JPH11501463A - ＧａＮ−ＡｌＮをベース材料とする高電圧半導体装置の製造方法及び製造された半導体装置 - Google Patents

ＧａＮ−ＡｌＮをベース材料とする高電圧半導体装置の製造方法及び製造された半導体装置

Info

Publication number
JPH11501463A
JPH11501463A JP9524138A JP52413897A JPH11501463A JP H11501463 A JPH11501463 A JP H11501463A JP 9524138 A JP9524138 A JP 9524138A JP 52413897 A JP52413897 A JP 52413897A JP H11501463 A JPH11501463 A JP H11501463A
Authority
JP
Japan
Prior art keywords
layer
aln
gan layer
conductivity type
gan
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
JP9524138A
Other languages
English (en)
Japanese (ja)
Other versions
JPH11501463A5 (enExample
Inventor
ニキル エル タスカー
ピオトル エム メンズ
ババー アー カーン
Original Assignee
フィリップス エレクトロニクス ネムローゼ フェンノートシャップ
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by フィリップス エレクトロニクス ネムローゼ フェンノートシャップ filed Critical フィリップス エレクトロニクス ネムローゼ フェンノートシャップ
Publication of JPH11501463A publication Critical patent/JPH11501463A/ja
Publication of JPH11501463A5 publication Critical patent/JPH11501463A5/ja
Ceased legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/60—Electrodes characterised by their materials
    • H10D64/66—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes
    • H10D64/68—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes characterised by the insulator, e.g. by the gate insulator
    • H10D64/693—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes characterised by the insulator, e.g. by the gate insulator the insulator comprising nitrogen, e.g. nitrides, oxynitrides or nitrogen-doped materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
    • H01L21/283—Deposition of conductive or insulating materials for electrodes conducting electric current
    • H01L21/285—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation
    • H01L21/28506—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers
    • H01L21/28575—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising AIIIBV compounds
    • H01L21/28587—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising AIIIBV compounds characterised by the sectional shape, e.g. T, inverted T
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
    • H01L21/283—Deposition of conductive or insulating materials for electrodes conducting electric current
    • H01L21/285—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation
    • H01L21/28506—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers
    • H01L21/28575—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising AIIIBV compounds
    • H01L21/28587—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising AIIIBV compounds characterised by the sectional shape, e.g. T, inverted T
    • H01L21/28593—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising AIIIBV compounds characterised by the sectional shape, e.g. T, inverted T asymmetrical sectional shape
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/01—Manufacture or treatment
    • H10D30/015—Manufacture or treatment of FETs having heterojunction interface channels or heterojunction gate electrodes, e.g. HEMT
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/674—Thin-film transistors [TFT] characterised by the active materials
    • H10D30/675—Group III-V materials, Group II-VI materials, Group IV-VI materials, selenium or tellurium
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/80—FETs having rectifying junction gate electrodes
    • H10D30/801—FETs having heterojunction gate electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/17—Semiconductor regions connected to electrodes not carrying current to be rectified, amplified or switched, e.g. channel regions
    • H10D62/351—Substrate regions of field-effect devices
    • H10D62/357—Substrate regions of field-effect devices of FETs
    • H10D62/364—Substrate regions of field-effect devices of FETs of IGFETs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
    • H10D62/85—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group III-V materials, e.g. GaAs
    • H10D62/8503—Nitride Group III-V materials, e.g. AlN or GaN

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Thin Film Transistor (AREA)
  • Insulated Gate Type Field-Effect Transistor (AREA)
  • Formation Of Insulating Films (AREA)
JP9524138A 1995-12-28 1996-12-06 ＧａＮ−ＡｌＮをベース材料とする高電圧半導体装置の製造方法及び製造された半導体装置 Ceased JPH11501463A (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US08/583,148 US5915164A (en) 1995-12-28 1995-12-28 Methods of making high voltage GaN-A1N based semiconductor devices
US08/583,148 1995-12-28
PCT/IB1996/001377 WO1997024752A2 (en) 1995-12-28 1996-12-06 A METHOD OF MANUFACTURING A HIGH VOLTAGE GaN-AlN BASED SEMICONDUCTOR DEVICE AND SEMICONDUCTOR DEVICE MADE

Publications (2)

