AU549564B2 - Photo electric transducer - Google Patents

Photo electric transducer

Info

Publication number
AU549564B2
AU549564B2 AU31862/84A AU3186284A AU549564B2 AU 549564 B2 AU549564 B2 AU 549564B2 AU 31862/84 A AU31862/84 A AU 31862/84A AU 3186284 A AU3186284 A AU 3186284A AU 549564 B2 AU549564 B2 AU 549564B2
Authority
AU
Australia
Prior art keywords
electric transducer
photo electric
photo
transducer
electric
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
AU31862/84A
Other languages
English (en)
Other versions
AU3186284A (en
Inventor
Not Given Name
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
National Institute of Advanced Industrial Science and Technology AIST
Taiyo Yuden Co Ltd
Original Assignee
Agency of Industrial Science and Technology
Taiyo Yuden Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Agency of Industrial Science and Technology, Taiyo Yuden Co Ltd filed Critical Agency of Industrial Science and Technology
Publication of AU3186284A publication Critical patent/AU3186284A/en
Application granted granted Critical
Publication of AU549564B2 publication Critical patent/AU549564B2/en
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6729—Thin-film transistors [TFT] characterised by the electrodes
    • H10D30/6737—Thin-film transistors [TFT] characterised by the electrodes characterised by the electrode materials
    • H10D30/6739—Conductor-insulator-semiconductor electrodes
AU31862/84A 1983-01-31 1984-08-13 Photo electric transducer Ceased AU549564B2 (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP58015748A JPS59141271A (ja) 1983-01-31 1983-01-31 薄膜トランジスタ
JP58-157489 1983-08-29

Publications (2)

Publication Number Publication Date
AU3186284A AU3186284A (en) 1985-03-21
AU549564B2 true AU549564B2 (en) 1986-01-30

Family

ID=11897382

Family Applications (2)

Application Number Title Priority Date Filing Date
AU31862/84A Ceased AU549564B2 (en) 1983-01-31 1984-08-13 Photo electric transducer
AU33519/84A Expired AU568148B2 (en) 1983-01-31 1984-09-26 Woven slide fastener

Family Applications After (1)

Application Number Title Priority Date Filing Date
AU33519/84A Expired AU568148B2 (en) 1983-01-31 1984-09-26 Woven slide fastener

Country Status (2)

Country Link
JP (1) JPS59141271A (enrdf_load_stackoverflow)
AU (2) AU549564B2 (enrdf_load_stackoverflow)

Families Citing this family (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61214476A (ja) * 1985-03-19 1986-09-24 Agency Of Ind Science & Technol 薄膜トランジスタ
JPS62156375A (ja) * 1985-12-27 1987-07-11 小牧　貢 防染模様を有する生地
JPH0691258B2 (ja) * 1986-03-31 1994-11-14 セイコー電子工業株式会社 薄膜トランジスタ
JPS63265286A (ja) * 1987-04-23 1988-11-01 セイコーエプソン株式会社 アクテイブマトリクス液晶パネル
JPH061314B2 (ja) * 1987-07-30 1994-01-05 シャープ株式会社 薄膜トランジスタアレイ
JP2613403B2 (ja) * 1987-11-13 1997-05-28 日本電信電話株式会社 薄膜トランジスタの製造方法
JPH01231025A (ja) * 1988-03-11 1989-09-14 Seikosha Co Ltd 薄膜トランジスタアレイ
US5210050A (en) 1990-10-15 1993-05-11 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing a semiconductor device comprising a semiconductor film
JP2594384B2 (ja) * 1990-11-16 1997-03-26 松下電器産業株式会社 金属酸化物薄膜及びその製造方法並びにその金属酸化物薄膜を用いた電子装置
US7154147B1 (en) 1990-11-26 2006-12-26 Semiconductor Energy Laboratory Co., Ltd. Electro-optical device and driving method for the same
EP0499979A3 (en) 1991-02-16 1993-06-09 Semiconductor Energy Laboratory Co., Ltd. Electro-optical device
JPH05129608A (ja) * 1991-10-31 1993-05-25 Sharp Corp 半導体装置
JPH0595002A (ja) * 1991-10-02 1993-04-16 Sharp Corp 薄膜トランジスタ
US5796116A (en) 1994-07-27 1998-08-18 Sharp Kabushiki Kaisha Thin-film semiconductor device including a semiconductor film with high field-effect mobility
AUPN679295A0 (en) * 1995-11-23 1995-12-14 Unisearch Limited Conformal films for light-trapping in thin silicon solar cells

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
NL7002049A (enrdf_load_stackoverflow) * 1969-03-21 1970-09-23
JPS5669864A (en) * 1979-11-09 1981-06-11 Japan Electronic Ind Dev Assoc<Jeida> Thin-film transistor
JPS57153427A (en) * 1981-03-17 1982-09-22 Fujitsu Ltd Manufacture of thin film device

Also Published As

Publication number Publication date
AU3186284A (en) 1985-03-21
JPH0582069B2 (enrdf_load_stackoverflow) 1993-11-17
JPS59141271A (ja) 1984-08-13
AU3351984A (en) 1985-04-18
AU568148B2 (en) 1987-12-17

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