JPH08335688A - ピン光ダイオード集積能動画素センサー - Google Patents

ピン光ダイオード集積能動画素センサー

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Publication number
JPH08335688A
JPH08335688A JP8088326A JP8832696A JPH08335688A JP H08335688 A JPH08335688 A JP H08335688A JP 8088326 A JP8088326 A JP 8088326A JP 8832696 A JP8832696 A JP 8832696A JP H08335688 A JPH08335688 A JP H08335688A
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JP
Japan
Prior art keywords
sensor
conductivity type
drain
ccd
cmos
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP8088326A
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English (en)
Inventor
Paul P Lee
ピー リー ポール
Robert M Guidash
エム ガイダッシュ ロバート
Teh-Hsuang Lee
リー テー−スアン
Eric G Stevens
ゴードン スティーブンス エリック
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Eastman Kodak Co
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Eastman Kodak Co
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Publication date
Application filed by Eastman Kodak Co filed Critical Eastman Kodak Co
Publication of JPH08335688A publication Critical patent/JPH08335688A/ja
Pending legal-status Critical Current

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14683—Processes or apparatus peculiar to the manufacture or treatment of these devices or parts thereof
    • H01L27/14689—MOS based technologies
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14601—Structural or functional details thereof
    • H01L27/14609—Pixel-elements with integrated switching, control, storage or amplification elements
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14643—Photodiode arrays; MOS imagers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14643—Photodiode arrays; MOS imagers
    • H01L27/14645—Colour imagers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/148—Charge coupled imagers
    • H01L27/14831—Area CCD imagers

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  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Electromagnetism (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Solid State Image Pick-Up Elements (AREA)
  • Transforming Light Signals Into Electric Signals (AREA)

Abstract

(57)【要約】 【課題】 ピン光ダイオードが能動画素センサーの画像
検知要素内に集積される２つの技術（ＣＭＯＳ及びＣＣ
Ｄ）の最適化を達成する。 【解決手段】 ピン光ダイオードは能動画素アーキテク
チャー内のプロセス段階で作られる。能動画素ピン光ダ
イオードないに集積された電荷は転送ゲートにより電荷
検知ノード内に転送される。浮遊拡散はそれぞれの画素
のアドレッシング能力を提供するＣＭＯＳ回路に結合さ
れる。代替的に埋込チャンネル光コンデンサはピン光ダ
イオードの代わりに用いられる。

