JP2000040812A5 - - Google Patents
Download PDFInfo
- Publication number
- JP2000040812A5 JP2000040812A5 JP1998205998A JP20599898A JP2000040812A5 JP 2000040812 A5 JP2000040812 A5 JP 2000040812A5 JP 1998205998 A JP1998205998 A JP 1998205998A JP 20599898 A JP20599898 A JP 20599898A JP 2000040812 A5 JP2000040812 A5 JP 2000040812A5
- Authority
- JP
- Japan
- Prior art keywords
- layer
- single crystal
- substrate
- silicon
- silicon oxide
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000000758 substrate Substances 0.000 claims 49
- 229910021421 monocrystalline silicon Inorganic materials 0.000 claims 39
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims 36
- 229910052814 silicon oxide Inorganic materials 0.000 claims 36
- 229910021426 porous silicon Inorganic materials 0.000 claims 26
- 239000004065 semiconductor Substances 0.000 claims 24
- 239000012298 atmosphere Substances 0.000 claims 16
- 238000010438 heat treatment Methods 0.000 claims 16
- 239000010408 film Substances 0.000 claims 12
- 239000013078 crystal Substances 0.000 claims 11
- 239000001257 hydrogen Substances 0.000 claims 10
- 229910052739 hydrogen Inorganic materials 0.000 claims 10
- 238000004519 manufacturing process Methods 0.000 claims 10
- 238000000034 method Methods 0.000 claims 10
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 claims 9
- 230000003647 oxidation Effects 0.000 claims 8
- 238000007254 oxidation reaction Methods 0.000 claims 8
- 229910021417 amorphous silicon Inorganic materials 0.000 claims 4
- 239000010409 thin film Substances 0.000 claims 4
- 238000005530 etching Methods 0.000 claims 2
- 239000012299 nitrogen atmosphere Substances 0.000 claims 2
- 150000002431 hydrogen Chemical class 0.000 claims 1
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP20599898A JP4298009B2 (ja) | 1998-07-22 | 1998-07-22 | Ｓｏｉ基板の作製方法及び半導体装置の作製方法 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP20599898A JP4298009B2 (ja) | 1998-07-22 | 1998-07-22 | Ｓｏｉ基板の作製方法及び半導体装置の作製方法 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2000040812A JP2000040812A (ja) | 2000-02-08 |
| JP2000040812A5 true JP2000040812A5 (enExample) | 2005-10-20 |
| JP4298009B2 JP4298009B2 (ja) | 2009-07-15 |
Family
ID=16516225
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP20599898A Expired - Fee Related JP4298009B2 (ja) | 1998-07-22 | 1998-07-22 | Ｓｏｉ基板の作製方法及び半導体装置の作製方法 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP4298009B2 (enExample) |
Families Citing this family (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| FR2827423B1 (fr) * | 2001-07-16 | 2005-05-20 | Soitec Silicon On Insulator | Procede d'amelioration d'etat de surface |
| US8415208B2 (en) | 2001-07-16 | 2013-04-09 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and peeling off method and method of manufacturing semiconductor device |
| TW554398B (en) | 2001-08-10 | 2003-09-21 | Semiconductor Energy Lab | Method of peeling off and method of manufacturing semiconductor device |
| US7351300B2 (en) | 2001-08-22 | 2008-04-01 | Semiconductor Energy Laboratory Co., Ltd. | Peeling method and method of manufacturing semiconductor device |
| KR100944886B1 (ko) | 2001-10-30 | 2010-03-03 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 반도체 장치의 제조 방법 |
| WO2007083570A1 (ja) * | 2006-01-16 | 2007-07-26 | Matsushita Electric Industrial Co., Ltd. | 半導体小片の製造方法ならびに電界効果トランジスタおよびその製造方法 |
| FR2914493B1 (fr) * | 2007-03-28 | 2009-08-07 | Soitec Silicon On Insulator | Substrat demontable. |
-
1998
- 1998-07-22 JP JP20599898A patent/JP4298009B2/ja not_active Expired - Fee Related
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| KR100380512B1 (ko) | 막구조를기체로부터박리하는공정을갖는반도체소자형성법 | |
| JPH01315159A (ja) | 誘電体分離半導体基板とその製造方法 | |
| JP5140635B2 (ja) | 薄膜素子の製造方法 | |
| CN1819215B (zh) | 元件形成用衬底及其制造方法和半导体装置 | |
| JPH11204494A5 (enExample) | ||
| JP2000040812A5 (enExample) | ||
| JP2006012914A (ja) | 集積回路チップの製造方法及び半導体装置 | |
| JP2000183360A5 (ja) | 半導体装置の作製方法 | |
| JP3171322B2 (ja) | Ｓｏｉ基板およびその製造方法 | |
| JP2001250775A (ja) | 半導体基板及び半導体装置及び半導体基板の製造方法及び半導体基板の製造治具及び半導体装置の製造治具 | |
| JPH04199632A (ja) | Ｓｏｉウエハ及びその製造方法 | |
| JP3330255B2 (ja) | 半導体装置の製造方法 | |
| JP2001144273A (ja) | 半導体装置の製造方法 | |
| JP3034528B2 (ja) | 半導体装置の製造方法 | |
| JPH03286551A (ja) | 半導体装置の製造方法 | |
| JP2003110096A (ja) | Ｓｏｉ基板およびその製造方法 | |
| JPH10242102A5 (enExample) | ||
| JPH1051005A5 (enExample) | ||
| JPH08213578A (ja) | Ｓｏｉ基板及びその製造方法 | |
| TWI223836B (en) | Backside lapping-free wafer manufacturing process | |
| JPH04206925A (ja) | 貼り合わせウェハの製造方法 | |
| JPH10197854A5 (enExample) | ||
| JPH06151303A (ja) | 半導体ウエーハの形成方法 | |
| JPH02106075A (ja) | 半導体装置の製造方法 | |
| JPH0266933A (ja) | 半導体装置の製造方法 |