JPH10242102A5 - - Google Patents
Info
- Publication number
- JPH10242102A5 JPH10242102A5 JP1997038079A JP3807997A JPH10242102A5 JP H10242102 A5 JPH10242102 A5 JP H10242102A5 JP 1997038079 A JP1997038079 A JP 1997038079A JP 3807997 A JP3807997 A JP 3807997A JP H10242102 A5 JPH10242102 A5 JP H10242102A5
- Authority
- JP
- Japan
- Prior art keywords
- substrate
- porous layer
- manufacturing
- etching
- semiconductor substrate
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Priority Applications (11)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP03807997A JP3831877B2 (ja) | 1997-02-21 | 1997-02-21 | 半導体基体の製造方法 |
| SG1998000290A SG63810A1 (en) | 1997-02-21 | 1998-02-10 | Wafer processing apparatus wafer processing method and semiconductor substrate fabrication method |
| TW090218651U TW504041U (en) | 1997-02-21 | 1998-02-10 | Wafer processing apparatus |
| AU55370/98A AU742258B2 (en) | 1997-02-21 | 1998-02-18 | Wafer processing apparatus, wafer processing method, and semiconductor substrate fabrication method |
| CA002229975A CA2229975C (en) | 1997-02-21 | 1998-02-18 | Wafer processing apparatus, wafer processing method, and semiconductor substrate fabrication method |
| US09/025,409 US6199563B1 (en) | 1997-02-21 | 1998-02-18 | Wafer processing apparatus, wafer processing method, and semiconductor substrate fabrication method |
| EP98102897A EP0860860A3 (en) | 1997-02-21 | 1998-02-19 | Wafer processing apparatus, wafer processing method, and semiconductor substrate fabrication method |
| KR1019980005354A KR100306054B1 (ko) | 1997-02-21 | 1998-02-20 | 웨이퍼처리장치,웨이퍼처리방법및반도체기체의제조방법 |
| CN98105320A CN1111900C (zh) | 1997-02-21 | 1998-02-20 | 晶片处理装置、晶片处理方法、和半导体衬底制备方法 |
| US09/664,715 US6767840B1 (en) | 1997-02-21 | 2000-09-19 | Wafer processing apparatus, wafer processing method, and semiconductor substrate fabrication method |
| KR1020000065431A KR100347824B1 (ko) | 1997-02-21 | 2000-11-04 | 웨이퍼 처리장치, 웨이퍼 처리방법 및 반도체기체의제조방법 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP03807997A JP3831877B2 (ja) | 1997-02-21 | 1997-02-21 | 半導体基体の製造方法 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JPH10242102A JPH10242102A (ja) | 1998-09-11 |
| JPH10242102A5 true JPH10242102A5 (enExample) | 2005-01-20 |
| JP3831877B2 JP3831877B2 (ja) | 2006-10-11 |
Family
ID=12515490
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP03807997A Expired - Fee Related JP3831877B2 (ja) | 1997-02-21 | 1997-02-21 | 半導体基体の製造方法 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP3831877B2 (enExample) |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US7091132B2 (en) * | 2003-07-24 | 2006-08-15 | Applied Materials, Inc. | Ultrasonic assisted etch using corrosive liquids |
| JP5312662B1 (ja) * | 2012-11-02 | 2013-10-09 | 倉敷紡績株式会社 | ウエハ回転装置及びウエハ回転方法 |
-
1997
- 1997-02-21 JP JP03807997A patent/JP3831877B2/ja not_active Expired - Fee Related
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