JPH11501463A - GaN−AlNをベース材料とする高電圧半導体装置の製造方法及び製造された半導体装置 - Google Patents
GaN−AlNをベース材料とする高電圧半導体装置の製造方法及び製造された半導体装置Info
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- JPH11501463A JPH11501463A JP9524138A JP52413897A JPH11501463A JP H11501463 A JPH11501463 A JP H11501463A JP 9524138 A JP9524138 A JP 9524138A JP 52413897 A JP52413897 A JP 52413897A JP H11501463 A JPH11501463 A JP H11501463A
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- aln
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- 239000004065 semiconductor Substances 0.000 title claims abstract description 17
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 9
- 239000000463 material Substances 0.000 title description 10
- 239000000758 substrate Substances 0.000 claims abstract description 20
- 238000000034 method Methods 0.000 claims abstract description 14
- 238000005530 etching Methods 0.000 claims description 12
- 230000000873 masking effect Effects 0.000 claims description 5
- 229910018072 Al 2 O 3 Inorganic materials 0.000 claims 1
- 229910002601 GaN Inorganic materials 0.000 description 42
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 description 25
- 230000008901 benefit Effects 0.000 description 5
- 229910052594 sapphire Inorganic materials 0.000 description 5
- 239000010980 sapphire Substances 0.000 description 5
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 3
- 239000011810 insulating material Substances 0.000 description 3
- 229910052710 silicon Inorganic materials 0.000 description 3
- 230000015572 biosynthetic process Effects 0.000 description 2
- 230000015556 catabolic process Effects 0.000 description 2
- 230000005684 electric field Effects 0.000 description 2
- 229910021476 group 6 element Inorganic materials 0.000 description 2
- 230000003287 optical effect Effects 0.000 description 2
- 238000001020 plasma etching Methods 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- PIGFYZPCRLYGLF-UHFFFAOYSA-N Aluminum nitride Chemical compound [Al]#N PIGFYZPCRLYGLF-UHFFFAOYSA-N 0.000 description 1
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical class [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 239000003990 capacitor Substances 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 230000017525 heat dissipation Effects 0.000 description 1
- 125000005842 heteroatom Chemical group 0.000 description 1
- 238000005286 illumination Methods 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 238000005468 ion implantation Methods 0.000 description 1
- 238000010884 ion-beam technique Methods 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 238000002488 metal-organic chemical vapour deposition Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 230000002265 prevention Effects 0.000 description 1
- 238000000992 sputter etching Methods 0.000 description 1
- 239000002470 thermal conductor Substances 0.000 description 1
- 238000001039 wet etching Methods 0.000 description 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/43—Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/49—Metal-insulator-semiconductor electrodes, e.g. gates of MOSFET
- H01L29/51—Insulating materials associated therewith
- H01L29/518—Insulating materials associated therewith the insulating material containing nitrogen, e.g. nitride, oxynitride, nitrogen-doped material
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
- H01L21/283—Deposition of conductive or insulating materials for electrodes conducting electric current
- H01L21/285—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation
- H01L21/28506—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers
- H01L21/28575—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising AIIIBV compounds
