JP3831877B2 - 半導体基体の製造方法 - Google Patents

半導体基体の製造方法 Download PDF

Info

Publication number
JP3831877B2
JP3831877B2 JP03807997A JP3807997A JP3831877B2 JP 3831877 B2 JP3831877 B2 JP 3831877B2 JP 03807997 A JP03807997 A JP 03807997A JP 3807997 A JP3807997 A JP 3807997A JP 3831877 B2 JP3831877 B2 JP 3831877B2
Authority
JP
Japan
Prior art keywords
wafer
layer
substrate
porous
etching
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
JP03807997A
Other languages
English (en)
Japanese (ja)
Other versions
JPH10242102A5 (enExample
JPH10242102A (ja
Inventor
二三男 上原
賢一 原田
清文 坂口
一隆 柳田
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
MARUWA CORPORATION
Canon Inc
Original Assignee
MARUWA CORPORATION
Canon Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by MARUWA CORPORATION, Canon Inc filed Critical MARUWA CORPORATION
Priority to JP03807997A priority Critical patent/JP3831877B2/ja
Priority to SG1998000290A priority patent/SG63810A1/en
Priority to TW090218651U priority patent/TW504041U/zh
Priority to US09/025,409 priority patent/US6199563B1/en
Priority to AU55370/98A priority patent/AU742258B2/en
Priority to CA002229975A priority patent/CA2229975C/en
Priority to EP98102897A priority patent/EP0860860A3/en
Priority to KR1019980005354A priority patent/KR100306054B1/ko
Priority to CN98105320A priority patent/CN1111900C/zh
Publication of JPH10242102A publication Critical patent/JPH10242102A/ja
Priority to US09/664,715 priority patent/US6767840B1/en
Priority to KR1020000065431A priority patent/KR100347824B1/ko
Publication of JPH10242102A5 publication Critical patent/JPH10242102A5/ja
Application granted granted Critical
Publication of JP3831877B2 publication Critical patent/JP3831877B2/ja
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Images

Landscapes

  • Weting (AREA)
  • Cleaning Or Drying Semiconductors (AREA)
JP03807997A 1997-02-21 1997-02-21 半導体基体の製造方法 Expired - Fee Related JP3831877B2 (ja)

Priority Applications (11)

Application Number Priority Date Filing Date Title
JP03807997A JP3831877B2 (ja) 1997-02-21 1997-02-21 半導体基体の製造方法
SG1998000290A SG63810A1 (en) 1997-02-21 1998-02-10 Wafer processing apparatus wafer processing method and semiconductor substrate fabrication method
TW090218651U TW504041U (en) 1997-02-21 1998-02-10 Wafer processing apparatus
AU55370/98A AU742258B2 (en) 1997-02-21 1998-02-18 Wafer processing apparatus, wafer processing method, and semiconductor substrate fabrication method
CA002229975A CA2229975C (en) 1997-02-21 1998-02-18 Wafer processing apparatus, wafer processing method, and semiconductor substrate fabrication method
US09/025,409 US6199563B1 (en) 1997-02-21 1998-02-18 Wafer processing apparatus, wafer processing method, and semiconductor substrate fabrication method
EP98102897A EP0860860A3 (en) 1997-02-21 1998-02-19 Wafer processing apparatus, wafer processing method, and semiconductor substrate fabrication method
KR1019980005354A KR100306054B1 (ko) 1997-02-21 1998-02-20 웨이퍼처리장치,웨이퍼처리방법및반도체기체의제조방법
CN98105320A CN1111900C (zh) 1997-02-21 1998-02-20 晶片处理装置、晶片处理方法、和半导体衬底制备方法
US09/664,715 US6767840B1 (en) 1997-02-21 2000-09-19 Wafer processing apparatus, wafer processing method, and semiconductor substrate fabrication method
KR1020000065431A KR100347824B1 (ko) 1997-02-21 2000-11-04 웨이퍼 처리장치, 웨이퍼 처리방법 및 반도체기체의제조방법

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP03807997A JP3831877B2 (ja) 1997-02-21 1997-02-21 半導体基体の製造方法

Publications (3)

Publication Number Publication Date
JPH10242102A JPH10242102A (ja) 1998-09-11
JPH10242102A5 JPH10242102A5 (enExample) 2005-01-20
JP3831877B2 true JP3831877B2 (ja) 2006-10-11

Family

ID=12515490

Family Applications (1)

Application Number Title Priority Date Filing Date
JP03807997A Expired - Fee Related JP3831877B2 (ja) 1997-02-21 1997-02-21 半導体基体の製造方法

Country Status (1)

Country Link
JP (1) JP3831877B2 (enExample)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7091132B2 (en) * 2003-07-24 2006-08-15 Applied Materials, Inc. Ultrasonic assisted etch using corrosive liquids
JP5312662B1 (ja) * 2012-11-02 2013-10-09 倉敷紡績株式会社 ウエハ回転装置及びウエハ回転方法

Also Published As

Publication number Publication date
JPH10242102A (ja) 1998-09-11

Similar Documents

Publication Publication Date Title
KR100347824B1 (ko) 웨이퍼 처리장치, 웨이퍼 처리방법 및 반도체기체의제조방법
US6337030B1 (en) Wafer processing apparatus, wafer processing method, and SOI wafer fabrication method
US6767840B1 (en) Wafer processing apparatus, wafer processing method, and semiconductor substrate fabrication method
JP3218564B2 (ja) 多孔質領域の除去方法及び半導体基体の製造方法
CN1099699C (zh) 用粘贴法制造soi基片的方法及soi基片
CN1058354C (zh) 半导体部件的制造方法
EP0926709A2 (en) Method of manufacturing an SOI structure
JP3847935B2 (ja) 多孔質領域の除去方法及び半導体基体の製造方法
KR100382325B1 (ko) 웨이퍼처리장치및그방법,웨이퍼반송장치,그리고반도체제조장치
JP3831878B2 (ja) ウェハ処理装置
JP3031904B2 (ja) 複合部材とその分離方法、及びそれを利用した半導体基体の製造方法
JP3831877B2 (ja) 半導体基体の製造方法
JP2000150837A (ja) 半導体基体の作製方法
JP2004247609A (ja) 基板の製造方法
JP2000133558A (ja) 半導体基体の作製方法およびそれにより作製された基体
JP2000336499A (ja) 基板の処理方法及び製造方法並びに陽極化成装置
JP2004228150A (ja) エッチング方法

Legal Events

Date Code Title Description
A521 Written amendment

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20040219

A621 Written request for application examination

Free format text: JAPANESE INTERMEDIATE CODE: A621

Effective date: 20040219

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20060403

A521 Written amendment

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20060518

TRDD Decision of grant or rejection written
A01 Written decision to grant a patent or to grant a registration (utility model)

Free format text: JAPANESE INTERMEDIATE CODE: A01

Effective date: 20060609

A61 First payment of annual fees (during grant procedure)

Free format text: JAPANESE INTERMEDIATE CODE: A61

Effective date: 20060706

R150 Certificate of patent or registration of utility model

Free format text: JAPANESE INTERMEDIATE CODE: R150

FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20100728

Year of fee payment: 4

FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20100728

Year of fee payment: 4

FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20110728

Year of fee payment: 5

FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20120728

Year of fee payment: 6

FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20120728

Year of fee payment: 6

FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20130728

Year of fee payment: 7

LAPS Cancellation because of no payment of annual fees