JPH0715949B2 - Ｄｒａｍセル及びその製造方法 - Google Patents

Ｄｒａｍセル及びその製造方法

Info

Publication number
JPH0715949B2
JPH0715949B2 JP1221888A JP22188889A JPH0715949B2 JP H0715949 B2 JPH0715949 B2 JP H0715949B2 JP 1221888 A JP1221888 A JP 1221888A JP 22188889 A JP22188889 A JP 22188889A JP H0715949 B2 JPH0715949 B2 JP H0715949B2
Authority
JP
Japan
Prior art keywords
film
trench
oxide film
conductivity type
polycrystalline silicon
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
JP1221888A
Other languages
English (en)
Japanese (ja)
Other versions
JPH02312270A (ja
Inventor
ジョン ジュン―ヨン
Original Assignee
サムサン エレクトロニクス シーオー．，エルティーディー．
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by サムサン エレクトロニクス シーオー．，エルティーディー． filed Critical サムサン エレクトロニクス シーオー．，エルティーディー．
Publication of JPH02312270A publication Critical patent/JPH02312270A/ja
Publication of JPH0715949B2 publication Critical patent/JPH0715949B2/ja
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B12/00—Dynamic random access memory [DRAM] devices
    • H10B12/30—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells
    • H10B12/37—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells the capacitor being at least partially in a trench in the substrate
    • H10B12/377—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells the capacitor being at least partially in a trench in the substrate having a storage electrode extension located over the transistor
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B12/00—Dynamic random access memory [DRAM] devices
    • H10B12/30—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells
    • H10B12/37—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells the capacitor being at least partially in a trench in the substrate
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B12/00—Dynamic random access memory [DRAM] devices
    • H10B12/01—Manufacture or treatment
    • H10B12/02—Manufacture or treatment for one transistor one-capacitor [1T-1C] memory cells
    • H10B12/03—Making the capacitor or connections thereto
    • H10B12/038—Making the capacitor or connections thereto the capacitor being in a trench in the substrate

Landscapes

  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Semiconductor Memories (AREA)
  • Semiconductor Integrated Circuits (AREA)
JP1221888A 1989-05-19 1989-08-30 Ｄｒａｍセル及びその製造方法 Expired - Fee Related JPH0715949B2 (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
KR89-6720 1989-05-19
KR1019890006720A KR920010695B1 (ko) 1989-05-19 1989-05-19 디램셀 및 그 제조방법

Publications (2)

Publication Number Publication Date
JPH02312270A JPH02312270A (ja) 1990-12-27
JPH0715949B2 true JPH0715949B2 (ja) 1995-02-22

Family

ID=19286319

Family Applications (1)

Application Number Title Priority Date Filing Date
JP1221888A Expired - Fee Related JPH0715949B2 (ja) 1989-05-19 1989-08-30 Ｄｒａｍセル及びその製造方法

Country Status (5)

Country Link
JP (1) JPH0715949B2 (en))
KR (1) KR920010695B1 (en))
DE (1) DE3927176A1 (en))
FR (1) FR2647267B1 (en))
GB (1) GB2231718B (en))

Families Citing this family (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5185284A (en) * 1989-05-22 1993-02-09 Mitsubishi Denki Kabushiki Kaisha Method of making a semiconductor memory device
KR910013554A (ko) * 1989-12-08 1991-08-08 김광호 반도체 장치 및 그 제조방법
JPH03200366A (ja) * 1989-12-27 1991-09-02 Nec Corp 半導体装置及びその製造方法
JPH03278573A (ja) * 1990-03-28 1991-12-10 Mitsubishi Electric Corp 半導体記憶装置
KR930007194B1 (ko) * 1990-08-14 1993-07-31 삼성전자 주식회사 반도체 장치 및 그 제조방법
JP2748050B2 (ja) * 1991-02-08 1998-05-06 三菱電機株式会社 半導体装置およびその製造方法
US5272103A (en) * 1991-02-08 1993-12-21 Mitsubishi Denki Kabushiki Kaisha DRAM having a large dielectric breakdown voltage between an adjacent conductive layer and a capacitor electrode and method of manufacture thereof
US5208177A (en) * 1992-02-07 1993-05-04 Micron Technology, Inc. Local field enhancement for better programmability of antifuse PROM
JPH11145414A (ja) * 1997-09-04 1999-05-28 Toshiba Corp 半導体装置
KR100689514B1 (ko) * 2006-01-23 2007-03-02 주식회사 하이닉스반도체 반도체 소자 및 그의 제조 방법
CN112750899B (zh) * 2019-10-31 2022-05-27 广东美的白色家电技术创新中心有限公司 一种半导体器件及其制备方法、电器设备

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS58137245A (ja) * 1982-02-10 1983-08-15 Hitachi Ltd 大規模半導体メモリ
EP0169938B1 (en) * 1983-12-15 1989-03-29 Kabushiki Kaisha Toshiba Semiconductor memory device having trenched capacitor
JPS60189964A (ja) * 1984-03-12 1985-09-27 Hitachi Ltd 半導体メモリ
JPS62120070A (ja) * 1985-11-20 1987-06-01 Toshiba Corp 半導体記憶装置
JPS63122261A (ja) * 1986-11-12 1988-05-26 Mitsubishi Electric Corp 半導体装置の製造方法
JPH01119053A (ja) * 1987-10-31 1989-05-11 Sony Corp 半導体メモリ装置
JP2548957B2 (ja) * 1987-11-05 1996-10-30 富士通株式会社 半導体記憶装置の製造方法

Also Published As

Publication number Publication date
GB2231718A (en) 1990-11-21
KR920010695B1 (ko) 1992-12-12
FR2647267B1 (fr) 1995-03-10
KR900019141A (ko) 1990-12-24
DE3927176A1 (de) 1990-11-22
FR2647267A1 (fr) 1990-11-23
DE3927176C2 (en)) 1992-03-26
GB2231718B (en) 1993-05-26
GB8926627D0 (en) 1990-01-17
JPH02312270A (ja) 1990-12-27

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