JPH11251550A5 - - Google Patents

Info

Publication number
JPH11251550A5
JPH11251550A5 JP1998351720A JP35172098A JPH11251550A5 JP H11251550 A5 JPH11251550 A5 JP H11251550A5 JP 1998351720 A JP1998351720 A JP 1998351720A JP 35172098 A JP35172098 A JP 35172098A JP H11251550 A5 JPH11251550 A5 JP H11251550A5
Authority
JP
Japan
Prior art keywords
capacitor
dielectric layer
forming
capacitor electrode
cavity
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP1998351720A
Other languages
English (en)
Japanese (ja)
Other versions
JPH11251550A (ja
Filing date
Publication date
Priority claimed from US09/022,756 external-priority patent/US6344413B1/en
Application filed filed Critical
Publication of JPH11251550A publication Critical patent/JPH11251550A/ja
Publication of JPH11251550A5 publication Critical patent/JPH11251550A5/ja
Pending legal-status Critical Current

Links

JP10351720A 1997-12-22 1998-12-10 半導体素子の形成方法 Pending JPH11251550A (ja)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
US99553497A 1997-12-22 1997-12-22
US995534 1997-12-22
US022756 1998-02-12
US09/022,756 US6344413B1 (en) 1997-12-22 1998-02-12 Method for forming a semiconductor device

Publications (2)

Publication Number Publication Date
JPH11251550A JPH11251550A (ja) 1999-09-17
JPH11251550A5 true JPH11251550A5 (https=) 2006-02-02

Family

ID=26696336

Family Applications (1)

Application Number Title Priority Date Filing Date
JP10351720A Pending JPH11251550A (ja) 1997-12-22 1998-12-10 半導体素子の形成方法

Country Status (5)

Country Link
US (2) US6344413B1 (https=)
JP (1) JPH11251550A (https=)
KR (1) KR100756587B1 (https=)
CN (1) CN1192435C (https=)
TW (1) TW405254B (https=)

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