-resistant thin film photoelectric converter |
| JPS63503103A (en) * | 1985-09-30 | 1988-11-10 | 鐘淵化学工業株式会社 | Multi-junction semiconductor device |
| JPH05335607A (en) * | 1983-07-22 | 1993-12-17 | Semiconductor Energy Lab Co Ltd | Semiconductor device |
| JPH0774374A (en) * | 1994-03-10 | 1995-03-17 | Citizen Watch Co Ltd | Thin film diode and manufacture thereof |
| CN103022163A (en) * | 2011-09-22 | 2013-04-03 | 比亚迪股份有限公司 | Crystal silicon solar cell and preparation method thereof |
| US20140174911A1 (en) * | 2012-12-21 | 2014-06-26 | Intermolecular, Inc. | Methods and Systems for Reducing Particles During Physical Vapor Deposition |
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|---|---|---|---|---|
| JPS5021225A (en) * | 1973-06-29 | 1975-03-06 | ||
| JPS5320857A (en) * | 1976-08-11 | 1978-02-25 | Toshiba Corp | Semiconductor device |
| JPS5380183A (en) * | 1976-12-25 | 1978-07-15 | Fujitsu Ltd | Semiconductor device |
| JPS54141593A (en) * | 1978-04-24 | 1979-11-02 | Rca Corp | Amorphous silicon solar battery |
| JPS5626478A (en) * | 1979-08-13 | 1981-03-14 | Shunpei Yamazaki | Optoelectro conversion device |
-
1981
- 1981-12-11 JP JP56199796A patent/JPS58101469A/en active Pending
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5021225A (en) * | 1973-06-29 | 1975-03-06 | ||
| JPS5320857A (en) * | 1976-08-11 | 1978-02-25 | Toshiba Corp | Semiconductor device |
| JPS5380183A (en) * | 1976-12-25 | 1978-07-15 | Fujitsu Ltd | Semiconductor device |
| JPS54141593A (en) * | 1978-04-24 | 1979-11-02 | Rca Corp | Amorphous silicon solar battery |
| JPS5626478A (en) * | 1979-08-13 | 1981-03-14 | Shunpei Yamazaki | Optoelectro conversion device |
Cited By (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH05335607A (en) * | 1983-07-22 | 1993-12-17 | Semiconductor Energy Lab Co Ltd | Semiconductor device |
| US4765845A (en) * | 1984-06-15 | 1988-08-23 | Kanegafuchi Kagaku Kogyo Kabushiki Kaisha | Heat-resistant thin film photoelectric converter |
| JPS6191973A (en) * | 1984-10-11 | 1986-05-10 | Kanegafuchi Chem Ind Co Ltd | Heat resisting thin film photoelectric conversion element and manufacture thereof |
| JPS6191974A (en) * | 1984-10-11 | 1986-05-10 | Kanegafuchi Chem Ind Co Ltd | Heat resisting multijunction type semiconductor element |
| JPS61174779A (en) * | 1985-01-30 | 1986-08-06 | Kanegafuchi Chem Ind Co Ltd | Light converging type generator |
| JPS61255072A (en) * | 1985-05-07 | 1986-11-12 | Semiconductor Energy Lab Co Ltd | Photoelectric conversion device |
| JPS63503103A (en) * | 1985-09-30 | 1988-11-10 | 鐘淵化学工業株式会社 | Multi-junction semiconductor device |
| JPH0774374A (en) * | 1994-03-10 | 1995-03-17 | Citizen Watch Co Ltd | Thin film diode and manufacture thereof |
| CN103022163A (en) * | 2011-09-22 | 2013-04-03 | 比亚迪股份有限公司 | Crystal silicon solar cell and preparation method thereof |
| US20140174911A1 (en) * | 2012-12-21 | 2014-06-26 | Intermolecular, Inc. | Methods and Systems for Reducing Particles During Physical Vapor Deposition |
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