- H01L21/28587—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising AIIIBV compounds characterised by the sectional shape, e.g. T, inverted T
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
- H01L21/283—Deposition of conductive or insulating materials for electrodes conducting electric current
- H01L21/285—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation
- H01L21/28506—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers
- H01L21/28575—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising AIIIBV compounds
- H01L21/28587—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising AIIIBV compounds characterised by the sectional shape, e.g. T, inverted T
- H01L21/28593—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising AIIIBV compounds characterised by the sectional shape, e.g. T, inverted T asymmetrical sectional shape
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/10—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode not carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
- H01L29/107—Substrate region of field-effect devices
- H01L29/1075—Substrate region of field-effect devices of field-effect transistors
- H01L29/1079—Substrate region of field-effect devices of field-effect transistors with insulated gate
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66409—Unipolar field-effect transistors
- H01L29/66446—Unipolar field-effect transistors with an active layer made of a group 13/15 material, e.g. group 13/15 velocity modulation transistor [VMT], group 13/15 negative resistance FET [NERFET]
- H01L29/66462—Unipolar field-effect transistors with an active layer made of a group 13/15 material, e.g. group 13/15 velocity modulation transistor [VMT], group 13/15 negative resistance FET [NERFET] with a heterojunction interface channel or gate, e.g. HFET, HIGFET, SISFET, HJFET, HEMT
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- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
- H01L29/78681—Thin film transistors, i.e. transistors with a channel being at least partly a thin film having a semiconductor body comprising AIIIBV or AIIBVI or AIVBVI semiconductor materials, or Se or Te
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- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
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- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/80—Field effect transistors with field effect produced by a PN or other rectifying junction gate, i.e. potential-jump barrier
- H01L29/802—Field effect transistors with field effect produced by a PN or other rectifying junction gate, i.e. potential-jump barrier with heterojunction gate, e.g. transistors with semiconductor layer acting as gate insulating layer, MIS-like transistors
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/20—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only AIIIBV compounds
- H01L29/2003—Nitride compounds
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- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Ceramic Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Chemical & Material Sciences (AREA)
- Materials Engineering (AREA)
- Thin Film Transistor (AREA)
- Formation Of Insulating Films (AREA)
Abstract
Description
Claims (1)
