JPH11204494A5 - - Google Patents

Info

Publication number
JPH11204494A5
JPH11204494A5 JP1998003397A JP339798A JPH11204494A5 JP H11204494 A5 JPH11204494 A5 JP H11204494A5 JP 1998003397 A JP1998003397 A JP 1998003397A JP 339798 A JP339798 A JP 339798A JP H11204494 A5 JPH11204494 A5 JP H11204494A5
Authority
JP
Japan
Prior art keywords
substrate
porous region
etching solution
ultrasonic waves
porous
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP1998003397A
Other languages
English (en)
Japanese (ja)
Other versions
JPH11204494A (ja
JP3847935B2 (ja
Filing date
Publication date
Application filed filed Critical
Priority claimed from JP00339798A external-priority patent/JP3847935B2/ja
Priority to JP00339798A priority Critical patent/JP3847935B2/ja
Priority to US09/211,559 priority patent/US6127281A/en
Priority to SG1998005829A priority patent/SG75147A1/en
Priority to TW087120966A priority patent/TW440950B/zh
Priority to AT98310437T priority patent/ATE293284T1/de
Priority to EP98310437A priority patent/EP0938132B1/en
Priority to DE69829738T priority patent/DE69829738T2/de
Priority to AU98188/98A priority patent/AU745396B2/en
Priority to KR1019980058992A priority patent/KR100354918B1/ko
Publication of JPH11204494A publication Critical patent/JPH11204494A/ja
Publication of JPH11204494A5 publication Critical patent/JPH11204494A5/ja
Publication of JP3847935B2 publication Critical patent/JP3847935B2/ja
Application granted granted Critical
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

JP00339798A 1998-01-09 1998-01-09 多孔質領域の除去方法及び半導体基体の製造方法 Expired - Fee Related JP3847935B2 (ja)

Priority Applications (9)

Application Number Priority Date Filing Date Title
JP00339798A JP3847935B2 (ja) 1998-01-09 1998-01-09 多孔質領域の除去方法及び半導体基体の製造方法
US09/211,559 US6127281A (en) 1998-01-09 1998-12-15 Porous region removing method and semiconductor substrate manufacturing method
SG1998005829A SG75147A1 (en) 1998-01-09 1998-12-15 Porous region removing method and semiconductor substrate manufacturing method
TW087120966A TW440950B (en) 1998-01-09 1998-12-16 Porous region removing method and semiconductor substrate manufacturing method
DE69829738T DE69829738T2 (de) 1998-01-09 1998-12-18 Verfahren zur Entfernung einer porösen Halbleiterzone und Verfahren zur Herstellung eines halbleitenden Substrats
EP98310437A EP0938132B1 (en) 1998-01-09 1998-12-18 Porous region removing method and semiconductor substrate manufacturing method
AT98310437T ATE293284T1 (de) 1998-01-09 1998-12-18 Verfahren zur entfernung einer porösen halbleiterzone und verfahren zur herstellung eines halbleitenden substrats
AU98188/98A AU745396B2 (en) 1998-01-09 1998-12-24 Porous region removing method and semiconductor substrate manufacturing method
KR1019980058992A KR100354918B1 (ko) 1998-01-09 1998-12-26 다공질영역의제거방법및반도체기판의제조방법

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP00339798A JP3847935B2 (ja) 1998-01-09 1998-01-09 多孔質領域の除去方法及び半導体基体の製造方法

Publications (3)

Publication Number Publication Date
JPH11204494A JPH11204494A (ja) 1999-07-30
JPH11204494A5 true JPH11204494A5 (enExample) 2005-08-04
JP3847935B2 JP3847935B2 (ja) 2006-11-22

Family

ID=11556241

Family Applications (1)

Application Number Title Priority Date Filing Date
JP00339798A Expired - Fee Related JP3847935B2 (ja) 1998-01-09 1998-01-09 多孔質領域の除去方法及び半導体基体の製造方法

Country Status (9)

