JPH0582069B2 - - Google Patents

Info

Publication number
JPH0582069B2
JPH0582069B2 JP58015748A JP1574883A JPH0582069B2 JP H0582069 B2 JPH0582069 B2 JP H0582069B2 JP 58015748 A JP58015748 A JP 58015748A JP 1574883 A JP1574883 A JP 1574883A JP H0582069 B2 JPH0582069 B2 JP H0582069B2
Authority
JP
Japan
Prior art keywords
film
tft
insulating film
semiconductor layer
gate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP58015748A
Other languages
English (en)
Japanese (ja)
Other versions
JPS59141271A (ja
Inventor
Makoto Takeda
Tadanori Hishida
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sharp Corp
Original Assignee
Sharp Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sharp Corp filed Critical Sharp Corp
Priority to JP58015748A priority Critical patent/JPS59141271A/ja
Priority to GB08305371A priority patent/GB2118774B/en
Priority to AU31862/84A priority patent/AU549564B2/en
Publication of JPS59141271A publication Critical patent/JPS59141271A/ja
Priority to AU33519/84A priority patent/AU568148B2/en
Priority to US07/968,453 priority patent/US5340999A/en
Publication of JPH0582069B2 publication Critical patent/JPH0582069B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6729—Thin-film transistors [TFT] characterised by the electrodes
    • H10D30/6737—Thin-film transistors [TFT] characterised by the electrodes characterised by the electrode materials
    • H10D30/6739—Conductor-insulator-semiconductor electrodes

Landscapes

  • Liquid Crystal (AREA)
JP58015748A 1982-02-25 1983-01-31 薄膜トランジスタ Granted JPS59141271A (ja)

Priority Applications (5)

Application Number Priority Date Filing Date Title
JP58015748A JPS59141271A (ja) 1983-01-31 1983-01-31 薄膜トランジスタ
GB08305371A GB2118774B (en) 1982-02-25 1983-02-25 Insulated gate thin film transistor
AU31862/84A AU549564B2 (en) 1983-01-31 1984-08-13 Photo electric transducer
AU33519/84A AU568148B2 (en) 1983-01-31 1984-09-26 Woven slide fastener
US07/968,453 US5340999A (en) 1982-02-25 1992-10-29 Insulated gate thin film transistor with amorphous or microcrystalline semiconductor film

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP58015748A JPS59141271A (ja) 1983-01-31 1983-01-31 薄膜トランジスタ

Related Child Applications (1)

Application Number Title Priority Date Filing Date
JP21056092A Division JPH0691256B2 (ja) 1992-08-07 1992-08-07 薄膜トランジスタ

Publications (2)

Publication Number Publication Date
JPS59141271A JPS59141271A (ja) 1984-08-13
JPH0582069B2 true JPH0582069B2 (enrdf_load_stackoverflow) 1993-11-17

Family

ID=11897382

Family Applications (1)

Application Number Title Priority Date Filing Date
JP58015748A Granted JPS59141271A (ja) 1982-02-25 1983-01-31 薄膜トランジスタ

Country Status (2)

Country Link
JP (1) JPS59141271A (enrdf_load_stackoverflow)
AU (2) AU549564B2 (enrdf_load_stackoverflow)