- 【特許請求の範囲】 I.高電圧半導体デバイスを製造するに当たり、 基板(1)上に一導電型のGaN層(2)を形成する工程と、 前記GaN層(2)上にAlNの半絶縁層(3)を形成する工程と、 前記AlN層の一部分及び部分(11)をマスキングする工程と、 前記AlN層(3)及びAlN層(3)のマスクされた部分の下側のGaN 層(2)の部分(11)をエッチングする工程と、 前記一導電型のGaN層(2)上及びAlN層のマスクされた部分の下側の 区域に反対導電型GaN層(4,5)を形成してpn接合を形成する工程とを具 える高電圧半導体デバイスの製造方法。 2.請求項1に記載の方法において、前記一導電型のGaN層(2)をp形とし 、反対導電型のGaN層(4,5)をn形とした方法。 3.請求項1又は2に記載の方法において、前記反対導電型のGaN層(4,5 )をn+形とした方法。 4.請求項1、2又は3に記載の方法において、前記反対導電型のGaN層(4 ,5)の少なくとも一部分をn形とした方法。 5.さらに、前記各AlN層(3)及び前記反対導電型のGaN層(4,5)の AlN層(3)とは反対側の部分に電気的コンタクト27、28、29を形成す る工程を具える方法。 6.高電圧半導体デバイスを製造するに当たり、 基板(41)上に一導電型のGaN層(42)を形成する工程と、 前記一導電型のGaN層(42)上に反対導電型のGaN層(43)を形成 する工程と、 前記反対導電型のGaN層(43)を前記一導電型のGaN層(42)まで エッチングしてキャビティ(44)を形成する工程と、 前記反対導電型のGaN層(43)上に前記キャビティ(44)内まで半絶 縁性のAlN層(45)を形成する工程とを具える高電圧半導体デバイスの製造 方法。 7.さらに、前記各AlN層(45)及び前記反対導電型のGaN層(43)の 前記キャビティ(44)とは反対側の部分に電気的コンタクトを形成する工程を 具える方法。 8.基板(1)と、この基板(1)上の一導電型のGaN層(2)と、前記一導 電型のGaN層上(2)上の半絶縁性のAlN部分(3)と、前記一導電型のG aN層(2)上の前記半絶縁性のAlN層(3)の互いに対向する側及びAlN 層(3)の下側に部分的に形成した反対導電型のGaN層(4,5)とを具える 半導体デバイス。 9.請求項1から8までのいずれか1項に記載の半導体デバイスにおいて、前記 基板(1)をAl2O3とした半導体デバイス。
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US08/583,148 | 1995-12-28 | ||
US08/583,148 US5915164A (en) | 1995-12-28 | 1995-12-28 | Methods of making high voltage GaN-A1N based semiconductor devices |
PCT/IB1996/001377 WO1997024752A2 (en) | 1995-12-28 | 1996-12-06 | A METHOD OF MANUFACTURING A HIGH VOLTAGE GaN-AlN BASED SEMICONDUCTOR DEVICE AND SEMICONDUCTOR DEVICE MADE |
Publications (1)
Publication Number | Publication Date |
---|---|
JPH11501463A true JPH11501463A (ja) | 1999-02-02 |
Family
ID=24331868
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP9524138A Ceased JPH11501463A (ja) | 1995-12-28 | 1996-12-06 | GaN−AlNをベース材料とする高電圧半導体装置の製造方法及び製造された半導体装置 |
Country Status (5)
Country | Link |
---|---|
US (2) | US5915164A (ja) |
EP (1) | EP0812468B1 (ja) |
JP (1) | JPH11501463A (ja) |
DE (1) | DE69625045T2 (ja) |
WO (1) | WO1997024752A2 (ja) |
Cited By (12)
Publication number | Priority date | Publication date | Assignee | Title |
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JP2001230410A (ja) * | 2000-02-18 | 2001-08-24 | Furukawa Electric Co Ltd:The | GaN系電界効果トランジスタとその製造方法 |
US6593193B2 (en) | 2001-02-27 | 2003-07-15 | Matsushita Electric Industrial Co., Ltd. | Semiconductor device and method for fabricating the same |
JP2003297855A (ja) * | 2002-04-01 | 2003-10-17 | Mitsubishi Electric Corp | 半導体装置の製造方法および半導体装置 |
US7285806B2 (en) | 2000-03-22 | 2007-10-23 | Matsushita Electric Industrial Co., Ltd. | Semiconductor device having an active region formed from group III nitride |
JP2008159631A (ja) * | 2006-12-20 | 2008-07-10 | Furukawa Electric Co Ltd:The | Iii−v族窒化物化合物半導体電界効果トランジスタおよびその製造方法 |
JP2008172101A (ja) * | 2007-01-12 | 2008-07-24 | Furukawa Electric Co Ltd:The | 埋込方法、半導体素子製造方法および半導体素子 |
JP2008311392A (ja) * | 2007-06-14 | 2008-12-25 | Furukawa Electric Co Ltd:The | Iii族窒化物半導体を用いた電界効果トランジスタ |
JP2009076673A (ja) * | 2007-09-20 | 2009-04-09 | Furukawa Electric Co Ltd:The | Iii族窒化物半導体を用いた電界効果トランジスタ |
JP2009088081A (ja) * | 2007-09-28 | 2009-04-23 | Furukawa Electric Co Ltd:The | Iii族窒化物半導体を用いた電界効果トランジスタ |
JP2009302541A (ja) * | 2008-06-11 | 2009-12-24 | Furukawa Electric Co Ltd:The | 電界効果トランジスタおよび電界効果トランジスタの製造方法 |
JP2010045073A (ja) * | 2008-08-08 | 2010-02-25 | Furukawa Electric Co Ltd:The | 電界効果トランジスタおよび電界効果トランジスタの製造方法 |
JP2014033115A (ja) * | 2012-08-03 | 2014-02-20 | Rohm Co Ltd | 窒化物半導体素子 |
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US5915164A (en) * | 1995-12-28 | 1999-06-22 | U.S. Philips Corporation | Methods of making high voltage GaN-A1N based semiconductor devices |
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JP2014033115A (ja) * | 2012-08-03 | 2014-02-20 | Rohm Co Ltd | 窒化物半導体素子 |
Also Published As
Publication number | Publication date |
---|---|
US5915164A (en) | 1999-06-22 |
US5990531A (en) | 1999-11-23 |
DE69625045D1 (de) | 2003-01-09 |
EP0812468A2 (en) | 1997-12-17 |
WO1997024752A3 (en) | 1997-08-28 |
WO1997024752A2 (en) | 1997-07-10 |
EP0812468B1 (en) | 2002-11-27 |
DE69625045T2 (de) | 2003-07-24 |
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