JPH0554699B2 - - Google Patents

Info

Publication number
JPH0554699B2
JPH0554699B2 JP59178646A JP17864684A JPH0554699B2 JP H0554699 B2 JPH0554699 B2 JP H0554699B2 JP 59178646 A JP59178646 A JP 59178646A JP 17864684 A JP17864684 A JP 17864684A JP H0554699 B2 JPH0554699 B2 JP H0554699B2
Authority
JP
Japan
Prior art keywords
groove
main surface
region
semiconductor device
capacitive element
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP59178646A
Other languages
English (en)
Japanese (ja)
Other versions
JPS6156446A (ja
Inventor
Masaaki Kinugawa
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Tokyo Shibaura Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Tokyo Shibaura Electric Co Ltd filed Critical Tokyo Shibaura Electric Co Ltd
Priority to JP59178646A priority Critical patent/JPS6156446A/ja
Priority to KR1019850005538A priority patent/KR900008386B1/ko
Priority to DE19853530773 priority patent/DE3530773A1/de
Publication of JPS6156446A publication Critical patent/JPS6156446A/ja
Priority to US07/285,395 priority patent/US4971926A/en
Publication of JPH0554699B2 publication Critical patent/JPH0554699B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B12/00—Dynamic random access memory [DRAM] devices
    • H10B12/30—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells
    • H10B12/37—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells the capacitor being at least partially in a trench in the substrate
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D1/00—Resistors, capacitors or inductors
    • H10D1/60—Capacitors
    • H10D1/62—Capacitors having potential barriers
    • H10D1/66—Conductor-insulator-semiconductor capacitors, e.g. MOS capacitors
    • H10D1/665—Trench conductor-insulator-semiconductor capacitors, e.g. trench MOS capacitors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/40—Crystalline structures
    • H10D62/405—Orientations of crystalline planes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/80—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs
    • H10D84/811—Combinations of field-effect devices and one or more diodes, capacitors or resistors
    • H10W10/0148—
    • H10W10/17—
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S438/00—Semiconductor device manufacturing: process
    • Y10S438/973—Substrate orientation

Landscapes

  • Semiconductor Integrated Circuits (AREA)
  • Semiconductor Memories (AREA)
  • Element Separation (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
JP59178646A 1984-08-28 1984-08-28 半導体装置およびその製造方法 Granted JPS6156446A (ja)

Priority Applications (4)

Application Number Priority Date Filing Date Title
JP59178646A JPS6156446A (ja) 1984-08-28 1984-08-28 半導体装置およびその製造方法
KR1019850005538A KR900008386B1 (ko) 1984-08-28 1985-07-31 반도체기판의 주표면에 凹형 도랑이 형성된 반도체장치 및 그 제조방법
DE19853530773 DE3530773A1 (de) 1984-08-28 1985-08-28 Halbleitervorrichtung und verfahren zu ihrer herstellung
US07/285,395 US4971926A (en) 1984-08-28 1988-12-16 Method of manufacturing a semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP59178646A JPS6156446A (ja) 1984-08-28 1984-08-28 半導体装置およびその製造方法

Publications (2)

Publication Number Publication Date
JPS6156446A JPS6156446A (ja) 1986-03-22
JPH0554699B2 true JPH0554699B2 (index.php) 1993-08-13

Family

ID=16052099

Family Applications (1)

Application Number Title Priority Date Filing Date
JP59178646A Granted JPS6156446A (ja) 1984-08-28 1984-08-28 半導体装置およびその製造方法

Country Status (4)

Country Link
US (1) US4971926A (index.php)
JP (1) JPS6156446A (index.php)
KR (1) KR900008386B1 (index.php)
DE (1) DE3530773A1 (index.php)