Description

【発明の詳細な説明】
【０００１】
【発明の属する技術分野】本発明は画像検出デバイスに
関し、より詳細にはＣＭＯＳ技術での電荷結合素子（Ｃ
ＣＤ）の集積技術に関する。
【０００２】
【従来の技術】能動画素センサーはトランジスタのよう
な能動デバイス内で電子画像センサーと称される。能動
画素センサーは同一チップ上に信号処理及び決定作成回
路を容易に収容可能であるという利点を有する。従来技
術の能動画素センサーは典型的には能動画像検知要素と
してポリシリコン光コンデンサ又は光ゲートを用いる。
これらの従来技術の能動画素センサーは青の応答が悪
く、高い暗電流があり、画像ラグを被る。
【０００３】ピン光ダイオードは電荷結合デバイス内で
用いられ、青い光、暗電流密度、画像ラグに対するカラ
ー応答の領域で利点を有する。この理由でピン光ダイオ
ードは通常高性能画像センサーに関連する。これまでピ
ン光ダイオードは典型的には電荷結合デバイス用の光素
子として用いられてきた。そのようなピン光ダイオード
の使用の例はＢｕｒｋｅｙ等によるＩＥＤＭ８４，１９
８４，２８−３１頁の「ＴＨＥ ＰＩＮＮＥＤ ＰＨＯ
ＴＯＤＩＯＤＥ ＦＯＲ ＡＮ ＩＮＴＥＲＬＩＮＥ−
ＴＲＡＮＳＦＥＲ ＣＣＤ ＩＭＡＧＥ ＳＥＮＳＯ
Ｒ」に記載されている。しかしながら電荷結合デバイス
技術はデバイス上に配置されうる回路要素の量及び型に
おいて欠如している。
【０００４】上記より改善された回路素子を提供しうる
半導体技術で用いられ得るピン光ダイオードに対する半
導体技術でニーズがなお存在することは明白である。
【０００５】
【発明が解決しようとする課題】本発明は２つの技術
（ＣＭＯＳ及びＣＣＤ）の最適化を提供することにより
従来技術の欠点を克服し、ここでピン光ダイオードは能
動画素センサーの画像検知要素内で集積される。
【０００６】
【課題を解決するための手段】ピン光ダイオードは通常
ＣＣＤ技術で製造される。ＣＣＤ技術からの適切なプロ
セス段階を導入することによりピン光ダイオードは能動
画素アーキテクチャー内に集積されうる。能動画素セン
サー青応答と暗電流限界を改善するために新たなＣＭＯ
Ｓイメージャーが混合プロセス技術を用いるピン光ダイ
オードで集積される。この技術は両方の技術から最高の
特徴を提供するためにＣＭＯＳ及びＣＣＤプロセスを結
合する。
【０００７】
【発明の実施の形態】電荷結合デバイス（ＣＣＤ）の技
術的特徴は両方の技術を用いるピン光ダイオードを有す
る能動画素センサーを製造するためにＣＭＯＳ型の半導
体に用いられうる。図１はＣＭＯＳに基づく単一処理シ
ステム内で用いられるように本発明の能動画素センサー
に基づくピン光ダイオードを示す。能動画素センサーの
青応答を改善し、ラグを減少し、暗電流特性を最小化す
るために新たなＣＭＯＳイメージャーは混合されたプロ
セス技術を用いてピン光ダイオード１２に集積される。
これは両方の技術から最良の特徴を有するセンサーを提
供するためにｎウエルＣＭＯＳ技術及びピン光ダイオー
ドＣＣＤプロセスを結合する。ｎｘｍのピン光ダイオー
ド能動画素センサーは設計され、製造され、ここでｎと
ｍはセンサーの端での画素の数である。本発明はＣＭＯ
Ｓ能動センサーでの画像センサーＣＣＤ技術により利点
を有する。
【０００８】図２は本発明のセンサーを製造するのに用
いられるデバイスの断面図である。これは混合プロセス
技術を用いるピン光ダイオード１２（ＰＰＤ）デバイス
で相補的金属酸化物半導体（ＣＭＯＳ）内で典型的に製
造される能動画素センサー（ＡＰＳ）アーキテクチャー
の集積の結果である。この新たな技術はＣＭＯＳと高性
能電荷結合素子（ＣＣＤ）モジュールの混合を許容す
る。ＰＰＤ１２は転送１４、浮遊拡散を介する読み取り
１６、リセット１８機能にたいする能動デバイスを含む
各画素を有するＸＹアドレス可能な領域配列での光動作
素子となる。ｎウエルＣＭＯＳ技術は両方の技術からの
最良の特徴を提供するためにＣＣＤプロセスと結合され
た。従来のＡＰＳでポリシリコン光コンデンサ又は光ゲ
ートをピン光ダイオード１２で置き換えることにより悪
い青の応答、画像ラグ、高い暗電流の欠点は最小化され
る。
【０００９】集積モードでバイアスされた埋込チャンネ
ル光コンデンサ（図示せず）はＣＭＯＳ技術が有する暗
電流での制限を有さない。埋込チャンネル光コンデンサ
はＰＰＤに対する本質的に等価な暗電流特性を有する。
青応答問題は透明ゲート材料を用いることによりまた除
去されうる。そのような材料の例はインジウム錫酸化物
（ＩＴＯ）である。故に両方を用いて透明ゲート電極を
有する埋込チャンネル光コンデンサはＰＰＤにより達成
されたそれらと同様の青応答、暗電流に対する優れた特
性を提供する。透明電極を有する埋込チャンネル光コン
デンサとＰＰＤの両方はＣＣＤ技術に典型的に関連する
デバイスである。本発明はＣＭＯＳプロセス能力を有す
るＣＣＤ技術からこれらのデバイスを導入する。埋込チ
ャンネル光コンデンサを用いる能動画素センサーの構成
はＰＰＤ実施例の転送ゲートと非常に類似に構造化され
た光コンデンサを有する図２のＰＰＤに類似である。光
コンデンサ実施例の転送ゲートはＰＰＤ実施例により用
いられる転送ゲートの埋込チャンネルなしである。
【００１０】プロセスの統合は従来技術の各プロセスに