Publication Number Publication Date
JPH11501463A true JPH11501463A (ja) 1999-02-02
JPH11501463A5 JPH11501463A5 (enExample) 2004-11-04

Family

ID=24331868

Family Applications (1)

Application Number Title Priority Date Filing Date
JP9524138A Ceased JPH11501463A (ja) 1995-12-28 1996-12-06 ＧａＮ−ＡｌＮをベース材料とする高電圧半導体装置の製造方法及び製造された半導体装置

Country Status (5)

Country Link
US (2) US5915164A (enExample)
EP (1) EP0812468B1 (enExample)
JP (1) JPH11501463A (enExample)
DE (1) DE69625045T2 (enExample)
WO (1) WO1997024752A2 (enExample)

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JP2001230410A (ja) * 2000-02-18 2001-08-24 Furukawa Electric Co Ltd:The ＧａＮ系電界効果トランジスタとその製造方法
US6593193B2 (en) 2001-02-27 2003-07-15 Matsushita Electric Industrial Co., Ltd. Semiconductor device and method for fabricating the same
JP2003297855A (ja) * 2002-04-01 2003-10-17 Mitsubishi Electric Corp 半導体装置の製造方法および半導体装置
US7285806B2 (en) 2000-03-22 2007-10-23 Matsushita Electric Industrial Co., Ltd. Semiconductor device having an active region formed from group III nitride
JP2008159631A (ja) * 2006-12-20 2008-07-10 Furukawa Electric Co Ltd:The Ｉｉｉ−ｖ族窒化物化合物半導体電界効果トランジスタおよびその製造方法
JP2008172101A (ja) * 2007-01-12 2008-07-24 Furukawa Electric Co Ltd:The 埋込方法、半導体素子製造方法および半導体素子
JP2008311392A (ja) * 2007-06-14 2008-12-25 Furukawa Electric Co Ltd:The Ｉｉｉ族窒化物半導体を用いた電界効果トランジスタ
JP2009076673A (ja) * 2007-09-20 2009-04-09 Furukawa Electric Co Ltd:The Ｉｉｉ族窒化物半導体を用いた電界効果トランジスタ
JP2009088081A (ja) * 2007-09-28 2009-04-23 Furukawa Electric Co Ltd:The Ｉｉｉ族窒化物半導体を用いた電界効果トランジスタ
JP2009302541A (ja) * 2008-06-11 2009-12-24 Furukawa Electric Co Ltd:The 電界効果トランジスタおよび電界効果トランジスタの製造方法
JP2010045073A (ja) * 2008-08-08 2010-02-25 Furukawa Electric Co Ltd:The 電界効果トランジスタおよび電界効果トランジスタの製造方法
JP2014033115A (ja) * 2012-08-03 2014-02-20 Rohm Co Ltd 窒化物半導体素子
JP2023026957A (ja) * 2021-08-16 2023-03-01 住友電気工業株式会社 半導体装置及び半導体装置の製造方法

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US6265322B1 (en) 1999-09-21 2001-07-24 Agere Systems Guardian Corp. Selective growth process for group III-nitride-based semiconductors
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Cited By (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2001230410A (ja) * 2000-02-18 2001-08-24 Furukawa Electric Co Ltd:The ＧａＮ系電界効果トランジスタとその製造方法
US7585706B2 (en) 2000-03-22 2009-09-08 Panasonic Corporation Method of fabricating a semiconductor device
US7285806B2 (en) 2000-03-22 2007-10-23 Matsushita Electric Industrial Co., Ltd. Semiconductor device having an active region formed from group III nitride
US6593193B2 (en) 2001-02-27 2003-07-15 Matsushita Electric Industrial Co., Ltd. Semiconductor device and method for fabricating the same
US7307292B2 (en) 2001-02-27 2007-12-11 Matsushita Electric Industrial Co., Ltd. Semiconductor device and method for fabricating the same
JP2003297855A (ja) * 2002-04-01 2003-10-17 Mitsubishi Electric Corp 半導体装置の製造方法および半導体装置
JP2008159631A (ja) * 2006-12-20 2008-07-10 Furukawa Electric Co Ltd:The Ｉｉｉ−ｖ族窒化物化合物半導体電界効果トランジスタおよびその製造方法
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US5915164A (en) 1999-06-22
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WO1997024752A2 (en) 1997-07-10

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