Families Citing this family (25)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61135151A (ja) * 1984-12-05 1986-06-23 Mitsubishi Electric Corp 半導体記憶装置
JPS62293758A (ja) * 1986-06-13 1987-12-21 Matsushita Electric Ind Co Ltd 半導体装置およびその製造方法
JPH0362568A (ja) * 1989-07-31 1991-03-18 Hitachi Ltd 半導体装置の製造方法
JPH05109984A (ja) * 1991-05-27 1993-04-30 Mitsubishi Electric Corp 半導体装置およびその製造方法
US5539238A (en) * 1992-09-02 1996-07-23 Texas Instruments Incorporated Area efficient high voltage Mosfets with vertical resurf drift regions
US5451809A (en) * 1994-09-07 1995-09-19 Kabushiki Kaisha Toshiba Smooth surface doped silicon film formation
US5714775A (en) * 1995-04-20 1998-02-03 Kabushiki Kaisha Toshiba Power semiconductor device
US5729045A (en) * 1996-04-02 1998-03-17 Advanced Micro Devices, Inc. Field effect transistor with higher mobility
DE19807776A1 (de) * 1998-02-24 1999-09-02 Siemens Ag Halbleitervorrichtung und entsprechendes Herstellungsverfahren
JP2002520815A (ja) * 1998-07-02 2002-07-09 インフィネオン テクノロジース アクチエンゲゼルシャフト 欠陥の減少したｐ−ｎ接合部を有する集積回路装置
JP2000174148A (ja) 1998-12-09 2000-06-23 Mitsubishi Electric Corp 不揮発性半導体記憶装置およびその製造方法
US6426254B2 (en) 1999-06-09 2002-07-30 Infineon Technologies Ag Method for expanding trenches by an anisotropic wet etch
US6320215B1 (en) 1999-07-22 2001-11-20 International Business Machines Corporation Crystal-axis-aligned vertical side wall device
US6362040B1 (en) * 2000-02-09 2002-03-26 Infineon Technologies Ag Reduction of orientation dependent oxidation for vertical sidewalls of semiconductor substrates
US20050090047A1 (en) * 2000-12-20 2005-04-28 Actel Corporation, A California Corporation. Method of making a MOS transistor having improved total radiation-induced leakage current
US20050090073A1 (en) * 2000-12-20 2005-04-28 Actel Corporation, A California Corporation MOS transistor having improved total radiation-induced leakage current
TW499729B (en) * 2001-03-16 2002-08-21 Nanya Technology Corp Method of improving uniformity of oxide layer around trench sidewall and manufacture method of deep trench capacitor
DE10255866B4 (de) * 2002-11-29 2006-11-23 Infineon Technologies Ag Verfahren und Strukturen zur Erhöhung der Strukturdichte und der Speicherkapazität in einem Halbleiterwafer
CN1610117A (zh) * 2003-10-17 2005-04-27 松下电器产业株式会社 半导体装置及其制造方法
DE102004040047B3 (de) * 2004-08-18 2006-02-16 Infineon Technologies Ag Herstellungsverfahren für einen Kondensator
JP2006222379A (ja) * 2005-02-14 2006-08-24 Fuji Film Microdevices Co Ltd 半導体装置およびその製造方法
US8685828B2 (en) 2011-01-14 2014-04-01 Infineon Technologies Ag Method of forming a capacitor
US8318575B2 (en) 2011-02-07 2012-11-27 Infineon Technologies Ag Compressive polycrystalline silicon film and method of manufacture thereof
JP2014165372A (ja) * 2013-02-26 2014-09-08 Toshiba Corp 不揮発性半導体記憶装置
CN103426828A (zh) * 2013-07-12 2013-12-04 上海新储集成电路有限公司 一种基于绝缘体上硅材料的双极型高压cmos单多晶硅填充深沟道器件隔离工艺