よりそれぞれ得られるものに匹敵する性能を有する２つ
の技術の混合である。これは線形画像センサー及びＣＭ
ＯＳテスト回路で示されている。混合されたプロセス技
術ではプロセスフローの概略は図３から９に示される。
図３は本発明の制御回路の一部分を形成するＰＭＯＳト
ランジスタを含むために用いられるｎウエル４０を形成
するために本発明で用いられるパターン化及びイオンイ
ンプラントを示す。
【００１１】図４、５はエピタキシャル層と共に又はな
しで、ウエル構造と共に又はなしでシリコン層２上に形
成されるように絶縁デバイスとして用いられる絶縁酸化
物／フィールド酸化物のパターン化及び成長を示す。図
６は本発明の画素の転送ゲート１４を形成するために用
いられるｎ型埋込チャンネル１５のパターン化及びイオ
ンインプラントを示す。埋込チャンネル１５のインプラ
ントの後にフォトレジスト層５２は除去され、ポリシリ
コン層２６は基板上に形成される。ポリシリコン２６は
局部相互接続及びトランジスタのゲートを形成するため
に用いられる。ＰＭＯＳ及びＮＭＯＳトランジスタの両
方はこのポリシリコン３６により形成されたそれらのゲ
ートを有する。
【００１２】図７はフォトレジスト５４でポリシリコン
２６のパターン化及びソース及びドレイン領域を形成す
るためにＮ＋ドーパントのインプラントを示す。これは
残余のポリシリコンに自己配列されるソース及びドレイ
ン領域を生ずる。これは好ましい実施例でのＮＭＯＳト
ランジスタを形成する。図８は２つの付加的なインプラ
ントに対するフォトレジスト５６領域でパターン化され
ることによるＰＰＤの構造を示す。第一のインプラント
は上記のソース及びドレインインプラントにより以前に
用いられたのより深くＮ＋不純物をインプラントするこ
とによりフォトダイオードを作ることである。より深い
インプラントはそれと共に入射光キャリアに対する収集
路を増加するために光応答での実質的な増加を得る。そ
れからピン層２２インプラントはフォトダイオード３２
の表面付近に残る低エネルギーＰ＋ドーパントの高ドー
ズを用いて作られる。
【００１３】図９はフォトレジスト５８でのパターン化
及びそれに続くＰＭＯＳトランジスタのソース／ドレイ
ンのイオンインプラントを示す。ＮＭＯＳトランジスタ
に関してＰＭＯＳトランジスタに対するソース／ドレイ
ンインプラントは選択されたポリシリコンで自己配列さ
れる。Ｐ＋インプラントはＰＭＯＳトランジスタを構成
するよう用いられる。
【００１４】デバイスは適切な平坦化及び金属被覆化段
階により完成される。本発明のイメージャーアーキテク
チャーはそれらの全体的な性能を増加するために従来技
術のデバイスの信号処理回路に用いられる得る。その例
は本発明のジェット推進研究所で実施された初期の設計
への導入である。この初期の設計はＩＥＥＥ Ｔｒａｎ
ｓａｃｔｉｏｎｓ ｏｎ Ｅｌｅｃｔｒｏｎ Ｄｅｖｉ
ｃｅｓ，Ｖｏｌ．４１，Ｎｏ．３、１９９４年３月（以
下にＪＰＬと称する）に記載される。能動画素センサー
内に集積された光ゲートを記載する一方でＪＰＬにより
開示されたデバイスは満足できる青波長のカラー応答を
有するセンサーを提供しない。付加的にＪＰＬデバイス
は充分低い暗電流ノイズ特性を持たない。本発明は従来
ＣＭＯＳ技術で応用されなかったピン光ダイオード技術
を導入することによりこれらの欠点を克服する。これは
青い光に対する優れた応答と改善された暗電流ノイズ特
性とを有する画像センサーを提供する。
【００１５】発明者に知られているベストモードが好ま
しい実施例により開示されてきた一方で、種々の改良は
当業者に対して明らかである。これらの明らかな改良は
請求項の範囲であると考えるべきものである。
【図面の簡単な説明】
【図１】本発明の能動画素センサーに基づくピン光ダイ
オードを示す。
【図２】本発明のセンサーを製造するのに用いられるデ
バイスの断面図である。
【図３】図２のデバイスを製造するのに用いられるプロ
セス段階を示す図である。
【図４】図２のデバイスを製造するのに用いられるプロ
セス段階を示す図である。
【図５】図２のデバイスを製造するのに用いられるプロ
セス段階を示す図である。
【図６】図２のデバイスを製造するのに用いられるプロ
セス段階を示す図である。
【図７】図２のデバイスを製造するのに用いられるプロ
セス段階を示す図である。
【図８】図２のデバイスを製造するのに用いられるプロ
セス段階を示す図である。
【図９】図２のデバイスを製造するのに用いられるプロ
セス段階を示す図である。
【符号の説明】
２ 基板 ４ エピタキシャル層 １０ 画素 １２ フォトダイオード １４ 転送 １５ チャンネル １６ 拡散 １８ リセット ２２ ピン層 ２６ ポリシリコン ３２ フォトダイオード ４０ ｎウエル ５２ フォトレジスト層 ５４、５６、５８ フォトレジスト
───────────────────────────────────────────────────── フロントページの続き (72)発明者 テー−スアン リー アメリカ合衆国，ニューヨーク 14580, ウエブスター，ハイタワー・ウエイ 760 (72)発明者 エリック ゴードン スティーブンス アメリカ合衆国，ニューヨーク 14624, ロチェスター，ヘイ・マーケット・ロード 40