Country Link
US (1) US6127281A (enExample)
EP (1) EP0938132B1 (enExample)
JP (1) JP3847935B2 (enExample)
KR (1) KR100354918B1 (enExample)
AT (1) ATE293284T1 (enExample)
AU (1) AU745396B2 (enExample)
DE (1) DE69829738T2 (enExample)
SG (1) SG75147A1 (enExample)
TW (1) TW440950B (enExample)

Families Citing this family (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7148119B1 (en) * 1994-03-10 2006-12-12 Canon Kabushiki Kaisha Process for production of semiconductor substrate
JPH10223585A (ja) * 1997-02-04 1998-08-21 Canon Inc ウェハ処理装置及びその方法並びにｓｏｉウェハの製造方法
US6391067B2 (en) 1997-02-04 2002-05-21 Canon Kabushiki Kaisha Wafer processing apparatus and method, wafer convey robot, semiconductor substrate fabrication method, and semiconductor fabrication apparatus
US6767840B1 (en) * 1997-02-21 2004-07-27 Canon Kabushiki Kaisha Wafer processing apparatus, wafer processing method, and semiconductor substrate fabrication method
JP3218564B2 (ja) 1998-01-14 2001-10-15 キヤノン株式会社 多孔質領域の除去方法及び半導体基体の製造方法
EP1173883B1 (de) * 1999-04-27 2003-10-01 Gebrüder Decker GmbH & Co. Kg Behandlungsvorrichtung für silizium-scheiben
JP3810968B2 (ja) * 1999-12-03 2006-08-16 東京エレクトロン株式会社 液処理装置および液処理方法
JP2004228150A (ja) * 2003-01-20 2004-08-12 Canon Inc エッチング方法
US7040330B2 (en) * 2003-02-20 2006-05-09 Lam Research Corporation Method and apparatus for megasonic cleaning of patterned substrates
TWI227932B (en) * 2003-06-23 2005-02-11 Promos Technologies Inc Method for forming a bottle-shaped trench
US20050132332A1 (en) * 2003-12-12 2005-06-16 Abhay Sathe Multi-location coordinated test apparatus
US20050181572A1 (en) * 2004-02-13 2005-08-18 Verhoeven Tracy B. Method for acoustically isolating an acoustic resonator from a substrate
JP2005327856A (ja) * 2004-05-13 2005-11-24 Komatsu Electronic Metals Co Ltd 半導体ウェーハのエッチング装置
JP4955264B2 (ja) 2005-03-11 2012-06-20 エルピーダメモリ株式会社 多孔質単結晶層を備えた半導体チップおよびその製造方法
US8327861B2 (en) * 2006-12-19 2012-12-11 Lam Research Corporation Megasonic precision cleaning of semiconductor process equipment components and parts
DE102008003453A1 (de) * 2008-01-08 2009-07-09 Robert Bosch Gmbh Verfahren zur Herstellung poröser Mikrostrukturen, nach diesem Verfahren hergestellte poröse Mikrostrukturen sowie deren Verwendung
CN102125921B (zh) * 2010-01-20 2012-09-05 常州瑞择微电子科技有限公司 一种光掩模在清洗过程中的传输方法
JP7276036B2 (ja) * 2019-09-19 2023-05-18 大日本印刷株式会社 エッチング装置およびエッチング方法

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH05217824A (ja) * 1992-01-31 1993-08-27 Canon Inc 半導体ウエハ及びその製造方法
US5593505A (en) * 1995-04-19 1997-01-14 Memc Electronic Materials, Inc. Method for cleaning semiconductor wafers with sonic energy and passing through a gas-liquid-interface
US6103598A (en) * 1995-07-13 2000-08-15 Canon Kabushiki Kaisha Process for producing semiconductor substrate
CN1132223C (zh) * 1995-10-06 2003-12-24 佳能株式会社 半导体衬底及其制造方法
JPH09331049A (ja) * 1996-04-08 1997-12-22 Canon Inc 貼り合わせｓｏｉ基板の作製方法及びｓｏｉ基板

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