Families Citing this family (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61214476A (ja) * 1985-03-19 1986-09-24 Agency Of Ind Science & Technol 薄膜トランジスタ
JPS62156375A (ja) * 1985-12-27 1987-07-11 小牧　貢 防染模様を有する生地
JPH0691258B2 (ja) * 1986-03-31 1994-11-14 セイコー電子工業株式会社 薄膜トランジスタ
JPS63265286A (ja) * 1987-04-23 1988-11-01 セイコーエプソン株式会社 アクテイブマトリクス液晶パネル
JPH061314B2 (ja) * 1987-07-30 1994-01-05 シャープ株式会社 薄膜トランジスタアレイ
JP2613403B2 (ja) * 1987-11-13 1997-05-28 日本電信電話株式会社 薄膜トランジスタの製造方法
JPH01231025A (ja) * 1988-03-11 1989-09-14 Seikosha Co Ltd 薄膜トランジスタアレイ
US5210050A (en) 1990-10-15 1993-05-11 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing a semiconductor device comprising a semiconductor film
JP2594384B2 (ja) * 1990-11-16 1997-03-26 松下電器産業株式会社 金属酸化物薄膜及びその製造方法並びにその金属酸化物薄膜を用いた電子装置
US7154147B1 (en) 1990-11-26 2006-12-26 Semiconductor Energy Laboratory Co., Ltd. Electro-optical device and driving method for the same
EP0499979A3 (en) 1991-02-16 1993-06-09 Semiconductor Energy Laboratory Co., Ltd. Electro-optical device
JPH05129608A (ja) * 1991-10-31 1993-05-25 Sharp Corp 半導体装置
JPH0595002A (ja) * 1991-10-02 1993-04-16 Sharp Corp 薄膜トランジスタ
US5796116A (en) 1994-07-27 1998-08-18 Sharp Kabushiki Kaisha Thin-film semiconductor device including a semiconductor film with high field-effect mobility
AUPN679295A0 (en) * 1995-11-23 1995-12-14 Unisearch Limited Conformal films for light-trapping in thin silicon solar cells

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
NL7002049A (enrdf_load_stackoverflow) * 1969-03-21 1970-09-23
JPS5669864A (en) * 1979-11-09 1981-06-11 Japan Electronic Ind Dev Assoc<Jeida> Thin-film transistor
JPS57153427A (en) * 1981-03-17 1982-09-22 Fujitsu Ltd Manufacture of thin film device

Also Published As

Publication number Publication date
AU3186284A (en) 1985-03-21
AU549564B2 (en) 1986-01-30
JPS59141271A (ja) 1984-08-13
AU3351984A (en) 1985-04-18
AU568148B2 (en) 1987-12-17

Similar Documents

Publication Publication Date Title
US5340999A (en) Insulated gate thin film transistor with amorphous or microcrystalline semiconductor film
JPS58147069A (ja) 薄膜トランジスタ
JPH0582069B2 (enrdf_load_stackoverflow)
US20080210934A1 (en) Semiconductor Device Using Titanium Dioxide as Active Layer and Method for Producing Semiconductor Device
US5821560A (en) Thin film transistor for controlling a device such as a liquid crystal cell or electroluminescent element
GB2087147A (en) Methods of manufacturing semiconductor devices
JPH03217059A (ja) 薄膜トランジスタ
KR100575092B1 (ko) 게이트 절연막의 형성 방법
JPH0697444A (ja) 薄膜トランジスタ
JPS6146068B2 (enrdf_load_stackoverflow)
JPS60177676A (ja) 薄膜トランジスタ素子およびその製造方法
JPS62141776A (ja) 薄膜トランジスタ
JPH06260644A (ja) 半導体装置の製造方法
JPH03185840A (ja) 薄膜トランジスタ
JPH0691255B2 (ja) 薄膜トランジスタ
JPS62122171A (ja) 薄膜トランジスタ
JPS58148458A (ja) 薄膜トランジスタ
JP2523536B2 (ja) 薄膜トランジスタの製造方法
JPS59193062A (ja) 多結晶シリコン薄膜トランジスタ
JPH01114080A (ja) 薄膜トランジスタ
JPH0828512B2 (ja) 薄膜トランジスタ
JPH0348670B2 (enrdf_load_stackoverflow)
JPH06177382A (ja) 薄膜トランジスタとそれを用いた液晶ディスプレイパネル
JPS5914673A (ja) 薄膜トランジスタの製造方法
KR100449248B1 (ko) 원자층 증착을 이용한 커패시터 형성 방법