Claims (1)

    【特許請求の範囲】
  1. 【請求項１】 ピン光ダイオードを能動画素センサー内
    に集積する方法であって、 基板の主要な表面上に少なくとも１つの導電性層を含む
    一連のマスク層を有するように第一の導電性型の半導体
    材料から作られた基板を設け；制御回路が設けられる領
    域内に第一の導電性型と逆の第二の導電性型の少なくと
    も一つのウエルを形成し、基板上に能動領域を形成し；
    少なくとも一つの転送ゲート及び一連の局部相互接続を
    パターン化し；所定のトランジスタの組に対するソース
    とドレインの第一の組を表すパターンを形成し、ドレイ
    ンが転送ゲートに対して自己整列するように各転送ゲー
    トに対して少なくとも一つのドレインを含む電荷検知手
    段用の構造を形成し；ソースとドレインの第一の組を作
    るように第一の導電性型と逆の第二の導電性型をインプ
    ラントし；転送ゲートに隣接する少なくとも１つの画像
    検知領域をパターン化し；画像検知領域内に光ダイオー
    ドを作るために第二の導電性型の材料をインプラント
    し；光ダイオードの上に第一の導電性型からなるピン層
    をインプラントし；トランジスタの所定の組に対するソ
    ースとドレインの第二の組を表すパターンを作り；ソー
    スとドレインの第二の組を作るために第一の導電性型を
    インプラントし；ソースドレインの第一及び第二に組上
    に所定の接点の組を作る各段階からなる方法。
JP8088326A 1995-04-13 1996-04-10 ピン光ダイオード集積能動画素センサー Pending JPH08335688A (ja)

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US08/421,173 US5625210A (en) 1995-04-13 1995-04-13 Active pixel sensor integrated with a pinned photodiode
US421173 1995-04-13

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