Family Cites Families (19)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3785886A (en) * 1971-02-22 1974-01-15 Ibm Semiconductor device fabrication utilizing <100> oriented substrate material
US3965453A (en) * 1974-12-27 1976-06-22 Bell Telephone Laboratories, Incorporated Piezoresistor effects in semiconductor resistors
US3998674A (en) * 1975-11-24 1976-12-21 International Business Machines Corporation Method for forming recessed regions of thermally oxidized silicon and structures thereof utilizing anisotropic etching
US4278987A (en) * 1977-10-17 1981-07-14 Hitachi, Ltd. Junction isolated IC with thick EPI portion having sides at least 20 degrees from (110) orientations
US4131496A (en) * 1977-12-15 1978-12-26 Rca Corp. Method of making silicon on sapphire field effect transistors with specifically aligned gates
JPS5559753A (en) * 1978-10-27 1980-05-06 Hitachi Ltd Semiconductor device
DE2949360A1 (de) * 1978-12-08 1980-06-26 Hitachi Ltd Verfahren zur herstellung einer oxidierten isolation fuer integrierte schaltungen
JPS5681968A (en) * 1979-12-07 1981-07-04 Toshiba Corp Manufacture of semiconductor device
JPS58137245A (ja) * 1982-02-10 1983-08-15 Hitachi Ltd 大規模半導体メモリ
US4577208A (en) * 1982-09-23 1986-03-18 Eaton Corporation Bidirectional power FET with integral avalanche protection
JPS5961045A (ja) * 1982-09-29 1984-04-07 Fujitsu Ltd 半導体装置の製造方法
JPS6039862A (ja) * 1983-08-12 1985-03-01 Nippon Telegr & Teleph Corp <Ntt> 半導体記憶装置およびその製造方法
JPS6049633A (ja) * 1983-08-26 1985-03-18 Hitachi Cable Ltd 半導体装置
EP0243609A1 (en) * 1986-04-30 1987-11-04 International Business Machines Corporation Complementary semiconductor device structure and its production
JPS639964A (ja) * 1986-06-30 1988-01-16 Nec Corp 半導体記憶素子製造法
JPS6380561A (ja) * 1986-09-24 1988-04-11 Nec Corp 相補型半導体装置の製造方法
JPS6380562A (ja) * 1986-09-24 1988-04-11 Nec Corp 相補型半導体装置
JPS63148675A (ja) * 1986-12-12 1988-06-21 Toshiba Corp 半導体装置
JPS63197365A (ja) * 1987-02-12 1988-08-16 Matsushita Electric Ind Co Ltd 半導体装置の製造方法

Also Published As

Publication number Publication date
JPS6156446A (ja) 1986-03-22
KR900008386B1 (ko) 1990-11-17
US4971926A (en) 1990-11-20
KR860002135A (ko) 1986-03-26
DE3530773A1 (de) 1986-03-06
DE3530773C2 (index.php) 1993-09-16

Similar Documents

Publication Publication Date Title
JPH0554699B2 (index.php)
KR0163759B1 (ko) 반도체장치 및 반도체기억장치
US4646118A (en) Semiconductor memory device
EP0190928A2 (en) Integrated MOS transistor and method of manufacturing it
JPH0685431B2 (ja) 半導体装置
JPH02166762A (ja) コンパクトｃｍｏｓデバイス及びその製造方法
JP3272979B2 (ja) 半導体装置
JPH0648719B2 (ja) 半導体記憶装置
JPS6145390B2 (index.php)
JPH0740593B2 (ja) Ｄｒａｍセルおよびその製作方法
JP4290921B2 (ja) 半導体集積回路装置
JPS6155258B2 (index.php)
JPS63281457A (ja) 半導体メモリ
JPH03268462A (ja) メモリセルを作成する方法
JPH02246264A (ja) 半導体装置およびその製造方法
JPH0347588B2 (index.php)
JPS6340362A (ja) 半導体記憶装置
KR960015525B1 (ko) 반도체 소자의 제조방법
KR100855862B1 (ko) 에스렘(ｓｒａｍ) 셀 및 그의 제조방법
JPH1174475A (ja) 半導体集積回路装置およびその製造方法
JPH0329186B2 (index.php)
JPS6240765A (ja) 読み出し専用半導体記憶装置およびその製造方法
JPH07106436A (ja) 半導体メモリ装置及びその製造方法
JPS5838939B2 (ja) 集積回路
JPH1050950A (ja) 半導体集積回路装置の製造方法

Legal Events

Date Code Title Description
EXPY Cancellation because of completion of term